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    • 14. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US07066787B2
    • 2006-06-27
    • US10765147
    • 2004-01-28
    • Masayuki NakanishiYou IshiiKenro Nakamura
    • Masayuki NakanishiYou IshiiKenro Nakamura
    • B24B49/00B24B51/00B24B7/00
    • B24B9/065B24B21/002
    • A substrate processing apparatus is used for removing surface irregularities occurring on a peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate, such as a semiconductor wafer, and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and causing relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and causing relative movement between this polishing tape and the substrate to polish the bevel portion of the substrate.
    • 基板处理装置用于去除诸如半导体晶片的基板的外围部分(斜面部分,边缘部分和凹口)上出现的表面凹凸,以及作为污染物沉积在其周边部分上的薄膜 底物。 基板处理装置包括:边缘部分抛光机,用于将研磨带压靠在基板的边缘部分上,并引起研磨带与基板之间的相对运动以抛光基板的边缘部分;以及斜面部分抛光机,用于按压 抛光带抵靠基板的斜面部分,并引起该抛光带与基板之间的相对移动以抛光基板的斜面部分。
    • 16. 发明授权
    • Heat treatment furnace
    • 热处理炉
    • US06767504B2
    • 2004-07-27
    • US10122144
    • 2002-04-15
    • Kiyoyuki HattoriYou IshiiToshiyuki Harada
    • Kiyoyuki HattoriYou IshiiToshiyuki Harada
    • C21B724
    • F27B9/38C21D1/74C21D1/773C21D9/0006F27B9/04F27D7/06F27D2019/0009
    • In a heat treating method and furnace used in this method which can prevent disturbance of an atmosphere gas inside a heat chamber, and can prevent deterioration of the processing quality and efficiency of work, a control section 4 first operates a vacuum pump VP to reduce the inner pressure of a purge chamber 3 to a predetermined pressure level, then manipulates a large and small caliber operating valve (13a, 13b) to supply the atmosphere from the interior of the heat chamber 1 to that of the purge chamber 3, and the control section 4 actuates transporting means 5 to transport the work W between the purge chamber 3 and the heat chamber 1 in a state wherein the inner pressures of the purge chamber 3 and the heat chamber 1 have been rendered substantially equal on the basis of detected values from first and second pressure sensors PS1, PS2.
    • 在该方法中使用的热处理方法和炉子中,能够防止加热室内的气氛气体的干扰,能够防止加工质量的劣化和加工效率的降低,控制部4首先对真空泵VP进行动作, 净化室3的内部压力达到预定压力水平,然后操作大口径和小口径的操作阀(13a,13b)以将气体从加热室1的内部供应到净化室3的气体,并且控制 基于检测值的检测值,在清洗室3和加热室1的内部压力基本相等的状态下,第4部分致动输送装置5,以将清洗室3和加热室1之间的工件W输送到 第一和第二压力传感器PS1,PS2。