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11. 发明授权

US06994945B2 Silicon-containing polymer, resist composition and patterning process 有权
公开(公告)号：US06994945B2
公开(公告)日：2006-02-07
申请号：US10085935
申请日：2002-03-01
申请人： Takanobu Takeda , Jun Hatakeyama , Toshinobu Ishihara , Tohru Kubota , Yasufumi Kubota
发明人： Takanobu Takeda , Jun Hatakeyama , Toshinobu Ishihara , Tohru Kubota , Yasufumi Kubota
IPC分类号： G03C1/73 , G03F7/039 , G03F7/30 , G03F7/36 , C08F30/08
CPC分类号： C08G77/04 , C08F230/08 , G03F7/0045 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F2220/185 , C08F214/06 , C08F220/18 , C08F222/40 , C08F214/26
摘要： Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.

12. 发明授权

US06730453B2 High molecular weight silicone compounds, resist compositions, and patterning method 有权
标题翻译：高分子量硅氧烷化合物，抗蚀剂组合物和图案化方法
公开(公告)号：US06730453B2
公开(公告)日：2004-05-04
申请号：US09887320
申请日：2001-06-25
申请人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
发明人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
IPC分类号： G03F7075
CPC分类号： G03F7/0045 , C08G77/14 , C08G77/38 , C08G77/388 , C08G77/50 , G03F7/0392 , G03F7/0757
摘要： The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is a di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′—OH or —NHCHR—R′—OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.
摘要翻译：本发明提供了包含式（1）的重复单元并且具有1,000-50,000重均分子量的高分子量硅氧烷化合物。硅氧烷化合物中的羧基或羧基和羟基的一些或全部氢原子可被酸不稳定基团取代.Z为二价至六价，非芳香族，单环或多环烃或桥环状烃基; Z是二价至六价，正或支链烃基或非芳香族单环或多环烃或桥环状烃基; x，y和z是对应于Z和Z'的化合价的1-5的整数; R 1是-OCHR-R'-OH或-NHCHR-R'-OH; R 2是烷基或烯基或单价，非芳族，多环烃或桥连环烃基; p1，p2，p3和p4为0或正数。包含作为基础树脂的高分子量硅氧烷化合物的抗蚀剂组合物对光化辐射敏感，并且具有高灵敏度和分辨率，使得它适合于用电子束或深紫外线的微细加工。由于组成在ArF或KrF准分子激光器的曝光波长处具有低吸收，因此可以容易地形成具有垂直于衬底的壁的精细限定图案。

13. 发明授权

US06309796B1 High molecular weight silicone compounds resist compositions, and patterning method 有权
标题翻译：高分子量硅氧烷化合物抵抗组合物和图案化方法
公开(公告)号：US06309796B1
公开(公告)日：2001-10-30
申请号：US09129950
申请日：1998-08-06
申请人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
发明人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
IPC分类号： G03F7075
CPC分类号： G03F7/0045 , C08G77/14 , C08G77/38 , C08G77/388 , C08G77/50 , G03F7/0392 , G03F7/0757
摘要： The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z′ is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′ —OH or —NHCHR—R′ —OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.
摘要翻译：本发明提供了包含式（1）的重复单元并且具有1,000-50,000重均分子量的高分子量硅氧烷化合物。硅烷化合物中的羧基或羧基和羟基的一部分或全部氢原子可被酸不稳定基团取代.Z为二价至六价，非芳香族，单环或多环烃基或桥环状烃基; Z'是二价至六价，正或支链烃基或非芳香族单环或多环烃或桥连环烃基; x，y和z是对应于Z和Z'的化合价的1-5的整数; R 1是-OCHR-R'-OH或-NHCHR-R'-OH; R2是烷基或链烯基或单价，非芳族，多环烃或桥连环烃基; p1，p2，p3和p4为0或正数。包含作为基础树脂的高分子量硅氧烷化合物的抗蚀剂组合物对光化辐射敏感，并且具有高灵敏度和分辨率，使得它适合于用电子束或深紫外线的微细加工。由于组成在ArF或KrF准分子激光器的曝光波长处具有低吸收，因此可以容易地形成具有垂直于衬底的壁的精细限定图案。

