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11. 发明申请

US20070110115A1 SURFACE EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件
公开(公告)号：US20070110115A1
公开(公告)日：2007-05-17
申请号：US11554973
申请日：2006-10-31
申请人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0014 , H01S5/0425 , H01S5/18388 , H01S5/423 , H01S2301/176
摘要： A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54. A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.
摘要翻译： VCSEL器件包括在周边区域54中的半导体层结构的表面上具有较大厚度（d 1）的聚酰亚胺，该外围区域54通过环形槽52与介质隔离。与周边区域54的顶表面相比，中央台面30的上表面位于较低的位置。获得一种结构，其中在测试或组装中处理该装置期间，介质板不被夹具或探针接触。

12. 发明申请

US20110003403A1 TESTING METHOD OF SURFACE-EMITTING LASER DEVICE AND TESTING DEVICE THEREOF 有权
标题翻译：表面发射激光器件的测试方法及其测试装置
公开(公告)号：US20110003403A1
公开(公告)日：2011-01-06
申请号：US12796225
申请日：2010-06-08
申请人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
发明人： Koji HIRAIWA , Takeo Kageyama , Norihiro Iwai , Keishi Takaki
IPC分类号： H01L21/66 , G01J1/00 , G01N21/01
CPC分类号： G01J1/4228 , G01J2001/4247 , H01S5/0021 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/423
摘要： A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
摘要翻译：对形成在晶片上的多个表面发射激光器件执行晶片级老化测试的方法包括：使与多个表面发射激光器件相同的平面上布置的多个接触电极相同，彼此电连接以分别与表面发射激光器件的焊盘电极接触，并且向表面发射激光器件和接触电极的第二电极施加电流。在以预定温度加热晶片的同时进行晶片级老化测试。在晶片级老化测试期间，监测从表面发射激光器件发射的激光。

13. 发明授权

US08488644B2 Semiconductor laser element and manufacturing method thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08488644B2
公开(公告)日：2013-07-16
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

14. 发明申请

US20110261852A1 SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110261852A1
公开(公告)日：2011-10-27
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/10 , H01L33/20 , B82Y20/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

15. 发明申请

US20110274131A1 TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE 审中-公开
标题翻译：二维表面发射激光阵列元件，表面发射激光器件和光源
公开(公告)号：US20110274131A1
公开(公告)日：2011-11-10
申请号：US13142996
申请日：2010-01-20
申请人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
发明人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
IPC分类号： H01S5/42
CPC分类号： H01S5/423 , H01S5/02284 , H01S5/0422 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2214 , H01S5/4018
摘要： Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same.
摘要翻译：包括多个表面发射激光器元件，每个表面发射激光器元件包括衬底; 形成在基板上并由高折射率层和低折射率层的周期性结构形成的下多层反射镜和上多层反射镜; 设置在所述下多层反射镜和所述上多层反射镜之间的有源层; 位于有源层和下多层反射镜之间的下接触层，并延伸到上多层反射镜的外周侧; 形成在下接触层延伸的部分的表面上的下电极; 以及用于向有源层注入电流的上电极，其中所述表面发射激光元件彼此串联电连接以形成串联连接的元件阵列。这允许提供能够以简单结构实现高能量转换效率且能够高集成度的二维表面发射激光器阵列元件，以及使用该二维表面发射激光器阵列元件的光源。

16. 发明申请

US20070030874A1 Surface-emitting laser element and laser module using the same 审中-公开
标题翻译：表面发射激光元件和使用其的激光模块
公开(公告)号：US20070030874A1
公开(公告)日：2007-02-08
申请号：US11515017
申请日：2006-09-05
申请人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
发明人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
IPC分类号： H01S3/13 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/1221 , H01S5/18311 , H01S5/2213 , H01S5/2214 , H01S5/3054 , H01S5/3086 , H01S5/32366 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S2301/02
摘要： A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed an optical communication frequency for modulating a laser light output from the surface-emitting laser element.
摘要翻译：通过下多层反射镜和上多层反射镜形成空腔，并且在表面发射激光元件中的下多层反射镜和上多层反射镜之间布置有源层。空腔中的偏置点处的弛豫振荡频率被设定为超过用于调制从表面发射激光器元件输出的激光的光通信频率。

17. 发明授权

US08204093B2 Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array 有权
标题翻译：垂直腔表面发射激光器和垂直腔表面发射激光器阵列的制造方法
公开(公告)号：US08204093B2
公开(公告)日：2012-06-19
申请号：US12560860
申请日：2009-09-16
申请人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
发明人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
IPC分类号： H01S5/10 , H01S5/183
CPC分类号： H01S5/18341 , H01S5/0208 , H01S5/0425 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/2004 , H01S5/2214 , H01S5/3054
摘要： A method of manufacturing a surface emitting laser element of a vertical cavity type comprises sequential accumulation that accumulates a reflecting mirror of a multilayered film layer at a lower side of the substrate, and accumulates semiconductor layers onto the reflecting minor at the lower side that comprises an active layer and a contact layer. The process includes forming a first layer of dielectric substance on the contact layer, forming an electrode of an annular shape on the contact layer that has an open part to be arranged for the first layer at an inner side of the open part, and forming a second layer of dielectric substance to cover the first layer and a gap formed between the first layer and the electrode of the annular shape. The accumulated semiconductor layers are etched to form a mesa post, using the electrode of the annular shape as a mask.
摘要翻译：制造垂直腔型表面发射激光元件的方法包括在衬底的下侧积累多层膜层的反射镜的顺序累积，并将半导体层积聚在下侧的反射镜上，活性层和接触层。该方法包括在接触层上形成第一层介电物质，在接触层上形成环状的电极，该接触层在开口部分的内侧具有用于第一层的开放部分，并形成第二层介电物质以覆盖第一层，以及形成在第一层和环形形状的电极之间的间隙。使用环形的电极作为掩模，蚀刻累积的半导体层以形成台面柱。

