专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20050186725A1 Method for manufacturing solar battery 有权
公开(公告)号：US20050186725A1
公开(公告)日：2005-08-25
申请号：US11033380
申请日：2005-01-12
申请人： Hiroki Adachi , Kazuo Nishi , Masato Yonezawa , Yukihiro Isobe , Hisato Shinohara
发明人： Hiroki Adachi , Kazuo Nishi , Masato Yonezawa , Yukihiro Isobe , Hisato Shinohara
IPC分类号： H01L31/04 , H01L21/77 , H01L21/8238 , H01L31/00 , H01L31/042 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/035281 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.

12. 发明申请

US20050061246A1 Conveyor device and film formation apparatus for a flexible substrate 有权
公开(公告)号：US20050061246A1
公开(公告)日：2005-03-24
申请号：US10981582
申请日：2004-11-05
申请人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
发明人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
IPC分类号： C23C16/505 , C23C16/00 , C23C16/54 , H01L21/205 , H01L21/677 , H01L31/04
CPC分类号： C23C16/545
摘要： With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.

13. 发明授权

US08216648B2 Film formation method and apparatus 有权
标题翻译：成膜方法和装置
公开(公告)号：US08216648B2
公开(公告)日：2012-07-10
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/34
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译：成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和第二供给步骤多次以在目标物体上形成氮化硅膜。第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。

14. 发明申请

US20110053310A1 PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US20110053310A1
公开(公告)日：2011-03-03
申请号：US12989098
申请日：2008-04-30
申请人： Masato Yonezawa , Kimikazu Hazumi , Akihiro Takami , Hiroaki Morikawa , Kunihiko Nishimura
发明人： Masato Yonezawa , Kimikazu Hazumi , Akihiro Takami , Hiroaki Morikawa , Kunihiko Nishimura
IPC分类号： H01L31/0352
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03529 , H01L31/068 , Y02E10/547
摘要： The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.
摘要翻译：该制造方法包括：在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜，在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部，以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。

15. 发明授权

US07510901B2 Conveyor device and film formation apparatus for a flexible substrate 有权
标题翻译：用于柔性基底的输送装置和成膜装置
公开(公告)号：US07510901B2
公开(公告)日：2009-03-31
申请号：US11157925
申请日：2005-06-22
申请人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
发明人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
IPC分类号： H01L21/00
CPC分类号： C23C16/545
摘要： With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.
摘要翻译：采用常规的圆筒罐法，用作成膜接地电极的区域是圆筒形罐的一部分，并且设备的尺寸与电极的表面积成比例变大。本发明提供一种具有输送装置的输送装置和成膜装置，其具有从一端向另一端连续输送柔性基板的单元，其特征在于，在一端并且另一端沿着具有半径R的圆弧，所述圆柱滚子被布置成使得它们的中心轴彼此平行地延伸;以及用于在所述基板与所述多个圆柱体中的每一个接触的同时传送所述柔性基板的机构提供滚筒。

16. 发明授权

US07384828B2 Semiconductor film, semiconductor device and method of their production 有权
标题翻译：半导体薄膜，半导体器件及其制作方法
公开(公告)号：US07384828B2
公开(公告)日：2008-06-10
申请号：US10835072
申请日：2004-04-30
申请人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
发明人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
IPC分类号： H01L21/84
CPC分类号： H01L29/78636 , C23C16/0272 , C23C16/24 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/3221 , H01L29/66757 , H01L29/78621
摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
摘要翻译：通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜，高浓度的稀有气体元素或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3 3，并含有浓度为1×10 15 / cm 3至1×10 17 / cm 3以上的氟 >。

17. 发明申请

US20050020037A1 Semiconductor film, semiconductor device and method of their production 有权
标题翻译：半导体薄膜，半导体器件及其制作方法
公开(公告)号：US20050020037A1
公开(公告)日：2005-01-27
申请号：US10835072
申请日：2004-04-30
申请人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
发明人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
IPC分类号： H01L21/205 , C23C16/02 , C23C16/24 , C30B1/02 , H01L21/20 , H01L21/322 , H01L21/336 , H01L29/786
CPC分类号： H01L29/78636 , C23C16/0272 , C23C16/24 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/3221 , H01L29/66757 , H01L29/78621
摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
摘要翻译：通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜，高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

18. 发明授权

US06743700B2 Semiconductor film, semiconductor device and method of their production 失效
标题翻译：半导体薄膜，半导体器件及其制作方法
公开(公告)号：US06743700B2
公开(公告)日：2004-06-01
申请号：US10155986
申请日：2002-05-29
申请人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
发明人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
IPC分类号： H01L21322
CPC分类号： H01L29/78636 , C23C16/0272 , C23C16/24 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/3221 , H01L29/66757 , H01L29/78621
摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
摘要翻译：通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜，高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

19. 发明授权

US06620288B2 Substrate treatment apparatus 有权
公开(公告)号：US06620288B2
公开(公告)日：2003-09-16
申请号：US09812327
申请日：2001-03-19
申请人： Hisato Shinohara , Naoto Kusumoto , Masato Yonezawa
发明人： Hisato Shinohara , Naoto Kusumoto , Masato Yonezawa
IPC分类号： H01L21306
CPC分类号： H01L21/67017 , C23C14/562 , C23C16/545 , H01J37/32458 , H01J37/34
摘要： In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

20. 发明授权

US06444506B1 Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation 失效
标题翻译：在氢气混合气体中使用激光退火然后氮化物形成的硅薄膜器件的制造方法
公开(公告)号：US06444506B1
公开(公告)日：2002-09-03
申请号：US08735680
申请日：1996-10-23
申请人： Naoto Kusumoto , Toru Takayama , Masato Yonezawa
发明人： Naoto Kusumoto , Toru Takayama , Masato Yonezawa
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02672 , H01L21/02691 , H01L21/2026 , H01L21/67739 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A crystalline silicon film is obtained by laser-annealing a non-single-crystal silicon film by illuminating it with a laser beam in a hydrogen-inclusive atmosphere. Further, the above laser annealing step and a step of forming an insulating film to become a gate insulating film are performed consecutively. As a result, hydrogen is effectively confined in a channel forming region and the boundary between the channel forming region and the gate insulating film is given superior characteristics, which lead to proper threshold voltage control, a reduction in S-value, and an increase in mobility. The hydrogen confinement can be made more effective by employing a silicon nitride film or a multi-layer film including a silicon nitride film as the insulating film to become the gate insulating film.
摘要翻译：通过在包含氢的气氛中用激光束照射非单晶硅膜来获得晶体硅膜。此外，连续执行上述激光退火步骤和形成绝缘膜以成为栅极绝缘膜的步骤。结果，氢被有效地限制在沟道形成区域中，并且沟道形成区域和栅极绝缘膜之间的边界被赋予优异的特性，这导致适当的阈值电压控制，S值的降低和增加流动性通过使用氮化硅膜或包含氮化硅膜作为绝缘膜的多层膜来形成栅极绝缘膜，可以使氢限制更有效。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式