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11. 发明授权

US07782915B2 Optical transmitting module including laser diode mounted on driver circuit 有权
标题翻译：光传输模块包括安装在驱动电路上的激光二极管
公开(公告)号：US07782915B2
公开(公告)日：2010-08-24
申请号：US11507666
申请日：2006-08-22
申请人： Akihiro Moto
发明人： Akihiro Moto
IPC分类号： H01S3/00
CPC分类号： H01S5/02252 , H01L2224/48091 , H01S5/02212 , H01S5/02272 , H01S5/0427 , H01S5/06832 , H01L2924/00014
摘要： The present invention is to provide alight emitting module that improves the positional precision of a semiconductor laser diode. A light emitting module of the present invention is configured with a semiconductor laser diode having a facet which inputs, or outputs light; an integrated circuit which is electrically connected to the semiconductor laser diode; and a package which mounts the semiconductor laser diode and the integrated circuit therein. The semiconductor laser diode is mounted on the integrated circuit, and the integrated circuit has a marker. The marker is utilized in determining a position of the semiconductor laser diode with respect to the integrated circuit, and further in determining a position of the semiconductor laser diode with respect to the package.
摘要翻译：本发明是提供改善半导体激光二极管的位置精度的发光模块。本发明的发光模块配置有具有输入或输出光的小面的半导体激光二极管; 电连接到半导体激光二极管的集成电路; 以及将半导体激光二极管和集成电路安装在其中的封装。半导体激光二极管安装在集成电路上，集成电路具有标记。标记用于确定半导体激光二极管相对于集成电路的位置，并且还用于确定半导体激光二极管相对于封装的位置。

12. 发明授权

US06791159B2 Optical module 失效
公开(公告)号：US06791159B2
公开(公告)日：2004-09-14
申请号：US10452938
申请日：2003-06-03
申请人： Akihiro Moto , Tomokazu Katsuyama
发明人： Akihiro Moto , Tomokazu Katsuyama
IPC分类号： H01L2900
CPC分类号： H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/665 , H01L2224/05554 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48195 , H01L2224/49113 , H01L2924/00014 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The present invention reduces the capacitance components of pads to improve high frequency characteristics. An optical module includes a light emitting element having an electrode to which a bias current is supplied, an interconnect substrate on which an interconnect pattern is formed to supply the bias current, and a ferrite bead inductor having one terminal connected to a pad connected to the electrode using a bonding wire and the other terminal connected to a pad as the interconnect pattern.

13. 发明授权

US5952271A Method for manufacturing oxide superconducting films via laser ablation followed by laser material processing 失效
标题翻译：通过激光烧蚀制造氧化物超导膜的激光材料加工方法
公开(公告)号：US5952271A
公开(公告)日：1999-09-14
申请号：US813076
申请日：1997-03-07
申请人： Akihiro Moto , Tatsuoki Nagaishi , Hideo Itozaki
发明人： Akihiro Moto , Tatsuoki Nagaishi , Hideo Itozaki
IPC分类号： C01B13/14 , C01G1/00 , C23C14/28 , C23C14/58 , H01B13/00 , H01L39/24 , B05D3/06
CPC分类号： C23C14/28 , H01L39/2448 , H01L39/2464 , Y10S505/732
摘要： The method for manufacturing superconducting elements according to the present invention includes the following steps of: (a) placing a substrate near a target in a chamber so that the substrate is positioned to face a surface of the target, wherein the target comprises a target material of a complex oxide superconducting compounds; (b) irradiating a laser beam to the surface of the target to vaporize or sublime the target material so that the target material is deposited onto a surface of the substrate, wherein the surface of the substrate maintains the position facing the surface of the target; and (c) fabricating the surface of the target material layer on the substrate to form a superconducting element by irradiating a laser beam to the surface of the substrate, without removing the substrate from the chamber. The laser beam of step (b) used to irradiate may traverse along a first optical path, and the laser beam of step (c) used for fabricating the surface of the target may traverse along a second optical path, which is not consistent with the first optical path.
摘要翻译：根据本发明的制造超导元件的方法包括以下步骤：（a）将基板放置在室内，使得基板定位成与靶的表面相对，其中靶包括目标材料的复合氧化物超导化合物; （b）将激光束照射到所述靶的表面上以使所述靶材料蒸发或升华，使得所述靶材料沉积到所述基板的表面上，其中所述基板的表面保持面向所述目标表面的位置; 和（c）在衬底上制造目标材料层的表面以通过将激光束照射到衬底的表面而形成超导元件，而不从腔室移除衬底。用于照射的步骤（b）的激光束可以沿着第一光路穿过，用于制造靶的表面的步骤（c）的激光束可以沿着与第二光路不一致的第二光路第一光路。

