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11. 发明授权

US06703665B1 Transistor 失效
标题翻译：晶体管
公开(公告)号：US06703665B1
公开(公告)日：2004-03-09
申请号：US09639811
申请日：2000-08-17
申请人： Hideyuki Nakamura
发明人： Hideyuki Nakamura
IPC分类号： H01L2974
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/42372 , H01L29/66712 , H01L29/7395 , H01L29/7809
摘要： A withstand voltage region of a second conductivity type is formed in a drain layer of a first conductivity type in a semiconductor substrate, and a conductive region of the first conductivity type is partly formed in the withstand voltage region by being diffused from the surface of the withstand voltage region. The conductive region has a bottom held in contact with the drain layer. A base region and a source region are formed in the surface of semiconductor substrate, with a region between the source region and the conductive region serving as a channel region, thus producing a transistor. When a voltage is applied to a gate electrode film on the channel region to form an inverted layer, the source region and the drain layer are connected to each other by the inverted layer and the conductive region.
摘要翻译：第二导电类型的耐电压区域形成在半导体衬底中的第一导电类型的漏极层中，并且第一导电类型的导电区域通过从耐蚀电压区域的表面扩散而部分地形成在耐电压区域中耐电压区域。导电区域具有与漏极层保持接触的底部。在半导体衬底的表面中形成基极区域和源极区域，源极区域和导电区域之间的区域用作沟道区域，从而产生晶体管。当在沟道区上施加电压到栅电极膜以形成反转层时，源区和漏层通过反相层和导电区相互连接。

12. 发明授权

US06703087B1 Thermal transfer material and image forming material using the same 失效
标题翻译：热转印材料和使用其的成像材料
公开(公告)号：US06703087B1
公开(公告)日：2004-03-09
申请号：US09598512
申请日：2000-06-21
申请人： Kazuhito Miyake , Hideyuki Nakamura , Akira Hatakeyama
发明人： Kazuhito Miyake , Hideyuki Nakamura , Akira Hatakeyama
IPC分类号： B41M530
CPC分类号： B41M5/395
摘要： It is an object of the present invention to provide a thermal transfer material which has an image forming layer of low fusible viscosity, which has an excellent transferring sensitivity, which is able to form a high quality image, and in which leakage of a thermally fusible substance is not caused so that there is hardly any contamination of hardware such as an image forming device by the thermally fusible substance. Such an object is accomplished by providing a thermal transfer material having a support, and on the support, an image forming layer which contains a pigment, at least one thermally fusible substance, and at least one resin, in which given that a weight ratio of one thermally fusible substance i to one resin j is bij (weight of the thermally fusible substance i/weight of the resin j), and an absolute value of a difference between solubility parameter (SP) values of the thermally fusible substance i and the resin j is aij (absolute value of (SP value of the thermally fusible substance i)−(SP value of the resin j)), then bij
摘要翻译：本发明的目的是提供一种热转印材料，其具有低易熔粘度的图像形成层，其具有优异的转印灵敏度，其能够形成高质量图像，并且其中热熔体不会引起物质，使得几乎不会受到热熔性物质的成像装置等硬件的污染。这样的目的是通过提供一种具有支撑体的热转印材料，并且在支撑体上，形成含有颜料，至少一种热熔性物质和至少一种树脂的图像形成层，其中给定重量比一种热熔性物质i与一种树脂j是Bij（热熔体i的重量/树脂j的重量），热熔性物质i和树脂的溶解度参数（SP）值之差的绝对值 j是aij（热熔物质i的SP值（树脂j的SP值）的绝对值），则bij <（0.03 / Aij）。

