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    • 11. 发明授权
    • Temperature stable semiconductor bulk acoustic resonator
    • 温度稳定的半导体体声波谐振器
    • US5283458A
    • 1994-02-01
    • US859768
    • 1992-03-30
    • Robert B. StokesKei-fung LauJames Chung-Kei Lau
    • Robert B. StokesKei-fung LauJames Chung-Kei Lau
    • H03H9/17H01L29/66
    • H03H9/172
    • This invention discloses a semiconductor bulk acoustic resonator including at least one thin film piezoelectric layer positioned on a semiconductor substrate. The acoustic resonator includes a heating ring positioned around the outer perimeter of the piezoelectric layer in order to heat the piezoelectric layer to a desirable elevated temperature. A heat sensing film fabricated on the piezoelectric layer monitors the temperature of the piezoelectric layer such that the heating ring maintains the piezoelectric layer at a constant temperature. By this, an oscillator circuit using this semiconductor bulk acoustic resonator as the frequency controlling element can maintain a constant frequency over a wide range of temperatures which may affect frequency stability.
    • 本发明公开了一种半导体体声波谐振器,其包括位于半导体衬底上的至少一个薄膜压电层。 声谐振器包括围绕压电层的外周定位的加热环,以便将压电层加热到期望的高温。 制造在压电层上的感热膜监测压电层的温度,使得加热环将压电层保持在恒定温度。 由此,使用该半导体体声波谐振器作为频率控制元件的振荡电路能够在可能影响频率稳定性的宽温度范围内保持恒定的频率。
    • 12. 发明授权
    • Parallel-to-serial signal processor using surface acoustic waves
    • 使用表面声波的并行到串行信号处理器
    • US4926146A
    • 1990-05-15
    • US161524
    • 1988-05-09
    • Kuo-Hsuing YenReynold S. KagiwadaRobert B. StokesMarshall Y. Huang
    • Kuo-Hsuing YenReynold S. KagiwadaRobert B. StokesMarshall Y. Huang
    • H03H9/02
    • H03H9/02976
    • A surface acoustic wave (SAW) device for converting multiple parallel signals to a smaller number of serial signals. The device includes a piezoelectric substrate and a surface acoustic wave (SAW) input transducer for propagating periodic surface acoustic waves across the substrate. The parallel signals are input to the device through an array of acoustic charge transport (ACT) input transducers, which convert the signals into packets of electrical charge that are transported across the device with the surface acoustic waves generated at the SAW input transducer. An ACT output transducer converts the charge packets back into electrical signals, but in serial rather than parallel form. The converter of the invention can be usefully combined with a SAW channelizer or spectrum analyzer, to provide serial outputs from the analyzer.
    • 一种用于将多个并行信号转换为较少数量的串行信号的表面声波(SAW)装置。 该装置包括压电基片和表面声波(SAW)输入换能器,用于在基片上传播周期性表面声波。 并行信号通过声电荷传输(ACT)输入传感器的阵列输入到器件,其将信号转换成跨过器件传输的电荷分组,并在SAW输入传感器处产生声表面波。 ACT输出传感器将电荷数据包转换成电信号,但是以串行方式而不是并行形式转换。 本发明的转换器可以有效地与SAW通道器或频谱分析仪组合,以提供来自分析仪的串行输出。
    • 14. 发明授权
    • MEMS millimeter wave switches
    • MEMS毫米波开关
    • US06873223B2
    • 2005-03-29
    • US10320926
    • 2002-12-16
    • Robert B. StokesAlvin M. Kong
    • Robert B. StokesAlvin M. Kong
    • B81B3/00H01H59/00H01P1/12H01P1/10
    • H01P1/10H01H59/0009H01P1/127
    • An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.
