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11. 发明申请

US20050179133A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050179133A1
公开(公告)日：2005-08-18
申请号：US10975448
申请日：2004-10-29
申请人： Tomio Iwasaki , Hiroshi Moriya
发明人： Tomio Iwasaki , Hiroshi Moriya
IPC分类号： H01L27/10 , H01L21/8246 , H01L23/48 , H01L27/112
CPC分类号： H01L27/11206 , H01L27/112
摘要： A semiconductor device provided with a mechanism for recording information is intended to provide a highly reliable one time programmable memory and to provide one time programmable memories at a high yield. In a one time programmable memory, a state in which the electrical resistance is high is varied to another state in which it is low by silicifying a metal with silicon and matching the high resistance state (a metal/silicon separated state) and the low resistance state (a silicide state) to 0 and 1, respectively, wherein there is used an underlayer material which reduces the interfacial energy in the interface with the silicide layer, which constitutes the low resistance state.
摘要翻译：设置有用于记录信息的机构的半导体器件旨在提供高度可靠的一次可编程存储器，并以高产量提供一次可编程存储器。在一次可编程存储器中，电阻高的状态通过用硅硅化硅并匹配高电阻状态（金属/硅分离状态）和低电阻而变化到另一个低电位的状态状态（硅化物状态）分别为0和1，其中使用降低与构成低电阻状态的硅化物层的界面中的界面能的底层材料。

12. 发明授权

US08372693B2 Semiconductor device including semiconductor chips with different thickness 有权
标题翻译：包括具有不同厚度的半导体芯片的半导体器件
公开(公告)号：US08372693B2
公开(公告)日：2013-02-12
申请号：US13538654
申请日：2012-06-29
申请人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
发明人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
IPC分类号： H01L23/02 , H01L23/485 , H01L25/10
CPC分类号： H01L25/105 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/50 , H01L24/86 , H01L25/0657 , H01L2224/29101 , H01L2224/29191 , H01L2225/0652 , H01L2225/06555 , H01L2225/06579 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
摘要翻译：在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。

13. 发明授权

US07608899B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07608899B2
公开(公告)日：2009-10-27
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

14. 发明授权

US07358578B2 Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring 有权
标题翻译：具有（111）取向的衬底上的场效应晶体管具有氧化锆栅极绝缘体和钴或镍硅化物布线
公开(公告)号：US07358578B2
公开(公告)日：2008-04-15
申请号：US10155833
申请日：2002-05-22
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

15. 发明申请

US20070096189A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070096189A1
公开(公告)日：2007-05-03
申请号：US11594780
申请日：2006-11-09
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

16. 发明申请

US20060223268A1 Phase-change random access memory and process for producing same 审中-公开
标题翻译：相变随机存取存储器及其生产过程
公开(公告)号：US20060223268A1
公开(公告)日：2006-10-05
申请号：US11329990
申请日：2006-01-10
申请人： Hiroshi Moriya , Tomio Iwasaki
发明人： Hiroshi Moriya , Tomio Iwasaki
IPC分类号： H01L21/336 , H01L27/12 , H01L21/4763 , H01L27/01 , H01L31/0392
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： An object of the present invention is to provide a phase-change random access memory which hardly causes the peeling of a phase-change film in a production process. In the present invention, the surface of an insulating film around the phase-change film is positioned to a more substrate side than an interface between the insulating film and the phase-change film on the insulating film is.
摘要翻译：本发明的目的是提供一种在生产过程中几乎不引起相变膜剥离的相变随机存取存储器。在本发明中，相变膜周围的绝缘膜的表面位于比绝缘膜上的绝缘膜和相变膜之间的界面更多的基板侧。

17. 发明申请

US20050156150A1 Phase change memory and phase change recording medium 失效
标题翻译：相变存储器和相变记录介质
公开(公告)号：US20050156150A1
公开(公告)日：2005-07-21
申请号：US10975522
申请日：2004-10-29
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
IPC分类号： B41M5/26 , G11B7/24 , G11B7/241 , G11B7/243 , G11B7/252 , G11B7/254 , G11B7/257 , H01L27/24 , H01L29/02 , H01L45/00
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.
摘要翻译：相变存储器包括：基板; 形成在所述基板的主表面上的绝缘膜; 沉积在绝缘膜上的第一电极; 沉积在第一电极上的相变记录膜; 以及沉积在相变记录膜上的第二电极。相变记录膜包含Ge，Sb和Te中的至少两个作为其主要构成元素。第一电极包括Ti，Si和N组的材料，或Ta，Si和N组作为其主要构成材料。

18. 发明申请

US20050024811A1 Semiconductor device with adhesion-improvement capacitor and process for producing the device 失效
标题翻译：具有粘附改善电容器的半导体器件及其制造方法
公开(公告)号：US20050024811A1
公开(公告)日：2005-02-03
申请号：US10923002
申请日：2004-08-23
申请人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
发明人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
IPC分类号： H01L27/10 , H01L21/02 , H01L21/8242 , H01L27/108 , H01G4/008
CPC分类号： H01L28/60 , H01L27/10814 , H01L28/55
摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.
摘要翻译：一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

19. 发明授权

US06489648B2 Semiconductor device 有权
公开(公告)号：US06489648B2
公开(公告)日：2002-12-03
申请号：US09944485
申请日：2001-08-30
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L27/10873 , H01L28/56 , H01L28/57 , H01L29/4975 , H01L29/513
摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

20. 发明申请

US20150028976A1 Rare-Earth Magnet 审中-公开
标题翻译：稀土磁铁
公开(公告)号：US20150028976A1
公开(公告)日：2015-01-29
申请号：US14379707
申请日：2012-03-26
申请人： Hiroshi Moriya
发明人： Hiroshi Moriya
IPC分类号： H01F7/02 , H01F1/40 , H01F1/42
CPC分类号： H01F7/02 , C22C38/002 , C22C38/005 , C22C2202/02 , H01F1/057 , H01F1/40 , H01F1/42 , H01F10/126 , H01F41/32
摘要： The purpose of the present invention is to provide a structure of a rare-earth magnet having high coercivity. In order to solve the problem, a rare-earth magnet according to the present invention comprises sheets of elements bonded with each other through a covalent bond 100 and layers comprising a transition metal element 200 laminated with the sheet 100, wherein a rare earth element is arranged within a plane of the sheets.
摘要翻译：本发明的目的是提供一种具有高矫顽力的稀土类磁体的结构。为了解决这个问题，根据本发明的稀土类磁体包括通过共价键100彼此结合的元件片和包含层压在片材100上的过渡金属元件200的层，其中稀土元素是布置在片材的平面内。

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