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11. 发明申请

US20120006265A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20120006265A1
公开(公告)日：2012-01-12
申请号：US13235855
申请日：2011-09-19
申请人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

12. 发明授权

US08668776B2 Gas delivery apparatus and method for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US08668776B2
公开(公告)日：2014-03-11
申请号：US12797999
申请日：2010-06-10
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

13. 发明授权

US07780788B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07780788B2
公开(公告)日：2010-08-24
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

14. 发明申请

US20090151633A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 有权
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：US20090151633A1
公开(公告)日：2009-06-18
申请号：US12371138
申请日：2009-02-13
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
摘要翻译：本文描述的实施例涉及用于产生半导体处理系统的前体的装置。在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

15. 发明授权

US07494908B2 Apparatus for integration of barrier layer and seed layer 有权
标题翻译：用于整合势垒层和种子层的装置
公开(公告)号：US07494908B2
公开(公告)日：2009-02-24
申请号：US11749064
申请日：2007-05-15
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L21/3205
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

16. 发明申请

US20080274299A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20080274299A1
公开(公告)日：2008-11-06
申请号：US12172092
申请日：2008-07-11
申请人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳衬底支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

17. 发明授权

US07422637B2 Processing chamber configured for uniform gas flow 失效
标题翻译：处理室配置为均匀气流
公开(公告)号：US07422637B2
公开(公告)日：2008-09-09
申请号：US11552727
申请日：2006-10-25
申请人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
发明人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/4412 , C23C16/45521 , C23C16/4585
摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
摘要翻译：提供了一种在处理室中进行均匀气体流动的装置和方法。在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。盖子设置在室主体上并且与其限定内部容积。衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。流量控制孔布置在基板支撑件和盖子之间。流量控制孔适于控制离开处理区域的气体流。

18. 发明授权

US07270709B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US07270709B2
公开(公告)日：2007-09-18
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

19. 发明授权

US07244683B2 Integration of ALD/CVD barriers with porous low k materials 有权
标题翻译： ALD / CVD屏障与多孔低k材料的集成
公开(公告)号：US07244683B2
公开(公告)日：2007-07-17
申请号：US10741422
申请日：2003-12-19
申请人： Hua Chung , Nikolaos Bekiaris , Christophe Marcadal , Ling Chen
发明人： Hua Chung , Nikolaos Bekiaris , Christophe Marcadal , Ling Chen
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/02063 , H01L21/28556 , H01L21/28562 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L21/76873 , H01L21/76876
摘要： A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.
摘要翻译：提供了一种处理衬底的方法。该方法包括沉积和蚀刻基底上的低k电介质层，用等离子体预清洁衬底，以及在衬底上沉积阻挡层。预清洁衬底使阻挡层向低k电介质层的扩散最小化和/或增强阻挡层的沉积。

20. 发明申请

US20070067609A1 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US20070067609A1
公开(公告)日：2007-03-22
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： G06F15/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

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