18. 发明申请

US20110064108A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER AND VERTICAL-CAVITY SURFACE EMITTING LASER ARRAY 有权
标题翻译：制造垂直孔表面发射激光和垂直孔表面发射激光阵列的方法
公开(公告)号：US20110064108A1
公开(公告)日：2011-03-17
申请号：US12560860
申请日：2009-09-16
申请人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
发明人： Keishi Takaki , Norihiro Iwai , Koji Hiraiwa
IPC分类号： H01S5/183 , H01L21/30
CPC分类号： H01S5/18341 , H01S5/0208 , H01S5/0425 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/2004 , H01S5/2214 , H01S5/3054
摘要： A method of manufacturing a surface emitting laser element of a vertical cavity type in accordance with the present invention is characterized in that comprises the following steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor.
摘要翻译：根据本发明的制造垂直腔型表面发射激光元件的方法的特征在于包括以下步骤：在衬底上施加积聚过程，该过程顺序地包括累积多层反射镜其下侧的薄膜层在基板上，并且将多个半导体层的多个层叠在其下侧的多层膜层的反射镜上，其包括有源层，并且还包括接触层也在其顶层; 形成电介质的第一层作为在接触层的一部分区域形成电介质的第一层的工序; 形成环形电极，作为在接触层上形成环状的电极的工序，该电极在其中心处具有开口部分，以便在第一层电介质物质的位置设置内部开放部分在那里; 形成介电物质的第二层作为形成电介质的第二层的工序，以便覆盖介电物质的第一层并覆盖形成在第一层介电物质和环形电极; 并且作为在其上积聚的台面柱的形成过程蚀刻半导体层，从而利用环形的电极作为掩模来蚀刻成台面的形状。

19. 发明授权

US08270447B2 Semiconductor light emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08270447B2
公开(公告)日：2012-09-18
申请号：US12684109
申请日：2010-01-07
申请人： Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
发明人： Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01L2224/48091 , H01L2224/48137 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/0282 , H01S5/18313 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/32366 , H01S5/423 , H01L2924/00014
摘要： A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.
摘要翻译：一种半导体发光元件，包括：有源层; 向所述有源层注入电流的第一电极和第二电极; 在所述有源层和所述第一电极之间的半导体层; 以及设置在所述半导体层上并且来自所述有源层的光通过的电介质层; 其中所述第一电极设置在所述半导体层上，具有通过所述有源层的光通过的开口，并且包括与所述半导体层接触并设置在所述半导体层上的第一电极层和设置在所述半导体层上的第二电极层在第一电极层上，与第二电极层相比，第一电极层与半导体层的反应性较小; 并且介电层设置在开口内部，使得第一电极层的开口侧上的端部从半导体层的顶部延伸到电介质层的顶部。

20. 发明申请

US20090304036A1 VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND VERTICAL CAVITY SURFACE EMITTING LASER ARRAY 有权
标题翻译：垂直孔表面发射激光器件和垂直孔表面发射激光阵列
公开(公告)号：US20090304036A1
公开(公告)日：2009-12-10
申请号：US12388057
申请日：2009-02-18
申请人： Norihiro Iwai , Keishi Takaki , Suguru Imai
发明人： Norihiro Iwai , Keishi Takaki , Suguru Imai
IPC分类号： H01S5/183 , H01S5/34 , H01S5/42
CPC分类号： H01S5/18369 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/32366
摘要： In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semiconductor lower DBR mirror 12, a cladding layer 14, a n-type contact layer 16, an active layer 18, an electric current constricting layer 20, a p-type cladding layer 22, a p-type contact layer 24, a phase adjusting layer 36 and a dielectric upper DBR mirror 28. The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layer 20 and diameter Y (μm) of the phase adjusting layer satisfy the following relation:X+1.9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser).
摘要翻译：在表面发射激光器中，在保持单模特性的同时实现了低阈值电流和高功率输出。表面发射激光器包括形成在GaAs衬底10上的分层结构，包括：半导体下DBR反射镜12，包层14，n型接触层16，有源层18，电流限制层20， p型覆层22，p型接触层24，相位调整层36和电介质上DBR反射镜28.表面发射激光器应形成为使得表面发射激光的直径X（mum）前述的电流限制层20和相位调整层的直径Y（母）满足以下关系：X +1.9λλ= Y <= X +5.0λ（其中λ表示表面发射激光器的振荡波长（mum））。

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