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11. 发明授权

US07827849B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07827849B2
公开(公告)日：2010-11-09
申请号：US11928505
申请日：2007-10-30
申请人： Takashi Nakashima , Yuichi Yamada , Masashi Ando
发明人： Takashi Nakashima , Yuichi Yamada , Masashi Ando
IPC分类号： G01N7/00
CPC分类号： G01N27/4077
摘要： A gas sensor (1) including a protector (100) for protecting a detection portion (11) of a sensor element (10). The protector (100) has an inner protector (120) and an outer protector (110). A diameter r of an exhaust hole (160) formed in the inner protector (120) and an axial distance h between a front end 10a of the sensor element 10 and the exhaust hole (160) satisfy a relation r≦2h/15+⅓.
摘要翻译：一种气体传感器（1），包括用于保护传感器元件（10）的检测部分（11）的保护器（100）。保护器（100）具有内部保护器（120）和外部保护器（110）。形成在内部保护器（120）中的排气孔（160）的直径r和传感器元件10的前端10a与排气孔（160）之间的轴向距离h满足关系r＆nlE; 2h / 15 + 1/3 。

12. 发明授权

US07607340B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07607340B2
公开(公告)日：2009-10-27
申请号：US11832855
申请日：2007-08-02
申请人： Takashi Nakashima , Yuichi Yamada
发明人： Takashi Nakashima , Yuichi Yamada
IPC分类号： G01N9/00
CPC分类号： G01N27/4077
摘要： In a protector (100) for protecting a detecting portion (11) of a sensor element (10) of a gas sensor (1), the opening area of individual inner introduction holes (130) and (140) formed in an inner protector (120) is 3.5 mm2 or less. In this manner, the amount and size of water droplets able to pass through the inner introduction holes (130) and (140) and to adhere to the sensor element (10) is restricted. In order to ensure good gas replaceability between the interior and the exterior of the inner protector (120) so as to attain quick gas response, the total opening area of the inner introduction holes (130) and (140) is 10 mm2 or more.
摘要翻译：在用于保护气体传感器（1）的传感器元件（10）的检测部分（11）的保护器（100）中，形成在内部保护器（1）中的各个内部引入孔（130）和（140） 120）为3.5mm 2以下。以这种方式，可以限制能够穿过内部引入孔（130）和（140）并粘附到传感器元件（10）的水滴的量和尺寸。为了确保内部保护器（120）的内部和外部之间的良好的气体可更换性，以便获得快速的气体响应，内部导入孔（130）和（140）的总开口面积为10mm 2以上。

13. 发明授权

US07560012B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US07560012B2
公开(公告)日：2009-07-14
申请号：US10525816
申请日：2003-08-27
申请人： Takafumi Shichida , Takaya Yoshikawa , Takashi Nakashima , Satoshi Ishikawa
发明人： Takafumi Shichida , Takaya Yoshikawa , Takashi Nakashima , Satoshi Ishikawa
IPC分类号： G01N27/407 , G01N27/406 , G01N27/26
CPC分类号： G01N27/4077
摘要： A gas sensor is constructed as follows. A protector (4) covering around a gas sensing element (2) has an inner hollow-cylindrical portion (6) and an outer hollow-cylindrical portion (7) that is provided coaxially with the inner hollow-cylindrical portion (6) with an air space (8) in between. Outer-wall gas inlet openings (13) are formed in the outer hollow-cylindrical portion (7), and guiding bodies (10) extending inward are attached to the outer-wall gas inlet openings (13). Inner-wall gas inlet openings (11) are formed in the inner hollow-cylindrical portion (6) at positions nearer to the gas sensing element (2) than the outer-wall gas inlet openings (13). A side wall (9) face of the inner hollow-cylindrical portion (6) opposite the outer-wall gas inlet openings (13) is formed so as to be parallel to a side wall (12) of the outer-hollow cylindrical portion (7) or so as to have a slop-like shape with a diameter enlarging in the axial direction toward a bottom wall (17) of the protector (4). A discharge opening (15) for a gas to be measured is formed in the bottom wall (17).
摘要翻译：气体传感器的构造如下。覆盖在气体感测元件（2）周围的保护器（4）具有内部中空圆柱形部分（6）和与内部中空圆柱形部分（6）同轴设置的外部中空圆柱形部分（7）空中（8）之间。外壁气体入口（13）形成在外中空圆柱形部分（7）中，并且向内延伸的引导体（10）附接到外壁气体入口（13）。内壁气体入口（11）在外壁气体入口（13）的内中空圆筒部（6）的位置处形成在比气体检测元件（2）更靠近的位置处。与外壁气体入口（13）相对的内部中空圆筒部分（6）的侧壁（9）的表面形成为平行于外部中空圆柱形部分的侧壁（12） 7），以具有朝向保护器（4）的底壁（17）在轴向方向上扩大的直径的倾斜形状。在底壁（17）中形成用于待测气体的排出口（15）。