13. 发明授权

US06668348B1 Memory-mounting integrated circuit and test method thereof 失效
标题翻译：内存安装集成电路及其测试方法
公开(公告)号：US06668348B1
公开(公告)日：2003-12-23
申请号：US09618824
申请日：2000-07-18
申请人： Hideyuki Nakamura
发明人： Hideyuki Nakamura
IPC分类号： G01R3128
CPC分类号： G01R31/3187 , G11C29/12 , G11C2029/0405
摘要： To provide such a memory-mounting integrated circuit as well as a memory test method that can reduce costs to incur for a tester, regulate the number of the input-output terminals for testing, and nevertheless can monitor from outside all the contents of defects in principle. The memory-mounting integrated circuit on which at least a BIST circuit and a memory are mounted, in which the above described BIST circuit includes a data storing apparatus to store the data in a normal memory, a comparing apparatus to compare a memory test result signal from the above described memory with data from the above described data storing apparatus to output a first comparing signal, a control apparatus to control to implement outputting outward from the first comparing signal outputted by the above described comparing apparatus, and an output apparatus to output defective data outward by the above described control apparatus.
摘要翻译：为了提供这种存储器安装集成电路以及可以降低测试者的成本的存储器测试方法，调节用于测试的输入 - 输出端子的数量，并且可以从外部监视所有缺陷内容原理。至少安装了BIST电路和存储器的存储器安装集成电路，其中上述BIST电路包括用于将数据存储在正常存储器中的数据存储装置，比较装置，用于比较存储器测试结果信号从上述存储器中读取来自上述数据存储装置的数据以输出第一比较信号，控制装置，用于执行从上述比较装置输出的第一比较信号向外输出的控制装置，以及输出缺陷的输出装置数据由上述控制装置向外。

14. 发明授权

US06599641B1 Structural body formed by friction stir welding of hollow extruded frame members 失效
标题翻译：通过中空挤压框架构件的摩擦搅拌焊接形成的结构体
公开(公告)号：US06599641B1
公开(公告)日：2003-07-29
申请号：US09716371
申请日：2000-11-21
申请人： Hideyuki Nakamura , Takeshi Kawasaki , Toshiaki Makino , Yoshihiko Ina
发明人： Hideyuki Nakamura , Takeshi Kawasaki , Toshiaki Makino , Yoshihiko Ina
IPC分类号： B32B330
CPC分类号： B23K20/122 , B23K2101/045 , Y10T428/1234 , Y10T428/12375 , Y10T428/12382
摘要： End portions of face plates 21 and 22 of a hollow extruded frame member 20 are connected with a rib 24 and these end portions are welded to end portions of face plates 11 and 12 of a hollow extruded frame member 10 using friction stir welding. A visible outline of a connection portion of the end portion of the face plate 21 and the rib 24 is constituted by circular arcs 31 and 32 which are recessed in the hollow extruded frame member 20. A visible outline of a connection portion of the end portion of the face plate 22 and the rib 24 is constituted by circular arcs 33 and 34 which are recessed in the hollow extruded frame member 20. The diameter of the circular arc 31 (33) is smaller than the diameter of the circular arc 32 (34). Accordingly, a structural body having a light weight structure can be obtained.
摘要翻译：中空挤压框架构件20的面板21和22的端部与肋24连接，并且使用摩擦搅拌焊将这些端部焊接到中空挤压框架构件10的面板11和12的端部。面板21和肋24的端部的连接部分的可见轮廓由凹入在中空挤压框架构件20中的圆弧31和32构成。端部的连接部分的可视轮廓面板22和肋24由凹陷在中空挤压框架构件20中的圆弧33和34构成。圆弧31（33）的直径小于圆弧32（34）的直径）。因此，可以获得具有轻质结构的结构体。

15. 发明授权

US06568872B2 Connection member for friction stir welding 失效
标题翻译：摩擦搅拌焊接接头
公开(公告)号：US06568872B2
公开(公告)日：2003-05-27
申请号：US09785481
申请日：2001-02-20
申请人： Takeshi Kawasaki , Toshiaki Sagawa , Hideyuki Nakamura
发明人： Takeshi Kawasaki , Toshiaki Sagawa , Hideyuki Nakamura
IPC分类号： B23K2012
CPC分类号： B23K33/00 , B23K20/122 , B23K2101/006 , B23K2101/045 , Y10T403/477 , Y10T403/478 , Y10T428/12
摘要： An abutted portion of face plates (12b and 22b) of hollow frame members (10 and 20) is carried out according to a friction stir joining. Next, a connection member (30) is mounted, one end of the connection member (30) is abutted to an end portion of the face plate (11) of the hollow frame member (10). Under this condition, the abutted portion between the face plate (11) and the connection member (30) is carried out according to the friction stir joining. An overlapping portion between another end of the connection member (30) and the hollow frame member (20) is carried out according to the friction stir joining. According to demands, the connection member (30) and the face plate (21) of the hollow member (20) are welded. Without of regard of a dimension accuracy of the hollow frame member and the like, a good joining from one side face of the hollow frame member can be carried out.
摘要翻译：根据摩擦搅拌接合来执行中空框架构件（10和20）的面板（12b和22b）的邻接部分。接下来，安装连接构件（30），连接构件（30）的一端与中空框架构件（10）的面板（11）的端部抵接。在这种情况下，面板（11）和连接部件（30）之间的抵接部分根据摩擦搅拌接合进行。根据摩擦搅拌接合来进行连接构件（30）的另一端与中空框架构件（20）的重叠部分。根据需要，中空构件（20）的连接构件（30）和面板（21）被焊接。不考虑中空框架构件等的尺寸精度，可以进行从中空框架构件的一个侧面的良好接合。

