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11. 发明申请

US20060164439A1 SYSTEM AND METHOD FOR INSERTING CONTENT INTO AN IMAGE SEQUENCE 审中-公开
标题翻译：将内容插入图像序列的系统和方法
公开(公告)号：US20060164439A1
公开(公告)日：2006-07-27
申请号：US11278722
申请日：2006-04-05
申请人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
发明人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
IPC分类号： G09G5/00
CPC分类号： G06T15/20 , H04N5/272 , H04N5/2723
摘要： Systems and methods for augmenting an image sequence with content are disclosed. A system may include a character generator, a graphics frame buffer and a graphics insertion system. The character generator may generate pixel block content. The graphics frame buffer may be in communication with the character generator and store the pixel block content. The graphics insertion system may be in communication with the first graphics frame buffer. The graphics insertion system may be used to retrieve the pixel block content from the first graphics frame buffer and modify an image sequence with an insert graphic based on the pixel block content.
摘要翻译：公开了用于增加具有内容的图像序列的系统和方法。系统可以包括字符发生器，图形帧缓冲器和图形插入系统。字符生成器可以生成像素块内容。图形帧缓冲器可以与字符发生器通信并存储像素块内容。图形插入系统可以与第一图形帧缓冲器通信。图形插入系统可以用于从第一图形帧缓冲器检索像素块内容，并且基于像素块内容使用插入图形修改图像序列。

12. 发明申请

US20050285877A1 Video event statistic tracking system 有权
标题翻译：视频事件统计跟踪系统
公开(公告)号：US20050285877A1
公开(公告)日：2005-12-29
申请号：US11146956
申请日：2005-06-07
申请人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall , Matthew Rosen
发明人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall , Matthew Rosen
IPC分类号： G09G5/00
CPC分类号： G06T7/246 , G06T7/97 , G06T2207/10016 , G06T2207/30221 , G06T2207/30241
摘要： A method for calculating a parameter from an image sequence includes selecting a first frame and a second frame in an image sequence. The image sequence has a frame speed. The image sequence or another image sequence is enhanced using a calculation that considers the frame speed and selected frames. The enhancement may be with text, graphics or both such as those that may present statistics corresponding to an event in the image sequence.
摘要翻译：一种从图像序列计算参数的方法包括：选择图像序列中的第一帧和第二帧。图像序列具有帧速度。使用考虑帧速度和所选帧的计算来增强图像序列或另一图像序列。增强可以是文本，图形或两者，例如可以呈现与图像序列中的事件相对应的统计的那些。

13. 发明授权

US06921194B2 Device for mixing a flowable or pourable medium, especially a highly viscous medium 有权
标题翻译：用于混合可流动或可倾倒的介质，特别是高粘度介质的装置
公开(公告)号：US06921194B2
公开(公告)日：2005-07-26
申请号：US10432046
申请日：2001-11-15
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： B01F7/16 , B01F7/00 , B01F15/00 , B01F7/20
CPC分类号： B01F7/00558 , B01F7/00591
摘要： A device for mixing a flowable or pourable medium has a container for receiving the medium and a rotatable shaft having radially projecting support arms and rotatable in a direction of rotation. Mixing elements are connected to the radially projecting support arms. The mixing elements are tubular and formed as coil-shaped spirals conically shaped at least across a partial length of the coil-shaped spirals. The coil-shaped spirals have a first end face and a second end face. The first end face points in the direction of rotation and has a cross-section greater than the cross-section of the second end face. The coil-shaped spirals have a central axis having a slant angle relative to a plane of rotation of the two mixing elements. The support arms and the coil-shaped spirals connected to the support arms, respectively, are formed of a single wire as a monolithic part, respectively.
摘要翻译：用于混合可流动或可流动的介质的装置具有用于接收介质的容器和具有径向突出的支撑臂并可沿旋转方向旋转的可旋转轴。混合元件连接到径向突出的支撑臂。混合元件是管状的，并且形成为至少跨越螺旋形螺旋的部分长度的圆锥形状的线圈形螺旋形。线圈状螺旋具有第一端面和第二端面。第一端面指向旋转方向，并且其横截面大于第二端面的横截面。线圈形螺旋具有相对于两个混合元件的旋转平面具有倾斜角的中心轴线。分别连接到支撑臂的支撑臂和线圈状螺旋分别由作为整体部件的单线形成。

