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11. 发明授权

US07507630B2 Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07507630B2
公开(公告)日：2009-03-24
申请号：US11299907
申请日：2005-12-13
申请人： Masanobu Tsuchitani , Hitoshi Shinohara , Keiko Kawamura
发明人： Masanobu Tsuchitani , Hitoshi Shinohara , Keiko Kawamura
IPC分类号： H01L21/336
CPC分类号： H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： A method of fabricating a semiconductor device includes: forming an insulating film on a semiconductor body to cover a termination area surrounding a cell area; forming a mask material film to cover the cell area and the insulating film; forming a resist film to cover the mask material film; patterning the resist film to have an opening serving as a gate-use resist pattern above the cell area and another opening serving as a dummy resist pattern above the insulating film; selectively etching the mask material film by use of the patterned resist film as a mask so that the insulating film is remained under the dummy resist pattern; selectively etching the semiconductor body by use of the patterned mask material film as another mask to form a trench in the cell area as corresponding to the gate-use resist pattern; and burying gate material in the trench to form the trench gate.
摘要翻译：制造半导体器件的方法包括：在半导体本体上形成绝缘膜以覆盖围绕单元区域的端接区域; 形成掩模材料膜以覆盖单元区域和绝缘膜; 形成抗蚀剂膜以覆盖掩模材料膜; 将抗蚀剂膜图案化成在单元区域之上具有用作栅极用途抗蚀剂图案的开口，并且在绝缘膜上方具有用作模拟抗蚀剂图案的另一开口; 通过使用图案化的抗蚀剂膜作为掩模来选择性地蚀刻掩模材料膜，使得绝缘膜保持在假抗蚀剂图案下方; 通过使用图案化掩模材料膜作为另一掩模来选择性地蚀刻半导体本体，以在对应于栅极使用抗蚀剂图案的单元区域中形成沟槽; 并将栅极材料埋入沟槽中以形成沟槽栅极。

12. 发明申请

US20130272895A1 IMPELLER, ROTOR COMPRISING SAME, AND IMPELLER MANUFACTURING METHOD 有权
标题翻译：叶轮，包括它的转子和叶轮制造方法
公开(公告)号：US20130272895A1
公开(公告)日：2013-10-17
申请号：US13976108
申请日：2012-02-17
申请人： Akihiro Nakaniwa , Hitoshi Shinohara
发明人： Akihiro Nakaniwa , Hitoshi Shinohara
IPC分类号： F01D5/14 , F04D29/28
CPC分类号： F01D5/14 , B23P15/006 , F04D29/266 , F04D29/284 , F04D29/624 , F05B2230/23 , Y10T29/49316
摘要： An impeller is formed of two parts, i.e., an inner peripheral side part and an outer peripheral side part. The inner peripheral side part is molded in a cylindrical shape. The outer peripheral side part is formed by integrally molding an annular disc externally fitted to an outer peripheral surface of the inner peripheral side part, a plurality of blades provided at an interval in a circumferential direction on a surface that faces the other side in the axis line direction of the annular disc and forming al flow path extending in a radial direction, and a cover covering the plurality of blades from the other side in the axis line direction and having an insertion hole to which the inner peripheral side part is inserted in the axis line direction at an interval in a radial direction.
摘要翻译：叶轮由两部分构成，即内周侧部分和外周侧部分。内周侧部成型为圆筒状。外周侧部通过一体地成形外周嵌合于内周侧部的外周面的环状盘而形成，多个叶片沿圆周方向间隔设置在与轴线相对的另一侧的面环形盘的线方向和形成沿径向延伸的流路，以及从轴线方向上的另一侧覆盖多个叶片的盖，并且具有插入孔，内周侧部分插入到该插入孔中轴线方向。

