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    • 13. 发明申请
    • THERMAL HEAD AND METHOD OF CONTROLLING THERMAL HEAD
    • 热头和控制热头的方法
    • US20080117275A1
    • 2008-05-22
    • US11942472
    • 2007-11-19
    • Hiroe HonmaTakaaki Murakami
    • Hiroe HonmaTakaaki Murakami
    • B41J2/355
    • B41J2/355
    • A thermal head has plural heat generating elements arrayed therein in a main scanning direction to form a heat generating element row, causes the respective heat generating elements to generate heat while conveying a recording medium in a sub-scanning direction, and forms plural dot lines in the main scanning direction on the recording medium to record an image. A plurality of the heat generating element rows are arrayed in the sub-scanning direction. Respective nth (n is a natural number) heat generating elements among the heat generating elements in the respective heat generating element rows can sharingly form a dot in the same position in an identical dot line according to independent driving for each of the heat generating element rows.
    • 热敏头具有沿主扫描方向排列在其中的多个发热元件,以形成发热元件排,使得各个发热元件在沿副扫描方向输送记录介质时产生热量,并且形成多个点线 记录介质上的主扫描方向记录图像。 多个发热元件列沿副扫描方向排列。 各发热元件行中的发热元件之间的第n(n是自然数)的发热元件可以根据每个发热元件列的独立驱动在相同的点线中共同形成点在相同的位置 。
    • 19. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US06342418B1
    • 2002-01-29
    • US09233210
    • 1999-01-20
    • Takaaki MurakamiKenji Yasumura
    • Takaaki MurakamiKenji Yasumura
    • H01L218242
    • H01L27/105H01L27/10808
    • An impurity concentration profile that improves pn junction breakdown voltage and mitigates the electric field, and that does not adversely affect the characteristics of a field effect transistor is realized. An n type source/drain region is formed at a silicon substrate. A p type impurity concentration profile. includes respective peak concentrations at a dope region for forming a p type well, a p type channel cut region, and a p type channel dope region. An impurity concentration profile of the n type source/drain region crosses the p type impurity concentration profile at a low concentration, and includes phosphorus implantation regions indicating impurity concentrations respectively higher than those of the p type channel cut region and the p type channel dope region and respective peaks in impurity concentration at the neighborhood of respective depth thereof. The impurity concentration profile of the n type source/drain region has a minimum point or inflection point at the region between the impurity concentration peaks of the phosphorus implantation regions.
    • 实现了改善pn结击穿电压并减轻电场并且不会不利地影响场效应晶体管的特性的杂质浓度分布。 在硅衬底上形成n型源/漏区。 p型杂质浓度分布图。 包括用于形成p型阱的掺杂区域,p型沟道切割区域和p型沟道掺杂区域中的各自的峰值浓度。 n型源极/漏极区的杂质浓度分布在低浓度下与p型杂质浓度分布相交,并且包括表示杂质浓度分别高于p型沟道切割区域和p型沟道掺杂区域的磷注入区域 以及其各自深度附近的杂质浓度的各峰。 n型源/漏区的杂质浓度分布在磷注入区的杂质浓度峰之间的区域具有最小点或拐点。