14. 发明授权

US5233717A Method and device for treatment of a material web, in particular a fabric web 失效
标题翻译：用于处理材料网的方法和装置，特别是织物网
公开(公告)号：US5233717A
公开(公告)日：1993-08-10
申请号：US656160
申请日：1991-05-02
申请人： Hans Weber , Werner Keller
发明人： Hans Weber , Werner Keller
IPC分类号： D06B3/10 , D06B1/02 , D06B5/08 , D06B21/00
CPC分类号： D06B21/00 , D06B1/02 , D06B5/08
摘要： The material web (15) is guided through a treatment zone which is formed by numerous collector tubes (33, 34, 35) and by a shaft. Each collector tube is provided with a separate connection (36, 37, 38) and can be fed with its own treatment medium. The collector tubes preferably form a unit which is adjustable through a limited range in relation to the fabric web (15). Through the combined use of liquid and gaseous treatment mediums (44, 45, 46) an intense effect can be achieved, for example for washing, impregnating or similar.
摘要翻译： PCT No.PCT / CH90 / 00221 Sec。 371日期1991年5月2日 102（e）1991年5月2日PCT PCT 1990年9月18日PCT公布。公开号WO91 / 04367 1991年4月4日，材料纤维网（15）被引导通过由多个收集管（33,34,35）和轴形成的处理区。每个收集管设置有单独的连接（36,37,38），并且可以供给其自己的处理介质。收集管优选地形成一个可相对于织物幅（15）在有限范围内调节的单元。通过组合使用液体和气体处理介质（44,45,46），可以获得强烈的效果，例如用于洗涤，浸渍或类似的。

15. 发明授权

US09112053B2 Method for producing a semiconductor device including a dielectric layer 有权
标题翻译：用于制造包括电介质层的半导体器件的方法
公开(公告)号：US09112053B2
公开(公告)日：2015-08-18
申请号：US13537374
申请日：2012-06-29
申请人： Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
发明人： Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
IPC分类号： H01L21/8234 , H01L27/06 , H01L29/40 , H01L29/66 , H01L29/78 , H01L29/06
CPC分类号： H01L29/7802 , H01L21/823437 , H01L21/823481 , H01L21/823487 , H01L27/0629 , H01L29/0653 , H01L29/407 , H01L29/66734 , H01L29/7828
摘要： A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer.
摘要翻译：具有电介质层的半导体器件通过向半导体本体提供延伸到半导体本体中的第一沟槽，第一沟槽具有底部和侧壁来制造。第一电介质层形成在第一沟槽的下部的侧壁上，第一插塞形成在第一沟槽的下部，以覆盖第一电介质层。第一个塞子留下未覆盖的侧壁的上部。牺牲层形成在第一沟槽的上部的侧壁上，第二插塞形成在第一沟槽的上部。除去牺牲层以形成具有侧壁和底部的第二沟槽。第二介电层形成在第二沟槽中并延伸到第一介电层。

16. 发明授权

US08742550B2 Charge compensation semiconductor device 有权
标题翻译：充电补偿半导体器件
公开(公告)号：US08742550B2
公开(公告)日：2014-06-03
申请号：US13541884
申请日：2012-07-05
申请人： Hans Weber , Franz Hirler
发明人： Hans Weber , Franz Hirler
IPC分类号： H01L21/02
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/66727 , H01L29/7816
摘要： A semiconductor device is provided. The semiconductor device includes a semiconductor body and a source metallization which is arranged on the semiconductor body. The semiconductor body includes in a cross-section a drift region of a first conductivity type, a first body region of a second conductivity type which adjoins the drift region, a first compensation region of the second conductivity type which adjoins the first body region, has a lower maximum doping concentration than the first body region and forms a first pn-junction with the drift region, and a first charge trap. The first charge trap adjoins the first compensation region and includes a field plate and an insulating region which adjoins the drift region and partly surrounds the field plate. The source metallization is arranged in resistive electric connection with the first body region. Further, a method for producing a semiconductor device is provided.
摘要翻译：提供半导体器件。半导体器件包括半导体本体和布置在半导体本体上的源极金属化。半导体本体包括第一导电类型的漂移区域，邻接漂移区域的第二导电类型的第一体区域，邻接第一体区域的第二导电类型的第一补偿区域具有比第一体区低的最大掺杂浓度，并与漂移区形成第一pn结，以及第一电荷阱。第一电荷陷波器与第一补偿区域相邻并且包括场板和与漂移区域相邻并部分地围绕场板的绝缘区域。源极金属化被布置成与第一体区电阻电连接。此外，提供了一种用于制造半导体器件的方法。