13. 发明申请

US20120061747A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120061747A1
公开(公告)日：2012-03-15
申请号：US13052917
申请日：2011-03-21
申请人： Takeshi UCHIHARA , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
发明人： Takeshi UCHIHARA , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/088 , H01L29/0626 , H01L29/0696 , H01L29/0886 , H01L29/1095 , H01L29/4238 , H01L29/66734 , H01L29/7808
摘要： According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的漂移区域，第二导电类型的基极区域，第一导电类型的源极区域，沟槽形状的栅电极，第二导电类型的接触区域导电类型，漏电极和源电极。漂移区选择性地设置在从漏层的表面到漏层的内部的第一导电类型的漏极层中。基极区域选择性地设置在漂移区域中，从漂移区域的表面到漂移区域的内部。源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域，以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。接触区选择性地设置在漂移区的表面上。接触区域含有浓度高于碱性区域的杂质浓度的杂质。漏电极连接到漏极层。源电极连接到源极区域和接触区域。接触区域从漏极层的侧面朝向漂移区域延伸，并且不接触漏极层。

14. 发明申请

US20100200354A1 TAPERED COUPLING STRUCTURE AND ROTATING MACHINE 有权
标题翻译：接头联轴器和旋转机
公开(公告)号：US20100200354A1
公开(公告)日：2010-08-12
申请号：US12507883
申请日：2009-07-23
申请人： Katsuki Yagi , Hiroki Terado , Eiichi Yanagisawa , Hitoshi Shinohara
发明人： Katsuki Yagi , Hiroki Terado , Eiichi Yanagisawa , Hitoshi Shinohara
IPC分类号： F16D11/04
CPC分类号： F16D1/092 , F16D2001/0906 , Y10T403/1633
摘要： There is provided a tapered coupling structure in which a tapered shaft can be coupled to and decoupled from a hub without the use of an O-ring. In a tapered coupling structure 10 in which a tapered shaft 20 and a hub 30 are coupled to each other, the tapered shaft 20 is provided with a taper part 21 on the side of being coupled to the hub 30, and the hub 30 is provided with a high-rigidity part 32 having a thickness in the radial direction larger than that of other regions and having a high rigidity in the radial direction. An oil groove 24 formed in the outer peripheral surface of the taper part 21 to feed oil to the coupling surfaces of the taper part 21 and the hub 3 is provided in a region corresponding to the high-rigidity part 32 in the axial direction.
摘要翻译：提供了一种锥形联接结构，其中锥形轴可以联接到毂而不使用O形环而与毂脱离。在其中锥形轴20和轮毂30彼此联接的锥形联接结构10中，锥形轴20在联接到轮毂30的一侧上设置有锥形部21，并且设置轮毂30 其高度刚性部32的径向厚度大于其他区域的厚度，并且在径向上具有高刚性。形成在锥形部21的外周面上的用于将油供给到锥形部21和轮毂3的联接面的油槽24设置在与高刚性部32相对应的轴向的区域。

15. 发明申请

US20060160320A1 Method of fabricating a semiconductor device 失效
公开(公告)号：US20060160320A1
公开(公告)日：2006-07-20
申请号：US11299907
申请日：2005-12-13
申请人： Masanobu Tsuchitani , Hitoshi Shinohara , Keiko Kawamura
发明人： Masanobu Tsuchitani , Hitoshi Shinohara , Keiko Kawamura
IPC分类号： H01L21/76
CPC分类号： H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： A method of fabricating a semiconductor device includes: forming an insulating film on a semiconductor body to cover a termination area surrounding a cell area; forming a mask material film to cover the cell area and the insulating film; forming a resist film to cover the mask material film; patterning the resist film to have an opening serving as a gate-use resist pattern above the cell area and another opening serving as a dummy resist pattern above the insulating film; selectively etching the mask material film by use of the patterned resist film as a mask so that the insulating film is remained under the dummy resist pattern; selectively etching the semiconductor body by use of the patterned mask material film as another mask to form a trench in the cell area as corresponding to the gate-use resist pattern; and burying gate material in the trench to form the trench gate.

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