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    • 12. 发明授权
    • Rubber composition improved in anti-static property and pneumatic tire
using the same
    • 橡胶组合物的抗静电性能得到改善和使用其的充气轮胎
    • US6130277A
    • 2000-10-10
    • US46589
    • 1998-03-24
    • Nobuyuki OkamuraMasaaki TsuchihashiIsao Nishi
    • Nobuyuki OkamuraMasaaki TsuchihashiIsao Nishi
    • C08K5/00C08K5/06C08K5/41C08L21/00C08K5/09
    • C08K5/06C08K5/0075C08K5/41C08L21/00C08L9/06
    • Provided are a rubber composition improved in an anti-static property and a pneumatic tire using the same for its tread part, wherein the rubber composition comprises natural rubber and/or diene base synthetic rubber and a white filler as a filler, and further comprises an anionic anti-static agent or a polyoxyalkylene glycol compound represented by the flowing formulas (I), (II) or (III): ##STR1## wherein R.sup.1 and R.sup.3 each represent a linear or branched, saturated or unsaturated aliphatic hydrocarbon group having 1 to 21 carbon atoms, or an aryl group; R.sup.4 and R.sup.5 each represent a hydrogen atom, a linear or branched, saturated or unsaturated aliphatic hydrocarbon group having 1 to 21 carbon atoms, or an aryl group; R.sup.1 and R.sup.3 in the above formula (I), R.sup.4 and R.sup.3 in the above formula (II) and R.sup.4 and R.sup.5 in the above formula (III) in one same molecule may be the same as or different from each other; R.sup.2 is a methylene, ethylene, propylene or tetramethylene group, and all R.sup.2 's may be the same or different; and n is an integer of 100 or less.
    • 提供一种抗静电性提高的橡胶组合物和使用该橡胶组合物的胎面部分的充气轮胎,其中橡胶组合物包含天然橡胶和/或二烯基合成橡胶和作为填料的白色填料,并且还包含 阴离子抗静电剂或由流化式(I),(II)或(III)表示的聚氧亚烷基二醇化合物:其中R 1和R 3各自表示具有1至21个碳原子的直链或支链,饱和或不饱和的脂族烃基 ,或芳基; R4和R5各自表示氢原子,具有1至21个碳原子的直链或支链,饱和或不饱和的脂族烃基或芳基; 上述式(I)中的R 1和R 3,上述式(II)中的R 4和R 3以及上述式(III)中的R 4和R 5在一个相同的分子中可以彼此相同或不同; R2是亚甲基,亚乙基,亚丙基或四亚甲基,所有的R 2可以相同或不同; n为100以下的整数。
    • 16. 发明授权
    • Plasma processing method
    • 等离子体处理方法
    • US06291029B1
    • 2001-09-18
    • US09368497
    • 1999-08-05
    • Satoshi TakakiAtsushi YamagamiNobuyuki Okamura
    • Satoshi TakakiAtsushi YamagamiNobuyuki Okamura
    • C23C1600
    • H01J37/32082C23C16/24C23C16/509
    • To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.
    • 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性,等离子体处理装置包括反应容器,该反应容器具有由电介质部件构成的部分,其容纳成膜基板,并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置,设置在反应容器外侧位置处的阴极,阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对,并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置(匹配电路和高频电源)。 将30MHz至300MHz的高频功率提供给阴极,以在电介质构件和成膜衬底之间产生等离子体。
    • 17. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US5970907A
    • 1999-10-26
    • US791460
    • 1997-01-27
    • Satoshi TakaiAtsushi YamagamiNobuyuki Okamura
    • Satoshi TakaiAtsushi YamagamiNobuyuki Okamura
    • C23C16/24C23C16/509H01J37/32C23C16/00
    • H01J37/32082C23C16/24C23C16/509
    • To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.
    • 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性,等离子体处理装置包括反应容器,该反应容器具有由电介质部件构成的部分,其容纳成膜基板,并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置,设置在反应容器外侧位置处的阴极,阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对,并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置(匹配电路和高频电源)。 将30MHz至300MHz的高频功率提供给阴极,以在电介质构件和成膜衬底之间产生等离子体。
    • 18. 发明授权
    • Method for forming a functional deposited film by bias sputtering
process at a relatively low substrate temperature
    • 在相对低的基板温度下通过偏压溅射法形成功能沉积膜的方法
    • US5510011A
    • 1996-04-23
    • US362750
    • 1994-12-22
    • Nobuyuki OkamuraAtsushi Yamagami
    • Nobuyuki OkamuraAtsushi Yamagami
    • C23C14/34H01J37/34H01L21/203H01L21/331
    • C23C14/345C23C14/34H01J37/32706H01J37/3405H01J37/3473H01L21/02381H01L21/02532H01L21/02631H01L29/66287
    • In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.
    • 在一种偏压溅射方法中,包括在真空容器内使用来自高频电源的高频能产生溅射气体的等离子体,所述溅射气体的等离子体在其上具有目标靶的目标电极和具有用于成膜的基板的基板电极之间 并用所述等离子体溅射所述靶,同时从直流电源施加直流电压至所述目标电极或所述衬底电极中的至少一个,由此导致在所述衬底上形成膜,其改进包括交替地重复沉积 步骤和非沉积步骤,所述沉积步骤包括用所述等离子体溅射所述靶,同时用所述等离子体的离子辐照所述衬底,同时在所述衬底上沉积膜,并且所述非沉积步骤包括用所述等离子体的离子照射所述衬底 而不溅射所述靶,从而在s上形成高质量的功能沉积膜 辅助底物。
    • 19. 发明授权
    • Vertical heat treatment apparatus
    • 立式热处理设备
    • US08709159B2
    • 2014-04-29
    • US12170477
    • 2008-07-10
    • Nobuyuki Okamura
    • Nobuyuki Okamura
    • C23C16/00C23F1/00H01L21/306
    • H01L21/67248
    • A vertical heat treatment apparatus enabling the insertion of a temperature sensor in the reaction tube without disassembling the apparatus is disclosed. The vertical heat treatment apparatus includes a reaction tube; a heating section; a wafer holding section; a supporting section movably provided in the vertical direction so as to seal the reaction tube while the wafer holding section is in the reaction tube; a temperature sensor insertion section provided in the supporting section and having a through hole for guiding a temperature sensor so that the temperature sensor can be inserted into the reaction tube; and a cap section for opening and closing the through hole of the temperature sensor insertion section while the wafer holding section is on the supporting section.
    • 公开了能够在不拆卸设备的情况下将温度传感器插入反应管的立式热处理装置。 立式热处理装置包括反应管; 加热段; 晶片保持部; 支撑部分,其在所述晶片保持部位于所述反应管中的同时沿所述垂直方向可移动地设置以密封所述反应管; 温度传感器插入部,设置在所述支撑部中,并具有用于引导温度传感器的通孔,使得所述温度传感器能够插入所述反应管中; 以及盖部,用于在晶片保持部位在支撑部上的同时打开和关闭温度传感器插入部的通孔。