14. 发明申请

US20080156400A1 Low alloy steel 有权
标题翻译：低合金钢
公开(公告)号：US20080156400A1
公开(公告)日：2008-07-03
申请号：US12073324
申请日：2008-03-04
申请人： Takashi Nakashima , Kaori Kawano , Masaaki Igarashi
发明人： Takashi Nakashima , Kaori Kawano , Masaaki Igarashi
IPC分类号： C22C38/22
CPC分类号： C21C7/0006 , C21C7/06 , C22C38/005 , C22C38/02 , C22C38/04 , C22C38/22
摘要： According to a low alloy steel of the present invention, compositional elements thereof are limited, and a metal structure thereof comprises bainite or martensite. Further, a proper amounts of Nd inclusions are formed by appropriately selecting timings of deoxidation and Nd addition in melting a steel. Consequently, compatibility between high-temperature creep strength and long-term creep ductility, which is hardly established in conventional steels, can be achieved even in hostile conditions. Accordingly, the low alloy steel of the present invention can be widely applied as the material for the heat-resistant structural member used for a long time under the high-temperature and high-pressure conditions such as power plant boilers, turbines, and nuclear power plants.
摘要翻译：根据本发明的低合金钢，其组成元素受到限制，其金属结构包括贝氏体或马氏体。此外，通过在钢中熔融时适当选择脱氧和Nd添加的定时，形成适量的Nd夹杂物。因此，即使在恶劣的条件下，也可以实现在常规钢中难以确定的高温蠕变强度与长期蠕变延展性之间的相容性。因此，本发明的低合金钢可以广泛地用作在高温高压条件下长时间使用的耐火构件的材料，例如发电厂锅炉，涡轮机和核能植物。

15. 发明申请

US20080075653A1 Cobalt-Contaning Black Pigment Particulates 失效
标题翻译：钴黑色颜料颗粒
公开(公告)号：US20080075653A1
公开(公告)日：2008-03-27
申请号：US11662733
申请日：2005-09-16
申请人： Tomoyuki Hoshino , Koichi Katsuyama , Shoichi Fujiyasu , Takashi Nakashima
发明人： Tomoyuki Hoshino , Koichi Katsuyama , Shoichi Fujiyasu , Takashi Nakashima
IPC分类号： C01G51/04
CPC分类号： C09C1/0009 , B82Y30/00 , C01G51/04 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/19 , C01P2006/40 , C01P2006/60
摘要： Disclosed is a black pigment having adequate degree of blackness and high electrical resistance at the same time. Specifically disclosed is a granular black pigment containing cobalt which is characterized in that it is composed of an oxide containing at least cobalt and the divalent cobalt content accounts for 40-70% of the total cobalt content. It is preferable that the total cobalt content in a whole particle is 60-80% by mass, and the divalent cobalt content in a whole particle is 20-50% by mass. It is also preferable that the primary particle diameter is 0.02-0.6 μm.
摘要翻译：公开了同时具有足够的黑度和高电阻的黑色颜料。具体公开的是含有钴的粒状黑色颜料，其特征在于它由至少含有钴的氧化物组成，二价钴含量占总钴含量的40-70％。整个颗粒中的总钴含量优选为60〜80质量％，整个颗粒中的二价钴含量为20〜50质量％。另外，一次粒径优选为0.02〜0.6μm。

