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11. 发明授权

US06459652B1 Semiconductor memory device having echo clock path 有权
标题翻译：具有回波时钟路径的半导体存储器件
公开(公告)号：US06459652B1
公开(公告)日：2002-10-01
申请号：US09996225
申请日：2001-11-28
申请人： Jong Cheol Lee , Kwang Jin Lee
发明人： Jong Cheol Lee , Kwang Jin Lee
IPC分类号： G11C800
CPC分类号： G11C7/1066 , G11C7/1051 , G11C7/22 , G11C29/14
摘要： A semiconductor memory device effectively capable of removing skew between data output of a data output circuit and an echo clock of an echo clock generator is provided. The semiconductor memory device comprises a delay circuit comprising a plurality of delay paths for delaying the data enable clock by different time, a test controller for generating a mode select signal and a delay path test signal in response to a test code signal, and a delay signal selection circuit comprising a plurality of fuses for producing a default delay path select signal based on a programmed state of the plurality of fuses, and a multiplexer, responsive to the mode select signal, for selectively providing the default delay path select signal or the delay path test signal to the delay circuit.
摘要翻译：提供了有效地消除数据输出电路的数据输出与回波时钟发生器的回波时钟之间的偏差的半导体存储器件。半导体存储器件包括延迟电路，该延迟电路包括多个用于将数据使能时钟延迟不同时间的延迟路径，用于响应于测试代码信号产生模式选择信号和延迟路径测试信号的测试控制器以及延迟信号选择电路，包括多个保险丝，用于基于多个保险丝的编程状态产生默认延迟路径选择信号;以及复用器，响应于模式选择信号，用于选择性地提供默认延迟路径选择信号或延迟路径测试信号到延迟电路。

12. 发明申请

US20140191443A1 PREPARATION METHOD OF TUNGSTEN CARBIDE SINTERED BODY FOR FRICTION STIR WELDING TOOL 有权
标题翻译：用于摩擦焊接工具的碳化钨烧结体的制备方法
公开(公告)号：US20140191443A1
公开(公告)日：2014-07-10
申请号：US14233424
申请日：2011-12-09
申请人： Hyun Kuk Park , Ik Hyun Oh , Hee Jun Yoon , Hyeon Taek Son , Kwang Jin Lee , Hee Seon Bang , Han Sur Bang
发明人： Hyun Kuk Park , Ik Hyun Oh , Hee Jun Yoon , Hyeon Taek Son , Kwang Jin Lee , Hee Seon Bang , Han Sur Bang
IPC分类号： C04B35/64 , C04B35/56 , B23K20/12
CPC分类号： C04B35/64 , B22F3/105 , B23K20/1245 , C04B35/5626 , C04B35/645 , C04B2235/6562 , C04B2235/6581 , C04B2235/666 , C04B2235/77 , C04B2235/96 , C22C29/08
摘要： The present invention relates to a preparation method of a tungsten carbide sintered body for a friction stir welding tool used in a friction stir welding tool of a high melting point material such as steel, titanium and the like or a dissimilar material such as aluminum, magnesium-steel, titanium and the like using pulsed current activation through a discharge plasma sintering apparatus. The preparation method comprises the following steps: filling a tungsten carbide (WC) powder in a mold made of a graphite material; mounting the mold filled with tungsten carbide powder in a chamber of a discharge plasma sintering apparatus; making a vacuum inside of the chamber; molding the tungsten carbide powder while maintaining a constant pressure inside the mold and increasing the temperature according to a set heat increase pattern until the temperature reaches a final target temperature; and cooling the inside of the chamber while maintaining the pressure pressurized in the mold after the molding step. According to the preparation method of a tungsten carbide sintered body for a friction stir welding tool, it is possible to obtain a high relative density of 99.5% or higher, and to prepare a uniform sintered body having a homogeneous tissue with little particle growth, high toughness, high abrasion resistance and high strength within a short time by a single process when preparing a tungsten carbide sintered body appropriate for a friction stir welding tool by using pulsed current activation through a discharge plasma sintering apparatus. In addition, since a sintered body is prepared with only a tungsten carbide single material, excluding a sintering additive such as cobalt, a preparation method is simplified, preparation costs are reduced, and toughness, abrasion resistance and strength are superior compared with a sintered body containing cobalt, a sintering additive.
摘要翻译：本发明涉及一种用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法，该工具用于诸如钢，钛等的高熔点材料的摩擦搅拌焊接工具或诸如铝，镁之类的异种材料钢，钛等，通过放电等离子体烧结装置进行脉冲电流激活。该制备方法包括以下步骤：在由石墨材料制成的模具中填充碳化钨（WC）粉末; 将填充有碳化钨粉末的模具安装在放电等离子体烧结装置的腔室中; 在室内进行真空; 在模具内保持恒定压力的同时成型碳化钨粉末，并根据设定的热量增加模式增加温度，直到温度达到最终目标温度; 并且在模制步骤之后保持在模具中加压的压力同时冷却腔室的内部。根据用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法，可以获得99.5％以上的高相对密度，并且制备均匀的具有少量颗粒生长的均匀组织的烧结体，高当通过使用脉冲电流激活通过放电等离子体烧结装置制备适用于摩擦搅拌焊接工具的碳化钨烧结体时，通过单一工艺在短时间内具有韧性，高耐磨性和高强度。此外，由于仅使用碳化钨单一材料制成烧结体，不包括钴等烧结添加剂，因此制备方法简单，制备成本降低，韧性，耐磨耗性和强度高于烧结体含钴，烧结添加剂。

