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    • 18. 发明授权
    • Solid state image pickup device and manufacturing method therefor
    • 固态摄像装置及其制造方法
    • US07274394B2
    • 2007-09-25
    • US10622540
    • 2003-07-21
    • Toru KoizumiShigetoshi SugawaIsamu UenoTetsunobu KochiKatsuhito SakuraiHiroki Hiyama
    • Toru KoizumiShigetoshi SugawaIsamu UenoTetsunobu KochiKatsuhito SakuraiHiroki Hiyama
    • H04N3/14H01L21/336H01L31/062H01L27/00
    • H01L27/14806H01L27/14609H01L27/14643H01L27/14689H01L31/035281Y02E10/50
    • A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
    • 一种制造具有光电转换单元,转移MOS晶体管,设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法 包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤,以及通过离子注入形成第五半导体区域的第二步骤 使用栅电极作为掩模,以第二能量以第二角度的第二导电类型的杂质。 通过离子注入第二导电类型的杂质形成第四半导体区域。 第二能量小于第一能量,并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度,其中第二角度大于第一角度,并且执行第一和第三步骤 分别。