17. 发明申请

US20130307058A1 Semiconductor Devices Including Superjunction Structure and Method of Manufacturing 审中-公开
标题翻译：包括超结构结构和制造方法的半导体器件
公开(公告)号：US20130307058A1
公开(公告)日：2013-11-21
申请号：US13475302
申请日：2012-05-18
申请人： Uwe Wahl , Franz Hirler , Hans Weber
发明人： Uwe Wahl , Franz Hirler , Hans Weber
IPC分类号： H01L29/78 , H01L29/06 , H01L21/20
CPC分类号： H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66143 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface.
摘要翻译：半导体器件包括具有第一表面和与第一表面相对的第二表面的半导体本体。半导体主体中的超结构结构包括第一导电类型的漂移区域和在与第一表面平行的第一方向上交替设置的补偿结构。每个电荷补偿结构包括与第一导电类型互补的第二导电类型的第一半导体区域和包括与第一半导体区域相邻的第二导电类型的第二半导体区域的第一沟槽。第一半导体区域和第一沟槽在垂直于第一表面的第二方向上依次布置。

18. 发明申请

US20130005101A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER 审中-公开
标题翻译：用于生产包括介电层的半导体器件的方法
公开(公告)号：US20130005101A1
公开(公告)日：2013-01-03
申请号：US13173872
申请日：2011-06-30
申请人： Hans Weber , Franz Hirler , Andreas Peter Meiser
发明人： Hans Weber , Franz Hirler , Andreas Peter Meiser
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/407 , H01L29/66734
摘要： A method for producing a semiconductor device with a dielectric layer includes: providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall; forming a first dielectric layer on the sidewall in a lower portion of the first trench; forming a first plug in the lower portion of the first trench so as to cover the first dielectric layer, the first plug leaving an upper portion of the sidewall uncovered; forming a sacrificial layer on the sidewall in the upper portion of the first trench; forming a second plug in the upper portion of the first trench; removing the sacrificial layer, so as to form a second trench having sidewalls and a bottom; and forming a second dielectric layer in the second trench and extending to the first dielectric layer.
摘要翻译：一种制造具有电介质层的半导体器件的方法包括：向半导体本体提供延伸到半导体本体中的第一沟槽，第一沟槽具有底部和侧壁; 在所述第一沟槽的下部的所述侧壁上形成第一电介质层; 在所述第一沟槽的下部形成第一插头以覆盖所述第一介电层，所述第一插头离开所述侧壁的上部未被覆盖; 在所述第一沟槽的上部的侧壁上形成牺牲层; 在所述第一沟槽的上部形成第二插头; 去除所述牺牲层，以便形成具有侧壁和底部的第二沟槽; 以及在所述第二沟槽中形成第二电介质层并延伸到所述第一电介质层。

19. 发明授权

US08319261B2 Semiconductor component structure with vertical dielectric layers 有权
标题翻译：具有垂直电介质层的半导体元件结构
公开(公告)号：US08319261B2
公开(公告)日：2012-11-27
申请号：US12984934
申请日：2011-01-05
申请人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
发明人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/76224 , H01L27/0629 , H01L29/0646 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/66734 , H01L29/7804
摘要： A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.
摘要翻译：描述了具有半导体本体的半导体部件，该半导体本体具有第一和第二侧面，边缘和与横向方向上的边缘相邻的边缘区域。

20. 发明申请

US20120262171A1 Method of magnetic resonance imaging for the selection and recording of curved slices 有权
标题翻译：用于选择和记录弯曲切片的磁共振成像方法
公开(公告)号：US20120262171A1
公开(公告)日：2012-10-18
申请号：US13443908
申请日：2012-04-11
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
IPC分类号： G01R33/54
CPC分类号： G01R33/4833 , G01R33/483 , G01R33/4835 , G01R33/4836
摘要： A method of MR imaging applies a magnetic field Bgrad1 having a spatially non-linear dependence to select a volume of at least one curved slice. The slice is described by its midsurface AM, a volume of the selected slice being made up of nν partial volumes in each of which gradients of at least one pair of remaining superimposed magnetic fields Bgradi (i>1) exhibit an angle dependence of 70° to 110° with respect to one another and with respect to the normal of the midsurface AM. At least one superimposed magnetic field of the respective pair exhibits a spatially non-linear dependence and combinations of these pairs are used for spatial encoding. In this way, curved surfaces can be mapped efficiently in high resolution and the method can be adapted to the slice shape.
摘要翻译： MR成像的方法应用具有空间非线性依赖性的磁场Bgrad1来选择至少一个弯曲切片的体积。切片由其中心面AM描述，所选切片的体积由n＆ngr组成; 至少一对剩余叠加磁场Bgradi（i> 1）的梯度中的每一个的部分体积相对于彼此表现出70°至110°的角度依赖性，并且相对于中空面AM的法线呈现角度依赖性。相应对的至少一个叠加的磁场表现出空间非线性相关性，并且这些对的组合用于空间编码。以这种方式，可以高分辨率地有效地映射曲面，并且该方法可以适应于切片形状。

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