    • RF开关可用于毫米波频率和30 GHz及以上的更高频率。 本发明的四个实施例被配置为接地开关。 两个接地开关实施例被配置有平面空气桥。 这两个实施例都被配置为通过引入接地止动件来在传输线和地之间桥接长度被缩短。 另外两个接地开关实施例包括升高的金属跷跷板。 在这些实施例中,通过适当的跷跷板结构的尺寸和定位,缩短到地的路径被提供相对较低的电感。 最后,宽带电力开关实施例被配置为仅利用空气桥的一小部分来承载信号。 相对短的路径长度导致相对低的电感和电阻降低了开关的RF功率损耗,从而增加了开关的RF功率处理能力。
    • 16. 发明授权
    • Planar airbridge RF terminal MEMS switch
    • 平面飞桥RF终端MEMS开关
    • US06218911B1
    • 2001-04-17
    • US09352999
    • 1999-07-13
    • Alvin M. KongRobert B. StokesJoseph P. TrieuRahil U. BhoraniaMichael D. Lammert
    • Alvin M. KongRobert B. StokesJoseph P. TrieuRahil U. BhoraniaMichael D. Lammert
    • H01H5900
    • H01H59/0009H01H2001/0078H01H2059/0027
    • An RF switch and a process for fabricating an RF switch which includes multiple throws and can be fabricated utilizing only a single layer of metallization. The switch in accordance with the present invention includes an airbridge suspended beam disposed adjacent to one or more metal traces. One or more control pads are disposed adjacent to the airbridged suspended beam to operate the switch electrostatically. The suspended beam as well as the metal traces and contact pads are all fabricated with a single metallization layer. The switch is configured such that deflection of the beam is in a plane generally parallel to the plane of the substrate. By eliminating multiple metallization layers, the complexity for fabricating the switch is greatly reduced. Moreover, the switch configuration also allows multiple throws and multiple poles using a single level of metallization.
    • RF开关和用于制造RF开关的过程,其包括多个投掷并且可以仅使用单个金属化层制造。 根据本发明的开关包括邻近一个或多个金属迹线设置的空中悬臂梁。 一个或多个控制焊盘被布置成与节气门悬挂梁相邻,以静电地操作开关。 悬挂梁以及金属轨迹和接触垫都用单个金属化层制造。 开关被配置成使得光束的偏转在大致平行于衬底的平面的平面中。 通过消除多个金属化层,大大减少了用于制造开关的复杂性。 此外,开关配置还允许使用单个金属化级别的多个引线和多极。
    • 17. 发明授权
    • MEMS variable inductor and capacitor
    • MEMS可变电感器和电容器
    • US06856499B2
    • 2005-02-15
    • US10402032
    • 2003-03-28
    • Robert B. Stokes
    • Robert B. Stokes
    • H05K1/16H01F17/00H01F21/04H01G5/04H01G5/14H03H7/01H01G7/00
    • H01G5/14H01F17/0006H01F21/04H01F2007/068H01G5/18H03H7/0115H03H2007/008
    • A variable passive component is provided for fabrication on a microelectromechanical system (MEMS) device. A conductive portion is provided on a low-profile sliding dielectric sheet that cooperates with a conductive portion disposed on a substrate to provide a variable passive component. The passive component can be a variable inductor provided by moving a shorted spiral inductor formed on the dielectric sheet over a spiral inductor on the substrate with varying degrees of overlap causing varying inductance values. The passive component can be a variable capacitor that consists of a large conductive pad on a dielectric plate which slides over two adjacent pads on the substrate with varying overlap causing varying capacitance values.
