专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07042032B2 Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation 有权
标题翻译：具有侧壁间隔层隔离的磁阻（MR）磁数据存储装置
公开(公告)号：US07042032B2
公开(公告)日：2006-05-09
申请号：US10401945
申请日：2003-03-27
申请人： Wen-Chin Lin , Denny Duan-Lee Tang , Chao-Hsiung Wang
发明人： Wen-Chin Lin , Denny Duan-Lee Tang , Chao-Hsiung Wang
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.
摘要翻译：磁阻磁数据存储产品及其制造方法都采用形成在衬底上的磁数据存储装置。磁数据存储装置包括通过电介质间隔物材料层与固定磁阻材料层分离的自由磁阻材料层，每层具有侧壁。磁数据存储产品还包括环形围绕并覆盖自由磁阻材料层和钉扎磁阻材料层中的至少一个的侧壁的侧壁间隔物材料层。磁数据存储产品采用增强的磁数据存储密度制造。

12. 发明授权

US07035083B2 Interdigitated capacitor and method for fabrication thereof 有权
标题翻译：交叉电容器及其制造方法
公开(公告)号：US07035083B2
公开(公告)日：2006-04-25
申请号：US10804899
申请日：2004-03-19
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chung-Long Chang , Chun-Hon Chen
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chung-Long Chang , Chun-Hon Chen
IPC分类号： H01G4/06
CPC分类号： H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.
摘要翻译：在微电子产品中使用的电容器采用第一电容器板层，其包括第一系列水平分离和互连的尖齿。电容器电介质层将第一电容器板层与第二电容器板层分开。第二电容器板层包括与第一系列水平分离和互相联接的齿水平地交叉指向的第二系列水平分离和互连的齿。使用自对准方法形成电容器，并且电容器介电层形成为蛇形形状。

13. 发明申请

US20050077485A1 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US20050077485A1
公开(公告)日：2005-04-14
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： G21G5/00 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

14. 发明授权

US08828745B2 Method for manufacturing through-silicon via 有权
标题翻译：硅通孔制造方法
公开(公告)号：US08828745B2
公开(公告)日：2014-09-09
申请号：US13176790
申请日：2011-07-06
申请人： Wei-Che Tsao , Chia-Lin Hsu , Jen-Chieh Lin , Teng-Chun Tsai , Hsin-Kuo Hsu , Ya-Hsueh Hsieh , Ren-Peng Huang , Chih-Hsien Chen , Wen-Chin Lin , Yung-Lun Hsieh
发明人： Wei-Che Tsao , Chia-Lin Hsu , Jen-Chieh Lin , Teng-Chun Tsai , Hsin-Kuo Hsu , Ya-Hsueh Hsieh , Ren-Peng Huang , Chih-Hsien Chen , Wen-Chin Lin , Yung-Lun Hsieh
IPC分类号： H01L21/66 , H01L21/306 , H01L21/304 , H01L21/768 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/31053 , H01L21/3212 , H01L21/76898 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.
摘要翻译：一种制造TSV的方法，其中该方法包括以下几个步骤：提供具有基板和ILD层（层间电介质层）的堆叠结构，其中穿透ILD层并进一步延伸到基板中的开口是形成。在堆叠结构和开口的侧壁上形成绝缘体层和金属阻挡层之后，在堆叠结构上形成顶部金属层以实现开口。进行停止在阻挡层上的第一平面化处理以去除顶部金属层的一部分。随后进行停止在ILD层上的第二平坦化处理以去除金属阻挡层的一部分，绝缘体层的一部分和顶部金属层的一部分，其中第二平坦化工艺具有由光线确定的抛光终点干涉测量或电机电流。

15. 发明授权

US08263959B2 Phase change memory device and method of manufacture thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US08263959B2
公开(公告)日：2012-09-11
申请号：US11746315
申请日：2007-05-09
申请人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
发明人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1683
摘要： A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
摘要翻译：提供一种制造存储器件的方法。该方法包括在衬底上形成电极。该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。该方法还包括在电极上和锥形电极接触表面上形成相变特征。

16. 发明授权

US07622358B2 Semiconductor device with semi-insulating substrate portions and method for forming the same 失效
标题翻译：具有半绝缘基板部分的半导体器件及其形成方法
公开(公告)号：US07622358B2
公开(公告)日：2009-11-24
申请号：US11241574
申请日：2005-09-30
申请人： Wen-Chin Lin , Denny Tang , Chuan-Ying Lee , Hsu Chen Cheng
发明人： Wen-Chin Lin , Denny Tang , Chuan-Ying Lee , Hsu Chen Cheng
IPC分类号： H01L21/76
CPC分类号： H01L21/76 , H01L21/263 , H01L21/26506 , H01L21/266 , H01L21/823481 , H01L21/823878 , H01L27/08
摘要： A method for forming semi-insulating portions in a semiconductor substrate provides depositing a hardmask film over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The hardmask is patterned creating openings through which charged particles pass and enter the substrate during an implantation process. The semi-insulating portions may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.
摘要翻译：在半导体衬底中形成半绝缘部分的方法提供了将半导体衬底上的硬掩模膜沉积到足以防止带电粒子穿过硬掩模的厚度。硬掩模被图案化以产生开孔，在注入过程中带电粒子通过该开口进入衬底。半绝缘部分可以深深地延伸到半导体衬底中并且电绝缘形成在半绝缘部分的相对侧上的器件。带电粒子可以有利地是质子，并且由图案化的硬掩模膜覆盖的另外的基底部分基本上没有带电粒子。

