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11. 发明授权

US09142728B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09142728B2
公开(公告)日：2015-09-22
申请号：US14455540
申请日：2014-08-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Tsutomu Nakanishi , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/60 , H01L33/40 , H01L33/38 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

12. 发明申请

US20150162042A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：全能磁记录介质及其制造方法
公开(公告)号：US20150162042A1
公开(公告)日：2015-06-11
申请号：US14496648
申请日：2014-09-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kaori Kimura , Soichi Oikawa , Kazutaka Takizawa , Akira Fujimoto , Akihiko Takeo
IPC分类号： G11B5/66 , G11B5/851 , G11B5/84 , G11B5/64 , G11B5/65
CPC分类号： G11B5/8404 , G11B5/64 , G11B5/656 , G11B5/7325
摘要： According to one embodiment, a perpendicular magnetic recording medium includes a substrate, an underlayer formed on the substrate and a magnetic recording layer formed on the underlayer and having an easy axis in a direction perpendicular to a film surface. The underlayer includes a plurality of projecting portions arranged at a distance of 1 nm to 20 nm from one another. The magnetic recording layer is an amorphous magnetic recording layer including a plurality of magnetic grains each formed to expand towards a top end thereof from a surface of a respective projecting portion of the underlayer, at least those of the magnetic grains located on a respective projecting portion side being separated from each other.
摘要翻译：根据一个实施例，垂直磁记录介质包括衬底，形成在衬底上的底层和形成在底层上的磁记录层，并且在垂直于膜表面的方向上具有容易的轴。底层包括彼此间隔1nm至20nm的多个突出部分。磁记录层是包括多个磁性颗粒的非晶磁记录层，每个磁性颗粒形成为从底层的相应突出部分的表面向其顶端扩展，至少那些磁性颗粒位于相应的突出部分侧面彼此分离。

13. 发明授权

US11579180B2 Insulation diagnostic system and insulation diagnostic method 有权
公开(公告)号：US11579180B2
公开(公告)日：2023-02-14
申请号：US17646066
申请日：2021-12-27
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
发明人： Takashi Harakawa , Makoto Takanezawa , Akira Fujimoto , Satoshi Hiroshima , Kazunori Shioda
IPC分类号： G01R31/08 , G01R31/12 , G01R31/34
摘要： According to one embodiment, an insulation diagnostic system comprising: a peak-value acquisition circuit configured to acquire at least one peak value of a section corresponding to local discharge of a voltage signal acquired by at least one sensor that detects the voltage signal in a non-contact manner; a function acquisition circuit configured to acquire a calculation function for calculating charge amount related to the discharge based on at least two peak values acquired from the voltage signal that is detected by the sensor by applying a test voltage to a rotating electrical machine while the rotating electrical machine is stopped; and a charge-amount calculation circuit configured to calculate the charge amount related to partial discharge of the rotating electrical machine based on the calculation function and the peak value obtained from the voltage signal that is detected by the sensor during operation of the rotating electrical machine.

14. 发明申请

US20170117010A1 MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND REPRODUCTION DEVICE 有权
公开(公告)号：US20170117010A1
公开(公告)日：2017-04-27
申请号：US15007907
申请日：2016-01-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takeshi Iwasaki , Akira Fujimoto
IPC分类号： G11B5/73 , G11B5/84 , G11B5/851 , G11B5/667
CPC分类号： G11B5/732 , G11B5/667 , G11B5/7315 , G11B5/7325 , G11B5/8404 , G11B5/8408 , G11B5/851
摘要： According to one embodiment, a magnetic recording medium with high magnetic recording characteristics and improved corrosion resistance is obtained. The magnetic recording medium includes a substrate, an orientation control layer provided on the substrate and made from a Ni alloy or an Ag alloy, a nonmagnetic seed layer provided to be in contact with the orientation control layer, a perpendicular magnetic recording layer containing Fe or Co and Pt as main components. The nonmagnetic seed layer is formed of Ag particles, Ge grain boundaries and a compound X, and the compound X is selected from an oxide, nitride or carbide of aluminum, titanium, chromium, silicon and tantalum and also distributed in both the Ag particles and Ge grain boundaries.

15. 发明授权

US09595285B2 Magnetic recording medium and magnetic recording and reproducing apparatus 有权
标题翻译：磁记录介质和磁记录和再现装置
公开(公告)号：US09595285B2
公开(公告)日：2017-03-14
申请号：US14513461
申请日：2014-10-14
申请人： Kabushiki Kaisha Toshiba
发明人： Takeshi Iwasaki , Akira Fujimoto
IPC分类号： G11B5/66 , G11B5/73
CPC分类号： G11B5/7325 , G11B5/732
摘要： According to one embodiment, a magnetic recording medium includes an orientation control layer formed on a non-magnetic substrate, the orientation control layer made of a Ni alloy or Ag alloy having fcc structure, a non-magnetic seed layer made of Ag, Ge, and a metal X selected from the group consisting of Al, Mg, Au, and Ti, a non-magnetic intermediate layer made of Ru or Ru alloy, and a magnetic recording layer. The orientation control layer is in contact with the non-magnetic seed layer.
摘要翻译：根据一个实施例，磁记录介质包括形成在非磁性基板上的取向控制层，由具有fcc结构的Ni合金或Ag合金制成的取向控制层，由Ag，Ge制成的非磁性种子层，和选自Al，Mg，Au和Ti的金属X，由Ru或Ru合金制成的非磁性中间层和磁记录层。取向控制层与非磁性种子层接触。