    • 提供可变无源部件用于在微机电系统(MEMS)装置上制造。 导电部分设置在与设置在基板上的导电部分配合以提供可变无源部件的薄型滑动电介质片上。 无源部件可以是可变电感器,其通过将形成在电介质片上的短路螺旋电感器移动到衬底上的螺旋电感器上,并以不同程度的重叠使电感值变化而提供。 无源部件可以是可变电容器,其由电介质板上的大导电焊盘构成,其在基板上的两个相邻焊盘上滑动,具有变化的重叠,导致变化的电容值。
    • 18. 发明授权
    • Low frequency mechanical resonator
    • 低频机械谐振器
    • US5552655A
    • 1996-09-03
    • US450226
    • 1995-05-25
    • Robert B. StokesJay D. CushmanDrew Cushman
    • Robert B. StokesJay D. CushmanDrew Cushman
    • H03H9/05H03H9/17H03H9/58H01L41/08
    • H03H9/585H03H9/02228H03H9/588
    • A low frequency mechanical resonator that resonates at relatively low frequencies and can be fabricated as part of an integrated circuit. The resonator includes a piezoelectric structure having a top piezoelectric layer and a bottom piezoelectric layer positioned over a recessed area in a substrate. A top input electrode is positioned on the top surface of the top piezoelectric layer, a middle shield electrode is positioned between the piezoelectric layers, and a bottom output electrode is positioned on the bottom surface of the bottom piezoelectric layer adjacent the recessed area. By applying an appropriate alternating current to the top electrode, the top piezoelectric layer is alternately contracted and expanded. Because the top piezoelectric layer is secured to the bottom piezoelectric layer, the piezoelectric structure will flex up and down in order to relieve stress within the structure. The flexing of the piezoelectric structure causes flexural waves within the piezoelectric structure which resonate at a particular frequency depending on the membrane material, membrane thickness, and the width of the recessed area. The top and bottom electrodes can be replaced with interdigital transducers in order to select particular higher order flexural resonances for higher resonant frequencies.
    • 低频机械谐振器,其在较低频率下谐振并可作为集成电路的一部分制造。 谐振器包括具有位于衬底中的凹陷区域上方的顶部压电层和底部压电层的压电结构。 顶部输入电极位于顶部压电层的顶表面上,中间屏蔽电极位于压电层之间,底部输出电极位于邻近凹陷区域的底部压电层的底表面上。 通过向顶部电极施加适当的交流电,顶部压电层交替地收缩和膨胀。 因为顶部压电层被固定到底部压电层,所以压电结构将上下弯曲以减轻结构内的应力。 压电结构的弯曲会导致压电结构内的弯曲波,其根据膜材料,膜厚度和凹陷区域的宽度以特定频率共振。 顶部和底部电极可以用叉指式换能器代替,以便为更高的谐振频率选择特定的较高阶弯曲谐振。
    • 19. 发明授权
    • Monolithic multipole filters made of thin film stacked crystal filters
    • 由薄膜堆叠晶体滤波器制成的单片多极滤波器
    • US5382930A
    • 1995-01-17
    • US993575
    • 1992-12-21
    • Robert B. StokesEdward M. GarberJay D. CrawfordDrew Cushman
    • Robert B. StokesEdward M. GarberJay D. CrawfordDrew Cushman
    • H03H3/04H03H9/56H03H9/58
    • H03H9/588H03H3/04H03H9/585
    • This invention discloses a monolithic multipole stacked crystal filter comprised of a series of cascaded 2-port semiconductor bulk acoustic resonator stacked crystal filters electrically cascaded and a shunt inductor connected between each of the 2-port filters. Each of the 2-port filters including a first and second piezoelectric layer, typically aluminum nitride. A first input electrode is positioned on a top surface of one of the piezoelectric layers and a second output electrode is positioned on a bottom surface of the other of the piezoelectric layers. A ground electrode is positioned between the piezoelectric layers. In this regard, the piezoelectric layers will resonate at a resonant frequency and provide bandpass filter characteristics. The complete monolithic multipole filter provides control of the passband shape which yields highly desirable filter characteristics.
    • 本发明公开了一种单片多极叠层晶体滤波器,由一系列级联的2端口半导体体声波谐振器和级联的层叠晶体滤波器以及连接在每个2端口滤波器之间的并联电感器组成。 每个2端口滤波器包括第一和第二压电层,通常为氮化铝。 第一输入电极位于压电层之一的顶表面上,第二输出电极位于另一个压电层的底表面上。 接地电极位于压电层之间。 在这方面,压电层将以谐振频率谐振并提供带通滤波器特性。 完整的单片多极滤波器提供对通带形状的控制,其产生非常期望的滤波器特性。