16. 发明授权

US07256178B2 Physiologically active substances 有权
标题翻译：生理活性物质
公开(公告)号：US07256178B2
公开(公告)日：2007-08-14
申请号：US10522731
申请日：2003-07-31
申请人： Yoshihiko Kotake , Jun Niijima , Yoshio Fukuda , Mitsuo Nagai , Regina Mikie Kanada , Susumu Takeda , Takashi Nakashima , Masashi Yoshida , Toshio Tsuchida , Tomohiro Sameshima
发明人： Yoshihiko Kotake , Jun Niijima , Yoshio Fukuda , Mitsuo Nagai , Regina Mikie Kanada , Susumu Takeda , Takashi Nakashima , Masashi Yoshida , Toshio Tsuchida , Tomohiro Sameshima
IPC分类号： A01N43/04 , A61K31/70 , A61K39/00 , A61K39/38 , A61K39/40
CPC分类号： C07D407/06 , C07D313/00 , C12P17/08 , C12P17/16 , C12P17/162
摘要： Compounds represented by the following general formula (I), pharmacologically acceptable salts thereof or hydrates of the same: (I) wherein W represents and R3, R7, R16, R17, R20, R21 and R21′ are the same or different and each represents hydrogen, etc. Because of inhibiting angiogenesis and inhibiting the production of VEGF particularly in hypoxia, the compounds (I) are useful as remedies for solid cancer.
摘要翻译：由以下通式（I）表示的化合物，其药学上可接受的盐或其水合物：其中W表示和R 3，R 7，R 7， SUP> 16，R 17，R 20，R 21和R 21'是相同或不同，各自表示氢等。由于抑制血管生成并抑制VEGF的产生，特别是在缺氧中，化合物（I）可用作固体癌症的补救措施。

17. 发明申请

US20050241937A1 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US20050241937A1
公开(公告)日：2005-11-03
申请号：US10525816
申请日：2003-08-27
申请人： Takafumi Shichida , Takaya Yoshikawa , Takashi Nakashima , Satoshi Ishikawa
发明人： Takafumi Shichida , Takaya Yoshikawa , Takashi Nakashima , Satoshi Ishikawa
IPC分类号： G01N27/407 , G01N27/26
CPC分类号： G01N27/4077
摘要： A gas sensor is constructed as follows. A protector (4) covering around a gas sensing element (2) has an inner hollow-cylindrical portion (6) and an outer hollow-cylindrical portion (7) that is provided coaxially with the inner hollow-cylindrical portion (6) with an air space (8) in between. Outer-wall gas inlet openings (13) are formed in the outer hollow-cylindrical portion (7), and guiding bodies (10) extending inward are attached to the outer-wall gas inlet openings (13). Inner-wall gas inlet openings (11) are formed in the inner hollow-cylindrical portion (6) at positions nearer to the gas sensing element (2) than the outer-wall gas inlet openings (13). A side wall (9) face of the inner hollow-cylindrical portion (6) opposite the outer-wall gas inlet openings (13) is formed so as to be parallel to a side wall (12) of the outer-hollow cylindrical portion (7) or so as to have a slop-like shape with a diameter enlarging in the axial direction toward a bottom wall (17) of the protector (4). A discharge opening (15) for a gas to be measured is formed in the bottom wall (17).
摘要翻译：气体传感器的构造如下。覆盖在气体感测元件（2）周围的保护器（4）具有内部中空圆柱形部分（6）和与内部中空圆柱形部分（6）同轴设置的外部中空圆柱形部分（7）空中（8）之间。外壁气体入口（13）形成在外中空圆柱形部分（7）中，并且向内延伸的引导体（10）附接到外壁气体入口（13）。内壁气体入口（11）在外壁气体入口（13）的内中空圆筒部（6）的位置处形成在比气体检测元件（2）更靠近的位置处。与外壁气体入口（13）相对的内部中空圆筒部分（6）的侧壁（9）的表面形成为平行于外部中空圆柱形部分的侧壁（12） 7），以具有朝向保护器（4）的底壁（17）在轴向方向上扩大的直径的倾斜形状。在底壁（17）中形成用于待测气体的排出口（15）。

18. 发明授权

US06469366B1 Bipolar transistor with collector diffusion layer formed deep in the substrate 失效
标题翻译：具有集电极扩散层的双极晶体管形成在衬底的深处
公开(公告)号：US06469366B1
公开(公告)日：2002-10-22
申请号：US09714112
申请日：2000-11-17
申请人： Takashi Nakashima , Atsushi Tominaga
发明人： Takashi Nakashima , Atsushi Tominaga
IPC分类号： H01L27082
CPC分类号： H01L29/0821 , H01L27/0705 , H01L29/732
摘要： A semiconductor device allowing reduction in area occupied by a bipolar transistor as well as a method of manufacturing the same are obtained. The semiconductor device includes a substrate, first conductivity type regions, a collector region, base regions and emitter regions. The first conductivity type region is formed on the substrate, and has a main surface. The collector region is formed in the first conductivity type region. The base region is located in the first conductivity type region and on the collector region. The emitter region is located in the first conductivity type region and on the base region. The first conductivity type region is provided with grooves extending to the collector region, and isolation grooves disposed around a vertical bipolar transistor. The grooves are filled with conductors of the second conductivity type. The isolation grooves are filled with isolation conductors of the second conductivity type.
摘要翻译：可以获得允许减小由双极晶体管占据的面积的半导体器件及其制造方法。半导体器件包括衬底，第一导电类型区域，集电极区域，基极区域和发射极区域。第一导电类型区域形成在基板上，并且具有主表面。集电极区域形成在第一导电类型区域中。基极区域位于第一导电类型区域和集电极区域。发射极区域位于第一导电类型区域和基极区域中。第一导电类型区域设置有延伸到集电极区域的沟槽和设置在垂直双极晶体管周围的隔离沟槽。凹槽填充有第二导电类型的导体。隔离槽填充有第二导电类型的隔离导体。