13. 发明授权

US08588010B2 Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith 有权
公开(公告)号：US08588010B2
公开(公告)日：2013-11-19
申请号：US12929349
申请日：2011-01-18
申请人： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
发明人： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
IPC分类号： G11C7/22
CPC分类号： G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
摘要： At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.

14. 发明授权

US08223527B2 Semiconductor device having memory array, method of writing, and systems associated therewith 有权
标题翻译：具有存储器阵列，写入方法和与其相关联的系统的半导体器件
公开(公告)号：US08223527B2
公开(公告)日：2012-07-17
申请号：US12289937
申请日：2008-11-07
申请人： Kwang Jin Lee , Qi Wang , Beak Hyung Cho
发明人： Kwang Jin Lee , Qi Wang , Beak Hyung Cho
IPC分类号： G11C7/00 , G11C11/00
CPC分类号： G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C13/0069 , G11C2213/72
摘要： In one embodiment, the semiconductor device, includes a non-volatile memory cell array, and a control unit configured to generate a mode signal indicating if a flash mode has been enabled. A write circuit is configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received.
摘要翻译：在一个实施例中，半导体器件包括非易失性存储单元阵列，以及控制单元，被配置为产生指示闪光模式是否被使能的模式信号。写电路被配置为基于模式信号写入非易失性存储单元阵列，使得如果闪存模式尚未被使能，则写电路禁止擦除非易失性存储单元阵列，并且指令擦除一个或多个单元接收非易失性存储单元阵列。

15. 发明授权

US07978539B2 Semiconductor device having resistance based memory array, method of reading, and systems associated therewith 有权
标题翻译：具有基于电阻的存储器阵列，读取方法和与其相关联的系统的半导体器件
公开(公告)号：US07978539B2
公开(公告)日：2011-07-12
申请号：US12292891
申请日：2008-11-28
申请人： Kwang Jin Lee , Byung Gil Choi
发明人： Kwang Jin Lee , Byung Gil Choi
IPC分类号： G11C7/22
CPC分类号： G11C8/10 , G11C8/12 , G11C13/00 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C15/046 , G11C2013/0076
摘要： In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.
摘要翻译：在一个实施例中，半导体器件包括非易失性存储单元阵列。非易失性存储单元阵列的存储单元是基于电阻的，并且每个存储单元具有在将数据写入存储单元之后随时间而改变的电阻。写地址缓冲器被配置为存储与被写入非易失性存储单元阵列的数据相关联的写地址，并且读单元被配置为执行读操作以从非易失性存储单元阵列读取数据。读取单元被配置为基于读取地址是否匹配所存储的写入地址之一和写入的数据的建立时间的至少一个指示来控制在读取操作期间施加到非易失性存储器单元阵列的读取电流非易失性存储单元阵列。