14. 发明授权

US08129099B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129099B2
公开(公告)日：2012-03-06
申请号：US12370901
申请日：2009-02-13
申请人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
IPC分类号： G03F7/24 , G03F7/40 , G03F7/039 , G03F7/075
CPC分类号： H01L21/0337 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/40 , H01L21/0338
摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.
摘要翻译：通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

15. 发明授权

US06902772B2 Silicon-containing polymer, resist composition and patterning process 失效
标题翻译：含硅聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06902772B2
公开(公告)日：2005-06-07
申请号：US10611014
申请日：2003-07-02
申请人： Takanobu Takeda , Jun Hatakeyama , Toshinobu Ishihara
发明人： Takanobu Takeda , Jun Hatakeyama , Toshinobu Ishihara
IPC分类号： C08F222/06 , C08F230/08 , C08F232/08 , C08G77/442 , G03F7/039 , G03F7/075 , H01L21/027 , C08J7/04
CPC分类号： C08F230/08 , C08G77/442 , G03F7/0395 , G03F7/0758
摘要： Silicon-containing polymers comprising recurring units of three components represented by the general formula (1) are novel wherein R1, R2 and R3 are hydrogen or C1-10 alkyl, R4, R5 and R6 are hydrogen, C1-20 alkyl or haloalkyl, or C6-20 aryl, R7 is C4-20 alkyl, n is 1 to 5, p, q and r are positive numbers. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching
摘要翻译：包含由通式（1）表示的三个组分的重复单元的含硅聚合物是新的，其中R 1，R 2和R 3，是氢或C 1-10烷基，R 4，R 5和R 6是氢，C 1〜 C 1-20烷基或卤代烷基，或C 6-20芳基，R 7是C 1-4-20烃基， n为1〜5，p，q，r为正数。包含聚合物的抗蚀剂组合物对高能辐射敏感，并且在小于300nm的波长下具有高灵敏度和分辨率，并改善了对氧等离子体蚀刻的耐受性

16. 发明授权

US6156481A Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US6156481A
公开(公告)日：2000-12-05
申请号：US428911
申请日：1999-10-28
申请人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
发明人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.
摘要翻译：将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。

17. 发明授权

US6048661A Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
标题翻译：聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
申请人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译：提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

18. 发明授权

US5985512A Chemically amplified positive resist compositions 失效
标题翻译：化学扩增的正性抗蚀剂组合物
公开(公告)号：US5985512A
公开(公告)日：1999-11-16
申请号：US831750
申请日：1997-04-01
申请人： Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106
摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin, and (C) a photoacid generator with a mixture of (1) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of less than 2 Torr at 100.degree. C. and (2) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of 2-100 Torr at 100.degree. C. The resist composition has high sensitivity to actinic radiation and high resolution, is developable with aqueous base to form a pattern without a T-top profile by PED and footing on the substrate surface, and is suitable for fine processing.
摘要翻译：通过将（A）有机溶剂，（B）基础树脂和（C）光酸产生剂与（1）具有pKa = 7的含氮有机化合物和在100℃下蒸气压小于2乇，（2）在100℃下pKa> = 7，蒸汽压为2-100乇的含氮有机化合物。抗蚀剂组合物对光化辐射具有高敏感性，高分辨率，可用水性基底显影，通过PED形成图案，并且在基材表面上形成基底，并适用于精细加工。