19. 发明授权

US5614443A Method of producing a frame made of connected semiconductor die mounting substrates 失效
标题翻译：制造由连接的半导体管芯安装基板制成的框架的方法
公开(公告)号：US5614443A
公开(公告)日：1997-03-25
申请号：US622144
申请日：1996-03-27
申请人： Takashi Nakashima , Keiji Takai , Kouji Tateishi
发明人： Takashi Nakashima , Keiji Takai , Kouji Tateishi
IPC分类号： H01L23/12 , H01L21/98 , H01L23/50 , H01L23/538 , H01L25/065 , H01L21/60
CPC分类号： H01L25/50 , H01L23/5385 , H01L25/0655 , H01L2924/0002 , Y10T156/1057 , Y10T29/4921 , Y10T29/49222
摘要： Method of producing a frame made of connected semiconductor die mounting substrates comprises i) a first step for producing a metal substrate sheet wherein an original material for metal substrate sheet of a desired size is cut out from a metal material and an erosion preventing layer is provided on the entire surface thereof, ii) a second step for producing a circuit substrate sheet wherein the circuit substrate sheet is made of a resin substrate coated with a copper leaf layer and is provided with a lead pattern on the surface thereof in place, iii) a third step for producing a connected semiconductor die mounting substrate sheet by adhering the metal substrate sheet to the circuit substrate sheet, iv) a fourth step for forming a plurality of pilot apertures and slits on the connected semiconductor die mounting substrate sheet by press working and v) a fifth step for producing a plurality of connected semiconductor die mounting substrate frames by separating the connected semiconductor die mounting substrate sheet.
摘要翻译：制造由连接的半导体管芯安装基板制成的框架的方法包括：i）制造金属基片的第一步骤，其中提供从金属材料切割所需尺寸的金属基片的原始材料和防腐蚀层在其整个表面上，ii）用于制造电路基片的第二步骤，其中电路基片由涂有铜箔层的树脂基片制成，并在其表面上设有引线图案，iii）第三步骤，通过将金属基片粘附到电路基片上来制造连接的半导体管芯安装基片; iv）第四步骤，用于通过冲压加工在连接的半导体管芯安装基片上形成多个引导孔和狭缝， v）通过分离连接的半导体来生产多个连接的半导体管芯安装衬底框架的第五步骤或模具安装基板。

20. 发明授权

US5469428A Loop-back system in a dual ring network 失效
标题翻译：双环网络中的环回系统
公开(公告)号：US5469428A
公开(公告)日：1995-11-21
申请号：US858364
申请日：1992-03-25
申请人： Nobuyuki Tokura , Yoshio Kajiyama , Hideo Tatsuno , Takashi Nakashima
发明人： Nobuyuki Tokura , Yoshio Kajiyama , Hideo Tatsuno , Takashi Nakashima
IPC分类号： H04L12/437 , H04Q11/04 , H04L12/42
CPC分类号： H04L12/437 , H04J2203/006 , H04J2203/0089
摘要： A loop-back recovery technique used when a failure takes place in a ring network, for transmitting information to a path indicated with a path ID number or the time slot position from a periodic frame. This is achieved by establishing working paths on one of the dual ring line between a transmission node and a receiving node thereof, establishing ring-formed protection paths in a ring line of the direction opposite to the working line, and making a loop-back from the working paths to the corresponding protection paths at a node which detected the failure. The receiving node multiplexes the working and protection paths to receive data from either.
摘要翻译：当在环形网络中发生故障时使用的环回恢复技术，用于将信息发送到由周期性帧中的路径ID号或时隙位置指示的路径。这通过在传输节点和其接收节点之间的双环线之一上建立工作路径来实现，在与工作线相反的方向的环线中建立环形保护路径，并且从在检测到故障的节点处的相应保护路径的工作路径。接收节点多路复用工作和保护路径以接收数据。

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