16. 发明授权

US07686955B2 Submerged hollow fiber membrane module 有权
标题翻译：浸没式中空纤维膜组件
公开(公告)号：US07686955B2
公开(公告)日：2010-03-30
申请号：US10579194
申请日：2004-02-05
申请人： Moo Seok Lee , Kwang Jin Lee , Yong Cheol Shin , Seong Hak Choi , Youn Tai Woo
发明人： Moo Seok Lee , Kwang Jin Lee , Yong Cheol Shin , Seong Hak Choi , Youn Tai Woo
IPC分类号： B01D63/02 , B01D61/00
CPC分类号： B01D69/04 , B01D63/02 , B01D63/027 , B01D65/08 , B01D2315/06 , B01D2321/185 , B01D2321/2058 , C02F1/44 , C02F1/444
摘要： The present invention discloses a submerged hollow fiber membrane module which is of such a structure that it is easy to expand a module processing capability according to a treatment capacity, provides convenient module coupling properties and module manufacturing properties, maintains a stable flux under an efficient air diffusion condition and prevents the damage of membranes and water leakage caused by the loosening of module connecting regions. The submerged hollow fiber membrane module comprises [I] two module headers (2 and 2′) having a filtrate water collecting portion (3) for collecting filtrate water filtered through hollow fiber membranes and a filtrate water outlet (7), [II] an air diffusion unit 8 consisting of support tubes (9 and 9′) fixing the two module headers (2 and 2′) while keeping them spaced a predetermined distance and air diffusion tubes (11 and 11′) having air diffusion holes (13), and [III] a bundle of hollow fiber membranes (1) having both opposite ends fixed to the insides of the module headers (2 and 2′) by an adhesive (6) so as to form a water collecting space within the module headers (2 and 2′), the ends (5) of the hollow portions of the hollow fiber (20) membranes being opened and disposed in parallel to a filtrate water discharge surface (4).
摘要翻译：本发明公开了一种浸没式中空纤维膜组件，其具有根据处理能力容易扩展模块加工能力的结构，提供了方便的模块耦合性能和模块制造性能，在有效空气下保持稳定的焊剂扩散条件，防止模块连接区域松动引起的膜损伤和漏水。浸没式中空纤维膜组件包括[I]两个具有滤液收集部分（3）的模块集管（2和2'），用于收集通过中空纤维膜过滤的滤液和滤液水出口（7），[II] 空气扩散单元8，其由支撑管（9和9'）组成，固定两个模块集管（2和2'），同时保持它们间隔预定距离，并具有空气扩散孔（13）的空气扩散管（11和11'），和[III]一束中空纤维膜（1），其两个相对端通过粘合剂（6）固定到模块集管（2和2'）的内部，以便在模块集管内形成集水空间（ 2和2'），中空纤维（20）膜的中空部分的端部（5）与滤液排水表面（4）平行地打开和设置。