16. 发明授权

US06563169B1 Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer 有权
标题翻译：具有高耐压的半导体器件和具有可通过反相层连接到扩散源极层的高导电性区域的漏极层
公开(公告)号：US06563169B1
公开(公告)日：2003-05-13
申请号：US09367599
申请日：1999-08-18
申请人： Nobuki Miyakoshi , Masanori Fukui , Hideyuki Nakamura
发明人： Nobuki Miyakoshi , Masanori Fukui , Hideyuki Nakamura
IPC分类号： H01L2976
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/7809 , H01L29/7811
摘要： A highly conductive region 18 serving as a surface of a drain layer 2 of a first conductivity type is diffused more deeply than a main diffused layer 36 and a diffused channel layer 37, and has a small conducting resistance. The highly conductive region 18 is surrounded by a diffused region 40 of a second conductivity type which comprises a diffused base layer 38 and a diffused guard ring layer 13. Therefore, the highly conductive region 18 does not form spherical junctions, and a depletion layer spreading in the highly conductive region 18 extends into the highly conductive region 18. The highly conductive region 18 thus has a high withstand voltage while maintaining the low conducting resistance.
摘要翻译：用作第一导电类型的漏极层2的表面的高导电性区域18比主扩散层36和扩散沟道层37更深地扩散，并且具有小的导电电阻。高导电区域18由第二导电类型的扩散区域40包围，该扩散区域40包括扩散的基极层38和扩散的保护环层13.因此，高导电区域18不形成球形结，耗散层扩展在高导电区域18中延伸到高导电区域18.因此，高导电区域18具有高耐受电压，同时保持低导电电阻。

17. 发明授权

US06367273B2 Refrigerator 失效
标题翻译：冰箱
公开(公告)号：US06367273B2
公开(公告)日：2002-04-09
申请号：US09833556
申请日：2001-04-13
申请人： Junichi Takagi , Makoto Ishii , Noriaki Arakawa , Takeshi Wakatabe , Hideki Yoshida , Hideyuki Nakamura , Hideo Kumakura
发明人： Junichi Takagi , Makoto Ishii , Noriaki Arakawa , Takeshi Wakatabe , Hideki Yoshida , Hideyuki Nakamura , Hideo Kumakura
IPC分类号： F25B4902
CPC分类号： F25B49/025 , F25B2600/021 , F25D2400/30 , Y02B30/741
摘要： A refrigerator, having a motor for driving a compressor, an inverter for controlling the operation of the motor, a converter responsive to AC to perform a boosting function to supply DC of variable voltage to the inverter, converter control means for controlling the converter so that a plurality of DC voltages are outputted thereby and inverter control means for controlling the inverter in pulse width modulation each of the plurality of voltages. The lowest voltage among the plurality of voltages being a voltage which turns off the boosting function of the converter.
摘要翻译：一种具有用于驱动压缩机的电动机，用于控制电动机的操作的逆变器的逆变器，响应于AC的转换器，以执行升压功能以向逆变器提供可变电压的DC，转换器控制装置，用于控制转换器，使得输出多个直流电压，逆变器控制装置用于以多个电压的脉冲宽度调制控制逆变器。多个电压中的最低电压是切断转换器的升压功能的电压。

