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    • 12. 发明授权
    • Backlight unit
    • 背光单元
    • US08558476B2
    • 2013-10-15
    • US13464566
    • 2012-05-04
    • Won ChoBi-Yong Jeong
    • Won ChoBi-Yong Jeong
    • H05B41/16
    • H05B33/0821G02F1/133603G02F1/133609H01L25/0753H01L33/50H01L2924/0002H05B33/0857H01L2924/00
    • The present invention relates to a backlight unit that includes at least one first light emitting diode (LED) package and at least one second LED package, wherein the first LED package includes a blue LED chip, a green LED chip, and a first phosphor, the first phosphor being excited by blue light and to emit light to be mixed with blue light and green light respectively emitted from the blue LED chip and the green LED chip, the first LED package to thereby emit white light. The second LED package includes a blue LED chip, a red LED chip, and a second phosphor, the second phosphor being excited by blue light and to emit light to be mixed with blue light and red light respectively emitted from the blue LED chip and the red LED chip, the second LED package to thereby emit white light.
    • 本发明涉及一种背光单元,其包括至少一个第一发光二极管(LED)封装和至少一个第二LED封装,其中所述第一LED封装包括蓝色LED芯片,绿色LED芯片和第一荧光体, 第一荧光体被蓝光激发,并发出与蓝色LED芯片和绿色LED芯片分别发射的蓝色光和绿色光的光,第一LED封装,从而发出白色光。 第二LED封装包括蓝色LED芯片,红色LED芯片和第二荧光体,第二荧光体被蓝色光激发,并发出与蓝色LED芯片分别发出的蓝色和红色光混合的光, 红色LED芯片,第二个LED封装,从而发出白光。
    • 14. 发明申请
    • Process for the preparation of dimethylether from hydrocarbons
    • 从碳氢化合物制备二甲醚的方法
    • US20060287405A1
    • 2006-12-21
    • US11450580
    • 2006-06-10
    • Young BaekWon ChoByoung ChoJung SuhDong KimHyung KimSeung LeeWoo Ju
    • Young BaekWon ChoByoung ChoJung SuhDong KimHyung KimSeung LeeWoo Ju
    • C07C27/06
    • C07C41/09C07C41/01C07C43/043
    • Disclosed herein is a process for the preparation of dimethylether from hydrocarbons, including tri-reforming a feedstock mixture comprised of hydrocarbons, carbon dioxide and water vapor in the presence of a tri-reforming catalyst, to prepare a syngas, which then undergoes gas-phase direct synthesis into dimethylether in one step in the presence of a hybrid catalyst. According to the process of this invention, three main processes among typical syngas preparation processes are simultaneously performed, and then, the syngas thus obtained is prepared into dimethylether through a direct reaction in one step, thereby decreasing the apparatus cost and operation cost. In addition, all of the carbon dioxide separated and recovered from the unreacted material and by-products may be reused as reaction material, thus decreasing the generation of carbon dioxide and reducing the material cost.
    • 本文公开了一种从烃制备二甲醚的方法,包括在三重转化催化剂的存在下,由烃,二氧化碳和水蒸气组成的原料混合物进行三重重整,以制备合成气,然后合成气经历气相 在混合催化剂存在下,在一个步骤中直接合成二甲醚。 根据本发明的方法,同时进行典型的合成气制备过程中的三个主要过程,然后通过一步直接反应将由此获得的合成气制备成二甲醚,从而降低设备成本和操作成本。 此外,从未反应的物质和副产物中分离回收的二氧化碳全部可以作为反应物质再利用,从而减少二氧化碳的产生并降低材料成本。
    • 15. 发明申请
    • Transistor using impact ionization and method of manufacturing the same
    • 使用冲击电离的晶体管及其制造方法
    • US20060125041A1
    • 2006-06-15
    • US11296152
    • 2005-12-06
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • H01L27/095
    • H01L29/66659H01L21/26586H01L21/28052H01L21/28202H01L29/495H01L29/518H01L29/665H01L29/66643H01L29/7835H01L29/7839
    • A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
    • 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层,栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成,并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入,形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准,由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。