16. 发明授权

US09412405B2 Pattern forming method and manufacturing method of magnetic recording medium 有权
标题翻译：磁记录介质的图案形成方法和制造方法
公开(公告)号：US09412405B2
公开(公告)日：2016-08-09
申请号：US14455058
申请日：2014-08-08
申请人： Kabushiki Kaisha Toshiba
发明人： Kaori Kimura , Akira Fujimoto , Akira Watanabe
IPC分类号： G11B5/84 , G11B5/855
CPC分类号： G11B5/855
摘要： According to one embodiment, disclosed is a pattern forming method including preparing a second dispersion by adding a second protective group and second solvent to fine particles including a first protective group whose surface polarity is close to that of the substrate, the fine particles containing, at least on the surface thereof, a material selected from Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Sn, Mo, Ta, W, Au, Ag, Pd, Cu, Pt, and an oxide thereof, modifying the fine particles including the first protective group with the second protective group, adding a viscosity adjustment agent to the dispersion containing the fine particles to prepare a coating solution, and applying the coating solution on the substrate to form a fine particle layer thereon.
摘要翻译：根据一个实施方案，公开了一种图案形成方法，包括通过向其表面极性接近于底物的第一保护基的细颗粒添加第二保护基和第二溶剂来制备第二分散体，所述第一保护基的微粒含有最少在其表面上选自Al，Ti，V，Cr，Mn，Fe，Co，Ni，Zn，Y，Zr，Sn，Mo，Ta，W，Au，Ag，Pd，Cu，Pt，和其氧化物，用第二保护基改性包括第一保护基的细颗粒，向含有微粒的分散体中加入粘度调节剂以制备涂布溶液，并将涂布溶液涂布在基材上以形成微细颗粒层。

17. 发明授权

US09331248B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09331248B2
公开(公告)日：2016-05-03
申请号：US14543942
申请日：2014-11-18
申请人： Kabushiki Kaisha Toshiba
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L21/00 , H01L33/40 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

18. 发明授权

US09312407B2 Light-transmitting metal electrode having hyperfine structure and process for preparation thereof 有权
标题翻译：具有超精细结构的透光金属电极及其制备方法
公开(公告)号：US09312407B2
公开(公告)日：2016-04-12
申请号：US13669793
申请日：2012-11-06
申请人： Kabushiki Kaisha Toshiba
发明人： Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa
IPC分类号： H01L33/00 , H01J1/54 , H01L31/0224 , G02F1/1343 , H01L51/52
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

19. 发明授权

US09231132B2 Process for manufacturing solar cell equipped with electrode having mesh structure 有权
标题翻译：制造具有网状结构的电极的太阳能电池的制造方法
公开(公告)号：US09231132B2
公开(公告)日：2016-01-05
申请号：US14038960
申请日：2013-09-27
申请人： Kabushiki Kaisha Toshiba
发明人： Kumi Masunaga , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi , Ryota Kitagawa , Koji Asakawa , Hideyuki Nishizawa
IPC分类号： H01L21/00 , H01L31/0236 , H01L31/0224
CPC分类号： H01L31/0236 , H01L31/022433 , Y02E10/50
摘要： A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 μm2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.
摘要翻译：一种在光入射表面侧具有低电阻率和高透明度的电极的太阳能电池，以促进使用廉价材料的载体的有效激发。太阳能电池包括光电转换层，布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。第一电极层的厚度为10〜200nm，多个贯通孔的面积为80nm〜0.8μm2，开口率为10〜66％。第一电极层可以通过使用细颗粒单颗粒层的形式的蚀刻掩模或通过嵌段共聚物的自组装或压模形成的点图案进行蚀刻来制造。

20. 发明授权

US09153363B2 Light-transmitting metal electrode and process for production thereof 有权
标题翻译：透光金属电极及其制造方法
公开(公告)号：US09153363B2
公开(公告)日：2015-10-06
申请号：US14173868
申请日：2014-02-06
申请人： Kabushiki Kaisha Toshiba
发明人： Eishi Tsutsumi , Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa
IPC分类号： H01L33/38 , H01B13/00 , H01J1/02 , H01J9/02 , H01J17/04 , H01J63/02
CPC分类号： H01B13/0036 , H01J1/02 , H01J9/02 , H01J17/04 , H01J63/02 , H01J2217/49207
摘要： The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
摘要翻译：本发明提供一种透光性金属电极，其具有基板和具有多个开口部的金属电极层。金属电极层还具有这样的连续的金属部分，即零件中的任何一个点位置连续连接而不断裂。周期性地布置金属电极层中的开口以形成多个微区域。多个微区被放置成使得其面内排列方向彼此独立地取向。金属电极层的厚度在10〜200nm的范围内。

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