17. 发明申请

US20090140285A1 LIGHT EMITTING DEVICE HAVING FUNCTION OF HEAT-DISSIPATION AND MANUFACTURING PROCESS FOR SUCH DEVICE 审中-公开
标题翻译：具有这种装置的散热功能和制造工艺的发光装置
公开(公告)号：US20090140285A1
公开(公告)日：2009-06-04
申请号：US12202439
申请日：2008-09-02
申请人： Shun-Tian Lin , Wen-Hsiang Chien , Wen-Chin Lin , Jyun-Wei Huang , Sin-Sian Wu
发明人： Shun-Tian Lin , Wen-Hsiang Chien , Wen-Chin Lin , Jyun-Wei Huang , Sin-Sian Wu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H05K3/32 , F21K9/233 , F21V7/22 , F21V29/505 , F21V29/745 , F21V29/767 , F21Y2115/10 , H01L33/642 , H01L2224/48091 , H01L2224/48247 , H05K3/4015 , H05K2201/10106 , H05K2201/10242 , H05K2201/10378 , H05K2201/10424 , H05K2201/10962 , H01L2924/00014
摘要： A light-emitting device of a light-emitting diode (LED) and a manufacture method thereof are provided. The light-emitting device includes a post-like metal material, a printed circuit board, conductors, insulators, light-emitting diodes, wires, and an encapsulating material. The light-emitting device has through holes, in which conductors are disposed and surrounded with the insulators. One end of each conductor is connected to the printed circuit board to form a composite structure heat-dissipation substrate. The light-emitting diodes are disposed on the post-like metal material, connected to the conductors via the wires, and encapsulated by the encapsulating material. Furthermore, the light-emitting diodes, the wires, and the encapsulating material can be combined into a light-emitting unit. Moreover, red, blue, and green light-emitting diodes can be combined and the color of output light thereof can be adjusted by controlling the input signal.
摘要翻译：提供了一种发光二极管（LED）的发光装置及其制造方法。发光装置包括柱状金属材料，印刷电路板，导体，绝缘体，发光二极管，导线和封装材料。发光装置具有通孔，其中导体被布置并被绝缘体包围。每个导体的一端连接到印刷电路板上以形成复合结构的散热基片。发光二极管设置在柱状金属材料上，经由导线连接到导体，并由封装材料封装。此外，发光二极管，导线和封装材料可以组合成发光单元。此外，可以组合红色，蓝色和绿色发光二极管，并且可以通过控制输入信号来调节其输出光的颜色。

18. 发明申请

US20080186757A1 Advanced MRAM design 有权
标题翻译：先进的MRAM设计
公开(公告)号：US20080186757A1
公开(公告)日：2008-08-07
申请号：US11743453
申请日：2007-05-02
申请人： Wen-Chin Lin , Hsu-Chen Cheng , Yu-Jen Wang , Denny Tang
发明人： Wen-Chin Lin , Hsu-Chen Cheng , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/005 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.
摘要翻译：这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元阵列中的至少一个的组合构成的集成电路存储器芯片。因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

19. 发明申请

US20070162736A1 ELECTRONIC DEVICE WITH ACCELERATED BOOT PROCESS AND METHOD FOR THE SAME 审中-公开
标题翻译：具有加速引导过程的电子设备及其相关方法
公开(公告)号：US20070162736A1
公开(公告)日：2007-07-12
申请号：US11462409
申请日：2006-08-04
申请人： Tung-Peng Wu , Wei-Te Hsu , Wen-Chin Lin
发明人： Tung-Peng Wu , Wei-Te Hsu , Wen-Chin Lin
IPC分类号： G06F15/177 , G06F9/00
CPC分类号： G06F9/4401
摘要： An electronic device with accelerated boot process and a method for the same are proposed. When the host of the electronic device is in the off mode or standby mode, users can input a normal boot signal or a fast boot signal to activate the host. The boot signal is encoded by an encoder for producing a corresponding code. The host determines whether the input signal is the normal boot signal or the fast boot signal according to the received code. If the received code is the normal boot signal, the host performs a normal boot process. If the received code is the fast boot signal, an instant launcher directly launches application programs specified in the fast boot signal and blocks the start of unnecessary application programs. The boot process of the electronic device can be effectively accelerated, and users can define several boot modes themselves to meet different requirements.
摘要翻译：提出了一种具有加速启动过程的电子设备及其方法。当电子设备的主机处于关闭模式或待机模式时，用户可以输入正常的引导信号或快速引导信号来激活主机。引导信号由用于产生相应代码的编码器编码。主机根据接收到的代码确定输入信号是正常引导信号还是快速启动信号。如果接收到的代码是正常引导信号，则主机执行正常引导过程。如果接收的代码是快速启动信号，即时启动器将直接启动在快速引导信号中指定的应用程序，并阻止不必要的应用程序的启动。电子设备的启动过程可以有效加速，用户可以自己定义几种启动模式，以满足不同的需求。

20. 发明申请

US20070096230A1 Magnetic memory cells and manufacturing methods 有权
标题翻译：磁记忆体和制造方法
公开(公告)号：US20070096230A1
公开(公告)日：2007-05-03
申请号：US11610760
申请日：2006-12-14
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L43/00 , H01L29/82
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
摘要翻译：改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。然后可以在掩模层和导电通孔上形成导电存储器线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式