14. 发明授权

US09115033B2 Moisture absorbent for organic electroluminescence element and production method for same 有权
标题翻译：用于有机电致发光元件的吸湿剂及其制备方法
公开(公告)号：US09115033B2
公开(公告)日：2015-08-25
申请号：US14131241
申请日：2012-07-06
申请人： Takayuki Watanabe , Akihiro Moto , Takuya Mishima , Satoru Sano , Akira Ueki
发明人： Takayuki Watanabe , Akihiro Moto , Takuya Mishima , Satoru Sano , Akira Ueki
IPC分类号： C04B35/628 , B01D53/26 , H01L51/52 , B01D53/28 , B01J20/30 , B01J20/32 , B01J20/28 , C04B35/626 , B01J20/04 , H05B33/10 , H05B33/04
CPC分类号： C04B35/62886 , B01D53/261 , B01D53/263 , B01D53/28 , B01D2251/404 , B01D2251/602 , B01D2253/1124 , B01D2253/20 , B01D2253/25 , B01D2253/304 , B01D2253/306 , B01J20/041 , B01J20/28004 , B01J20/28011 , B01J20/28026 , B01J20/28057 , B01J20/28059 , B01J20/3021 , B01J20/3085 , B01J20/3204 , B01J20/3221 , B01J20/3248 , C04B35/6261 , H01L51/5259 , H05B33/04 , H05B33/10
摘要： A moisture absorbent for an organic EL element having hydrophobicity and no reduction in moisture absorption speed, and a method for producing the moisture absorbent are provided. The moisture absorbent for an organic EL element includes, as a main component, calcium oxide particles each having an alkoxide layer on the surface thereof. Furthermore, the method for producing a moisture absorbent for an organic EL element includes dry-pulverizing calcium oxide in the presence of an alcohol, and thereafter dry-treating the pulverized calcium oxide.
摘要翻译：提供了具有疏水性且不降低吸湿速度的有机EL元件的吸湿剂，以及制造吸湿剂的方法。作为有机EL元件的吸湿性物质，作为主要成分，具有在其表面上具有醇盐层的氧化钙粒子。此外，有机EL元件用吸湿剂的制造方法包括在醇的存在下将氧化钙干粉碎，然后干燥处理粉碎的氧化钙。

15. 发明授权

US08121160B2 Driver circuit for semiconductor laser diode driven in differential mode 有权
标题翻译：用于差分模式驱动的半导体激光二极管的驱动电路
公开(公告)号：US08121160B2
公开(公告)日：2012-02-21
申请号：US12402671
申请日：2009-03-12
申请人： Akihiro Moto , Katsumi Uesaka
发明人： Akihiro Moto , Katsumi Uesaka
IPC分类号： H01S3/00
CPC分类号： H01S5/042 , H01S5/0427 , H01S5/0683
摘要： A driver circuit for a semiconductor laser diode (LD) is disclosed, in which the driver circuit drives the LD in the differential mode and lowers the power consumption thereof. The driver circuit includes a differential unit to provide the modulation current to the LD, a voltage converter to provide a positive power supply to the differential unit, a detector to detect the common mode voltage of the differential outputs of the unit, and a comparing unit to control the voltage converter dynamically such that the output common mode voltage is set in a preset reference level.
摘要翻译：公开了一种用于半导体激光二极管（LD）的驱动电路，其中驱动电路以差分模式驱动LD并降低其功耗。驱动器电路包括向LD提供调制电流的差分单元，向差分单元提供正电源的电压转换器，用于检测单元的差分输出的共模电压的检测器，以及比较单元以动态地控制电压转换器，使得输出共模电压被设置在预设的参考电平。

