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    • 12. 发明授权
    • Plasma display panel
    • 等离子显示面板
    • US07501759B2
    • 2009-03-10
    • US11298595
    • 2005-12-12
    • Seong-Hoon HanYoung-Cheul KangYoon-Soo HanJung-Hwan ParkDong-Min Kim
    • Seong-Hoon HanYoung-Cheul KangYoon-Soo HanJung-Hwan ParkDong-Min Kim
    • H01J17/49
    • H01J11/12H01J11/36H01J2211/368
    • A plasma display panel including a front substrate, a rear substrate, a display area, a non-display area including a dummy region, and a plurality of rib members is provided. The dummy region includes a first barrier rib region extending along a first direction and including portions of at least some of the plurality of barrier rib members, a second barrier rib region extending along a second direction and including portions of at least some of the plurality of barrier rib members, and at least one sector region. The sector region includes at least one sector barrier rib member extending along a direction other than the first direction and the second direction and connecting at least one portion of at least one of the barrier rib portions in the first barrier rib region to at least one of the barrier rib portions in the second barrier rib region.
    • 提供了包括前基板,后基板,显示区域,包括虚拟区域的非显示区域和多个肋构件的等离子体显示面板。 虚拟区域包括沿着第一方向延伸并且包括多个隔壁构件中的至少一些的第一阻挡肋区域,第二阻挡肋区域沿着第二方向延伸并且包括多个阻挡肋构件中的至少一些的部分 隔离肋构件和至少一个扇区区域。 扇形区域包括至少一个沿第一方向和第二方向以外的方向延伸的扇形障壁构件,并且将第一隔壁区域中的至少一个障壁部分的至少一部分连接到第一隔壁区域中的至少一个 第二隔壁区域中的隔壁部分。
    • 13. 发明授权
    • Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same
    • 具有虚拟读出放大器的半导体存储器件及其利用方法
    • US08102689B2
    • 2012-01-24
    • US12687971
    • 2010-01-15
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • G11C5/02
    • G11C11/4091G11C11/4097
    • A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
    • 提供了具有虚拟读出放大器的半导体存储器件及其利用方法。 半导体存储器件的实施例可以包括至少一个虚设单元块,其包括虚设单元和存储单元。 在第一方向连接虚拟单元块中的存储单元的正常位线和在第一方向上连接虚设单元的虚拟位线。 还包括虚拟读出放大器,用于连接任何两个正常位线和虚拟位线。 一些实施例可以改善感测虚拟单元中的存储器单元的感测容限和刷新余量,以及提高冗余效率和虚拟单元的利用。
    • 17. 发明授权
    • Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same
    • 具有虚拟读出放大器的半导体存储器件及其利用方法
    • US07649760B2
    • 2010-01-19
    • US11465304
    • 2006-08-17
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • G11C5/02
    • G11C11/4091G11C11/4097
    • A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
    • 提供了具有虚拟读出放大器的半导体存储器件及其利用方法。 半导体存储器件的实施例可以包括至少一个虚设单元块,其包括虚设单元和存储单元。 在第一方向连接虚拟单元块中的存储单元的正常位线和在第一方向上连接虚设单元的虚拟位线。 还包括虚拟读出放大器,用于连接任何两个正常位线和虚拟位线。 一些实施例可以改善感测虚拟单元中的存储器单元的感测容限和刷新余量,以及提高冗余效率和虚拟单元的利用。