17. 发明申请

US20090237978A1 Semiconductor device having resistance based memory array, method of reading, and systems associated therewith 有权
标题翻译：具有基于电阻的存储器阵列，读取方法和与其相关联的系统的半导体器件
公开(公告)号：US20090237978A1
公开(公告)日：2009-09-24
申请号：US12292891
申请日：2008-11-28
申请人： Kwang Jin Lee , Byung Gil Choi
发明人： Kwang Jin Lee , Byung Gil Choi
IPC分类号： G11C7/10 , G11C11/21
CPC分类号： G11C8/10 , G11C8/12 , G11C13/00 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C15/046 , G11C2013/0076
摘要： In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.
摘要翻译：在一个实施例中，半导体器件包括非易失性存储单元阵列。非易失性存储单元阵列的存储单元是基于电阻的，并且每个存储单元具有在将数据写入存储单元之后随时间而改变的电阻。写地址缓冲器被配置为存储与被写入非易失性存储单元阵列的数据相关联的写地址，并且读单元被配置为执行读操作以从非易失性存储单元阵列读取数据。读取单元被配置为基于读取地址是否匹配所存储的写入地址之一和写入的数据的建立时间的至少一个指示来控制在读取操作期间施加到非易失性存储器单元阵列的读取电流非易失性存储单元阵列。

18. 发明申请

US20080305290A1 A Braid-Reinforced Composite Hollow Fiber Membrane 有权
标题翻译：辫状增强复合中空纤维膜
公开(公告)号：US20080305290A1
公开(公告)日：2008-12-11
申请号：US12095294
申请日：2006-11-28
申请人： Moo Seok Lee , Kwang Jin Lee , Yong-Cheol Shin
发明人： Moo Seok Lee , Kwang Jin Lee , Yong-Cheol Shin
IPC分类号： B32B1/08
CPC分类号： B01D69/08 , B01D69/12 , B01D2323/02 , B01D2325/24 , B01D2325/36 , B01D2325/40 , Y10T428/1372
摘要： A braid-reinforced composite hollow fiber membrane is disclosed. The braid-reinforced composite hollow fiber membrane comprising a reinforcing material of a tubular braid and a polymer resinous thin film coated on the surface of the tubular braid is characterized in that: the tubular braid comprises multifilaments made of monofilaments having a fineness of 0.01 to 0.4 denier, and the peeling strength of the tubular braid and a polymer resinous thin film coated on the surface thereof is 1 to 10 MPa. In the composite hollow fiber membrane, the fineness of the mono filaments constituting the tubular braid of the reinforcing material is small, that is, 0.01 to 0.4 denier, thus the surface area of the tubular braid contacted with the polymer resinous thin film is increased. Thus, the peeling strength of the tubular braid and the polymer resinous thin film coated on the surface thereof is excellent, and at the same time, the initial wetting property of the composite hollow fiber membrane is excellent, that is, 80 to 120%, due to a capillary tube phenomenon or the like.
摘要翻译：公开了一种编织增强复合中空纤维膜。包括管状编织物的增强材料和涂覆在管状编织物表面上的聚合物树脂薄膜的编织增强复合中空纤维膜的特征在于：管状编织物包含由细度为0.01至0.4的单丝制成的复丝旦尼尔，管状编织物的剥离强度和涂布在其表面上的聚合物树脂薄膜的剥离强度为1〜10MPa。在复合中空纤维膜中，构成增强材料的管状编织物的单丝的细度小，即0.01〜0.4旦尼尔，因此与聚合物树脂薄膜接触的管状编织物的表面积增加。因此，管状编织物和其表面上涂覆的聚合物树脂薄膜的剥离强度优异，同时复合中空纤维膜的初始润湿性优异，即80〜120％由于毛细管现象等。