18. 发明申请

US20120011913A1 ROLL FORMER FOR STEEL PLATE AND ROLL BENDING METHOD FOR STEEL PLATE USING SAME 有权
标题翻译：用于钢板的轧制辊和用于使用它的钢板的轧制弯曲方法
公开(公告)号：US20120011913A1
公开(公告)日：2012-01-19
申请号：US13138016
申请日：2009-12-25
申请人： Keinosuke Iguchi , Hideyuki Nakamura
发明人： Keinosuke Iguchi , Hideyuki Nakamura
IPC分类号： B21B1/00
CPC分类号： B21D5/08 , B21D5/12
摘要： A roll former for steel plate (3) which enables buckling of steel plate edges (4) to be avoided, that is, a roll former for steel plate comprised of a top roll (1) and a bottom roll (2), the roll former for steel plate characterized by forming convex curved parts (5) having a bending direction opposite to a bending direction of the steel plate (3) in regions of the bottom roll (2), which forms the outer side of the steel plate (3), which contact the steel plate edges (4).
摘要翻译：一种用于钢板（3）的轧辊成型机，其能够避免钢板边缘（4）的屈曲，即，由顶辊（1）和底辊（2）组成的钢板成型机，辊其特征在于，在形成钢板（3）的外侧的底辊（2）的区域中形成具有与钢板（3）的弯曲方向相反的弯曲方向的凸形弯曲部（5）），其接触钢板边缘（4）。

19. 发明申请

US20110121639A1 PRESS-FORMING METHOD OF TUBULAR PART HAVING CROSS SECTION OF IRREGULAR SHAPE, AND TUBULAR PART HAVING CROSS SECTION OF IRREGULAR SHAPE FORMED BY THE PRESS-FORMING METHOD 有权
标题翻译：具有非正交形状横截面的管状部件的压力成形方法和具有通过压制成形方法形成的非正交形状的横截面的管状部件
公开(公告)号：US20110121639A1
公开(公告)日：2011-05-26
申请号：US12736756
申请日：2009-05-12
申请人： Takaaki Fukushi , Isao Anai , Yasushi Yamamoto , Hideyuki Nakamura , Yoshiaki Kadoma , Naoki Hori
发明人： Takaaki Fukushi , Isao Anai , Yasushi Yamamoto , Hideyuki Nakamura , Yoshiaki Kadoma , Naoki Hori
IPC分类号： B60B35/00 , B21D22/02 , B21D53/88
CPC分类号： B60G21/051 , B21D22/025 , B21D53/88 , B60G2200/21 , B60G2202/136 , B60G2206/20 , B60G2206/202 , B60G2206/203 , B60G2206/724 , B60G2206/8102 , Y10T29/49622 , Y10T29/5199 , Y10T29/53996 , Y10T428/12299
摘要： A method of press-forming a tubular part having a cross section of an irregular shape crushes a steel tube between an upper die and a lower die in order to form a V-shaped cross section. When the curvature radius of a tip of the upper die is defined as R1, the curvature radius of a bottom portion of the lower die corresponding to the tip of the upper die is defined as R2, and the wall thickness of the steel tube is defined as t; R1, R2, and t satisfy R1+2t=R2 and 1.5t≦R1≦3t.
摘要翻译：压制成型具有不规则形状的管状部件的方法在上模和下模之间挤压钢管以形成V形横截面。当上模的顶端的曲率半径被定义为R1时，与上模相对应的下模的底部的曲率半径定义为R2，并且限定钢管的壁厚作为t R1，R2和t满足R1 + 2t = R2和1.5t＆nlE; R1＆nlE; 3t。

20. 发明授权

US07719879B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07719879B2
公开(公告)日：2010-05-18
申请号：US11386811
申请日：2006-03-23
申请人： Muneaki Matsushige , Hiroyuki Satake , Hiroshi Furuta , Toshifumi Takahashi , Hideyuki Nakamura
发明人： Muneaki Matsushige , Hiroyuki Satake , Hiroshi Furuta , Toshifumi Takahashi , Hideyuki Nakamura
IPC分类号： G11C11/00
CPC分类号： H01L27/1104 , G11C11/412
摘要： A semiconductor integrated circuit includes a word line extending along a first direction, a first and a second N-well regions, a P-well region disposed between the first and the second N-well regions, a memory cell having a first, second, third, and fourth PMOS transistors, and a first and second NMOS transistors, the first and the second PMOS transistors disposed in the first N-well region along a second direction which is different from the first direction, the first and the second NMOS transistors disposed in the P-well region, and the third and the fourth PMOS transistors disposed in the second N-well region along the second direction.
摘要翻译：半导体集成电路包括沿着第一方向延伸的字线，第一和第二N阱区域，设置在第一和第二N阱区域之间的P阱区域，具有第一，第二，第三和第四PMOS晶体管，以及第一和第二NMOS晶体管，第一和第二PMOS晶体管沿着与第一方向不同的第二方向设置在第一N阱区域中，第一和第二NMOS晶体管被布置以及沿第二方向设置在第二N阱区中的第三和第四PMOS晶体管。

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