16. 发明授权

US5391543A Microwave resonator of compound oxide superconductor material having a tuning element with a superconductive tip 失效
标题翻译：具有超导电极的调谐元件的复合氧化物超导体材料的微波谐振器
公开(公告)号：US5391543A
公开(公告)日：1995-02-21
申请号：US910573
申请日：1992-07-08
申请人： Kenjiro Higaki , Akihiro Moto , Hideo Itozaki
发明人： Kenjiro Higaki , Akihiro Moto , Hideo Itozaki
IPC分类号： H01P7/08 , H01B12/02
CPC分类号： H01P7/082 , Y10S505/701 , Y10S505/866
摘要： A microwave resonator includes a superconducting signal conductor formed on a first dielectric substrate, and a superconducting ground conductor formed on a second dielectric substrate. The first dielectric substrate is stacked on the superconducting ground conductor of the second dielectric substrate. A rod is adjustably provided to be able to penetrate into an electromagnetic field created by a microwave propagation through the superconducting signal conductor, so that the resonating frequency .function..sub.0 of the microwave resonator can be easily adjusted by controlling the position of a tip end of the rod.
摘要翻译：微波谐振器包括形成在第一介电衬底上的超导信号导体和形成在第二电介质衬底上的超导接地导体。第一电介质基板堆叠在第二电介质基板的超导接地导体上。可调节地设置杆以能够穿透通过超导信号导体的微波传播产生的电磁场，使得可以通过控制杆的尖端的位置来容易地调节微波谐振器的谐振频率f0 。

17. 发明授权

US09088122B2 Driver for laser diode integrated with external modulator 有权
标题翻译：与外部调制器集成的激光二极管驱动器
公开(公告)号：US09088122B2
公开(公告)日：2015-07-21
申请号：US13547090
申请日：2012-07-12
申请人： Akihiro Moto
发明人： Akihiro Moto
IPC分类号： H01S3/00 , H01S5/026 , H01S5/042 , H01S5/00 , H01S5/062 , H01S5/12
CPC分类号： H01S5/0265 , H01S5/0085 , H01S5/0264 , H01S5/042 , H01S5/0428 , H01S5/06226 , H01S5/12
摘要： A driver for an EA-DFB device includes a switching device. The EA-DFB device is put between a positive power supply and a negative power supply as connected in series to a bias current source and the switching device. The EA device is modulated by the switching device in the differential mode. The switching device includes paired transistors each having a load, one of which is a resistor connected in parallel to the EA device, while, the other is constituted by a resistive element.
摘要翻译：用于EA-DFB设备的驱动器包括切换设备。 EA-DFB装置放置在与偏置电流源和开关装置串联连接的正电源和负电源之间。 EA器件由差分模式下的开关器件调制。开关装置包括成对的晶体管，每个具有负载，其中一个是与EA器件并联连接的电阻器，另一个由电阻元件构成。