19. 发明申请

US20080230466A1 Submerged Hollow Fiber Membrane Module 有权
标题翻译：中空纤维膜模块
公开(公告)号：US20080230466A1
公开(公告)日：2008-09-25
申请号：US10593480
申请日：2005-04-06
申请人： Kwang Jin Lee , Moo Seok Lee , Yong Cheol Shin , Seong Hak Choi , Young Tai Woo
发明人： Kwang Jin Lee , Moo Seok Lee , Yong Cheol Shin , Seong Hak Choi , Young Tai Woo
IPC分类号： B01D63/02
CPC分类号： B01D63/02 , B01D61/18 , B01D63/026 , B01D65/08 , B01D2313/06 , B01D2313/08 , B01D2315/06 , B01D2321/185 , C02F1/444
摘要： Disclosed is a submerged hollow fiber membrane module which is easy to expand, has a small installation area, and exhibits excellent contamination prevention and durability. The submerged hollow fiber membrane module comprises: (I) a module body divided into two portions which has a permeated water collection space (5) and a permeated water outlet (3); (II) module support tubes (17) which are vertically connected to the upper and lower ends of the module body; (III) a plate type module header insertion layer which is provided with hollow fiber membrane spaces (10), and is inserted into the module body; (IV) a plate type diffusion layer which is provided with a diffusion port (4) and diffusion tubes (11) and is inserted into the module body subsequent to the module header insertion layer; and (V) module headers which are inserted into the module header insertion layer.
摘要翻译：公开了一种容易膨胀，安装面积小，防污染性和耐久性优异的浸没式中空纤维膜组件。浸没式中空纤维膜组件包括：（I）分为两部分的模块体，其具有渗透水收集空间（5）和渗透水出口（3）; （II）模块支撑管（17），其垂直连接到模块主体的上端和下端; （III）板型模块插头层，其设置有中空纤维膜空间（10），并插入模块体内; （IV）板式扩散层，其具有扩散口（4）和扩散管（11），并在模块插入层之后插入模块体内; 和（V）模块插头插入模块插头层。

20. 发明授权

US09580361B2 Preparation method of tungsten carbide sintered body for friction stir welding tool 有权
标题翻译：用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法
公开(公告)号：US09580361B2
公开(公告)日：2017-02-28
申请号：US14233424
申请日：2011-12-09
申请人： Hyun Kuk Park , Ik Hyun Oh , Hee Jun Yoon , Hyeon Taek Son , Kwang Jin Lee , Hee Seon Bang , Han Sur Bang
发明人： Hyun Kuk Park , Ik Hyun Oh , Hee Jun Yoon , Hyeon Taek Son , Kwang Jin Lee , Hee Seon Bang , Han Sur Bang
IPC分类号： C04B35/64 , B22F3/105 , C04B35/56 , C04B35/645 , B23K20/12 , C22C29/08
CPC分类号： C04B35/64 , B22F3/105 , B23K20/1245 , C04B35/5626 , C04B35/645 , C04B2235/6562 , C04B2235/6581 , C04B2235/666 , C04B2235/77 , C04B2235/96 , C22C29/08
摘要： The present invention relates to a preparation method of a tungsten carbide sintered body for a friction stir welding tool used in a friction stir welding tool of a high melting point material such as steel, titanium and the like or a dissimilar material such as aluminum, magnesium-steel, titanium and the like. The preparation method comprises the following steps: filling a tungsten carbide (WC) powder in a mold made of a graphite material; mounting the mold filled with tungsten carbide powder in a chamber of a discharge plasma sintering apparatus; making a vacuum inside of the chamber; molding the tungsten carbide powder while maintaining a constant pressure inside the mold and increasing the temperature according to a set heat increase pattern until the temperature reaches a final target temperature; and cooling the inside of the chamber while maintaining the pressure pressurized in the mold after the molding step.
摘要翻译：本发明涉及一种用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法，该工具用于诸如钢，钛等的高熔点材料的摩擦搅拌焊接工具或诸如铝，镁之类的异种材料钛，钛等。该制备方法包括以下步骤：在由石墨材料制成的模具中填充碳化钨（WC）粉末; 将填充有碳化钨粉末的模具安装在放电等离子体烧结装置的腔室中; 在室内进行真空; 在模具内保持恒定压力的同时成型碳化钨粉末，并根据设定的热量增加模式增加温度，直到温度达到最终目标温度; 并且在模制步骤之后保持在模具中加压的压力同时冷却腔室的内部。

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