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11. 发明申请

US20090051843A1 THIN FILM TRANSISTOR, INTEGRATED CIRCUIT, LIQUID CRYSTAL DISPLAY, METHOD OF PRODUCING THIN FILM TRANSISTOR, AND METHOD OF EXPOSURE USING ATTENUATED TYPE MASK 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法和使用衰减型掩模的曝光方法
公开(公告)号：US20090051843A1
公开(公告)日：2009-02-26
申请号：US12256683
申请日：2008-10-23
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： G02F1/1368 , H01L29/772
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

12. 发明申请

US20080019002A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND PHASE SHIFTER 失效
标题翻译：结晶装置，结晶方法和相位改变
公开(公告)号：US20080019002A1
公开(公告)日：2008-01-24
申请号：US11861885
申请日：2007-09-26
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/00
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
摘要翻译：结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

13. 发明申请

US20060240604A1 Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
公开(公告)号：US20060240604A1
公开(公告)日：2006-10-26
申请号：US11397925
申请日：2006-04-03
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

14. 发明授权

US07101436B2 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display 失效
标题翻译：结晶装置，结晶装置中使用的光学构件，结晶方法，薄膜晶体管的制造方法以及显示器的矩阵电路基板的制造方法
公开(公告)号：US07101436B2
公开(公告)日：2006-09-05
申请号：US10603821
申请日：2003-06-26
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： C30B29/16
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.
摘要翻译：结晶装置包括：光照射系统，用于照射相移掩模，并且对具有反相峰值型光强度分布的光束照射非晶半导体膜，所述光束具有相对于相的相移部分的点的最小光强度移位掩模以产生结晶半导体膜。波前分割元件设置在光学照明系统和相移掩模之间的光路上。波前分割元件将从光学照明系统提供的光束前后分割为多个光束，并将波前划分的光束聚集在相应的相移部分或该部分附近。

15. 发明申请

US20060065185A1 Crystallization apparatus, crystallization method, and phase shifter 失效
公开(公告)号：US20060065185A1
公开(公告)日：2006-03-30
申请号：US11224014
申请日：2005-09-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： C30B23/00 , C30B28/12 , C30B28/14 , C30B25/00
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

16. 发明申请

US20050048383A1 Crystallization apparatus and crystallization method 失效
标题翻译：结晶装置和结晶方法
公开(公告)号：US20050048383A1
公开(公告)日：2005-03-03
申请号：US10958396
申请日：2004-10-06
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： B23K26/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L31/036 , G21K5/10 , H01L29/04 , G03F9/00 , H01J37/08
CPC分类号： H01L21/02678 , B23K26/066 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/78675 , Y10S117/90 , Y10S117/904 , Y10S117/905 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
摘要翻译：结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

17. 发明授权

US06816231B2 Method and apparatus for exposure 失效
标题翻译：暴露方法和装置
公开(公告)号：US06816231B2
公开(公告)日：2004-11-09
申请号：US10458387
申请日：2003-06-09
申请人： Susumu Tsujikawa , Yukio Taniguchi , Hirotaka Yamaguchi , Masakiyo Matsumura
发明人： Susumu Tsujikawa , Yukio Taniguchi , Hirotaka Yamaguchi , Masakiyo Matsumura
IPC分类号： G03B2742
CPC分类号： G03F7/70075 , G03B27/42 , G03F7/70366
摘要： Disclosed is an exposure method and apparatus (aligner) for exposure wherein there is reduced a physical load put on a driving mechanism which moves a supporting device for supporting a mask and an exposure object which has a photosensitive material, and the structure of the driving mechanism is simplified. The method comprises an incidence step of letting at least a part of light from a light source for exposure be incident on a mask supported by a supporting device; an imaging step of letting transmission light from the mask be incident on a photosensitive material supported by the supporting device from a direction which is different from a direction of light incident on the mask, thereby causing the transmission light to form an image on the photosensitive material; a rotation step of rotating the supporting device such that a position of irradiation to the mask caused by light from the light source changes along a circumferential direction of the supporting device; and an irradiation position changing step of changing the position of irradiation of light to the mask as well as a position of irradiation of light to the photosensitive material along a direction which is different from the circumferential direction of the supporting device in a rotating plane of the supporting device while the supporting device is being rotated.
摘要翻译：公开了一种用于曝光的曝光方法和装置（对准器），其中减少了放置在驱动机构上的物理负载，该驱动机构移动用于支撑掩模的支撑装置和具有感光材料的曝光对象，以及驱动机构的结构简化了。该方法包括使来自用于曝光的光源的至少一部分光入射到由支撑装置支撑的掩模上的入射步骤; 使来自掩模的透射光的成像步骤从与入射到掩模上的光的方向不同的方向入射到由支撑装置支撑的感光材料上，从而使透射光在感光材料上形成图像 ; 旋转步骤，使所述支撑装置旋转，使得由来自所述光源的光引起的对所述掩模的照射位置沿所述支撑装置的圆周方向变化; 以及照射位置改变步骤，其将光照射到掩模的位置以及沿着与支撑装置的圆周方向不同的方向在光敏材料的旋转平面中将光照射到感光材料的位置支撑装置正在旋转。

18. 发明授权

US07843523B2 Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
公开(公告)号：US07843523B2
公开(公告)日：2010-11-30
申请号：US12256683
申请日：2008-10-23
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： G02F1/136 , H01L21/00
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

19. 发明申请

US20090180190A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 失效
标题翻译：结晶装置，用于结晶装置的光学构件，结晶方法，薄膜晶体管的制造方法和显示器的矩阵电路基板的制造方法
公开(公告)号：US20090180190A1
公开(公告)日：2009-07-16
申请号：US12403726
申请日：2009-03-13
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/10
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
摘要翻译：结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜强度分布以产生结晶的半导体膜。

20. 发明授权

US07456038B2 Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
公开(公告)号：US07456038B2
公开(公告)日：2008-11-25
申请号：US11397925
申请日：2006-04-03
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后使用i射线作为光线照射抗蚀剂，形成接触孔。

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