18. 发明授权

US08571078B2 Laser driver and optical transmitter implementing the same 有权
标题翻译：激光驱动器和光发射机实现相同
公开(公告)号：US08571078B2
公开(公告)日：2013-10-29
申请号：US13282131
申请日：2011-10-26
申请人： Akihiro Moto , Keiji Tanaka
发明人： Akihiro Moto , Keiji Tanaka
IPC分类号： H01S3/00
CPC分类号： H01S5/0428 , H01S5/06216 , H01S5/06226 , H01S5/0683 , H03K17/60 , H03K17/6871
摘要： An LD-Driver with the push-pull arrangement is disclosed. The driver includes the high side driver driven by the positive phase signal and the low side driver driven by the negative phase signal. When the positive phase signal is in HIGH, the high side driver becomes ON and the LD driver provides additional current to the bias current for the LD; while, when the negative phase signal is in HIGH, the low side driver becomes ON and the LD driver extracts a portion of the bias current for the LD.
摘要翻译：公开了具有推挽装置的LD驱动器。驱动器包括由正相信号驱动的高侧驱动器和由负相位信号驱动的低侧驱动器。当正相信号为高电平时，高侧驱动器变为ON，LD驱动器为LD的偏置电流提供额外的电流; 而当负相位信号为高电平时，低侧驱动器变为ON，LD驱动器提取LD的偏置电流的一部分。

19. 发明授权

US07457333B2 Light-transmitting module capable of responding a high-frequency over 10 GHz 有权
标题翻译：光传输模块能够响应10 GHz以上的高频
公开(公告)号：US07457333B2
公开(公告)日：2008-11-25
申请号：US10797571
申请日：2004-03-11
申请人： Akihiro Moto
发明人： Akihiro Moto
IPC分类号： H01S3/04
CPC分类号： H01S5/02216 , H01L2224/48091 , H01L2224/48137 , H01S5/02248 , H01S5/02268 , H01S5/02276 , H01S5/02284 , H01S5/02476 , H01S5/0427 , H01S5/06226 , H01L2924/00014
摘要： The laser diode of the present invention is mounted on the heat sink made of insulating material such as aluminum nitride (AlN). On the heat sink, a metal film, evaporated gold film, is provided and the laser diode is mounted on the heat sink such that the anode electrode of the laser diode faces and is in contact with the metal film. The heat sink is mounted on the grounded metal member, thus the metal member, the heat sink and the metal film forms an capacitor. The bias for the laser diode is provided via the metal film, thereby stabilizing the bias supply even when the operational frequency for the laser diode is over 10 Gbps.
摘要翻译：本发明的激光二极管安装在由诸如氮化铝（AlN）的绝缘材料制成的散热器上。在散热器上，提供金属膜，蒸发的金膜，激光二极管安装在散热器上，使得激光二极管的阳极电极面对并与金属膜接触。散热器安装在接地的金属构件上，因此金属构件，散热器和金属膜形成电容器。激光二极管的偏置通过金属膜提供，从而即使当激光二极管的工作频率超过10Gbps时也稳定偏压电源。

20. 发明授权

US06150677A Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device 有权
标题翻译：化合物半导体的晶体生长方法，化合物半导体器件及其制造方法
公开(公告)号：US06150677A
公开(公告)日：2000-11-21
申请号：US252124
申请日：1999-02-18
申请人： So Tanaka , Akihiro Moto , Tatsuya Tanabe , Nobuyuki Ikoma
发明人： So Tanaka , Akihiro Moto , Tatsuya Tanabe , Nobuyuki Ikoma
IPC分类号： H01L31/0304 , H01L31/12 , H01L31/18 , H01L33/00 , H01L33/32
CPC分类号： H01L31/03046 , H01L31/125 , H01L31/1844 , H01L33/0075 , H01L33/32 , Y02E10/544
摘要： A semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y and/or GaN.sub.y As.sub.1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5.times.10.sup.18 atoms/cm.sup.3 or below.
摘要翻译：在GaAs衬底上设置由Ga1-xInx NyAs1-y和/或GaNyAs1-y组成的并且将氮掺入III-V混晶半导体中形成的半导体层。半导体中的氢浓度保持在5×1018原子/ cm3以下。

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