19. 发明授权

US5972560A High molecular weight silicone compound, chemically amplified positive resist composition and patterning method 失效
标题翻译：高分子量硅氧烷化合物，化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US5972560A
公开(公告)日：1999-10-26
申请号：US16448
申请日：1998-01-30
申请人： Ichiro Kaneko , Mutsuo Nakashima , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
发明人： Ichiro Kaneko , Mutsuo Nakashima , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
IPC分类号： C08G77/50 , C08L83/14 , G03F7/004 , G03F7/075 , C08G77/04
CPC分类号： G03F7/0045 , C08G77/50 , C08L83/14 , G03F7/0757
摘要： The invention provides a high molecular weight silicone compound comprising recurring units of the general formula (1) and having a weight average molecular weight of 1,000-50,000. ##STR1## Z is a di- to hexavalent, monocyclic or polycyclic hydrocarbon group or bridged cyclic hydrocarbon group of 5-12 carbon atoms, R.sup.1 is a substituted or unsubstituted alkyl or alkenyl group of 1-8 carbon atoms, R.sup.2 is an acid labile group, m is 0 or an integer, n is an integer, satisfying m+n.ltoreq.5, x is an integer, p1 and p2 are positive numbers, q is 0 or a positive number, satisfying 0
摘要翻译：本发明提供了包含通式（1）的重复单元并具有1,000-50,000的重均分子量的高分子量硅氧烷化合物。 Z是5至12个碳原子的二至六价单环或多环烃基或桥环状烃基，R1是取代或未取代的1-8个碳原子的烷基或链烯基，R2是酸不稳定基团，m 是0或整数，n是整数，满足m + n <5，x是整数，p1和p2是正数，q是0或正数，满足0

20. 发明授权

US5795700A Method for forming resist pattern with enhanced contrast film 失效
标题翻译：用增强的对比膜形成抗蚀剂图案的方法
公开(公告)号：US5795700A
公开(公告)日：1998-08-18
申请号：US604369
申请日：1996-02-21
申请人： Jun Hatakeyama , Mitsuo Umemura , Toshinobu Ishihara , Satoshi Watanabe
发明人： Jun Hatakeyama , Mitsuo Umemura , Toshinobu Ishihara , Satoshi Watanabe
IPC分类号： G03F7/26 , G03F7/09 , H01L21/027 , H01L21/30 , H01L21/47 , G03C5/00
CPC分类号： G03F7/091
摘要： A resist pattern is formed on a substrate by forming a water-soluble resist film on the substrate, forming a contrast enhancing film on the resist film from a contrast enhancing composition comprising a specific arylnitrone compound of formula (1), pre-baking the resist film before or after formation of the contrast enhancing film, exposing the resist film to light through the contrast enhancing film, baking the films after exposure, removing the contrast enhancing film after the baking step, and developing the resist film. The process forms a resist pattern having a fully rectangular profile and an improved focus margin. The conventional apparatus can be utilized without substantial modification, achieving a cost reduction. ##STR1## wherein R.sup.1, R.sup.2, and R.sup.3 are independently an alkyl radical, an aryl radical or a hydrogen atom, R.sup.4 to R.sup.8 are independently an alkyl radical, a hydrogen atom or a carboxyl radical, at least one of R.sup.4 to R.sup.8 being a carboxyl radical, X is a hydrogen atom, an alkoxy radical represented by R.sup.9 O--, or a dialkylamino radical represented by R.sup.10 R.sup.11 N-- wherein R.sup.9 is an alkyl radical, R.sup.10 and R.sup.11 are independently an alkyl radical, and letter n ha a value of 0, 1 or 2.
摘要翻译：通过在基板上形成水溶性抗蚀剂膜，在抗蚀剂膜上形成对比度增强膜，从包含特定的式（1）的芳基硝酮化合物的对比度增强组合物形成抗蚀剂图案，预烘烤抗蚀剂形成对比度增强膜之前或之后的膜，通过对比度增强膜将抗蚀剂膜曝光，在曝光后烘烤膜，在烘烤步骤之后除去对比度增强膜，并显影抗蚀剂膜。该工艺形成具有完全矩形轮廓和改进的聚焦余量的抗蚀剂图案。可以在不进行实质性修改的情况下利用传统的装置，从而实现成本降低。（1）其中R1，R2和R3独立地是烷基，芳基或氢原子，R4至R8独立地是烷基，氢原子或羧基，R4至 R8是羧基，X是氢原子，由R9O-表示的烷氧基或由R10R11N-表示的二烷基氨基，其中R9是烷基，R10和R11独立地是烷基，并且字母n是一个值为0，1或2。

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