专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5970907A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5970907A
公开(公告)日：1999-10-26
申请号：US791460
申请日：1997-01-27
申请人： Satoshi Takai , Atsushi Yamagami , Nobuyuki Okamura
发明人： Satoshi Takai , Atsushi Yamagami , Nobuyuki Okamura
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/509
摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.
摘要翻译：为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜基板相对，并且用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

2. 发明授权

US5534070A Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
标题翻译：使用非常高频和等离子体CVD装置的等离子体CVD工艺
公开(公告)号：US5534070A
公开(公告)日：1996-07-09
申请号：US343560
申请日：1994-11-30
申请人： Nobuyuki Okamura , Atsushi Yamagami , Satoshi Takaki
发明人： Nobuyuki Okamura , Atsushi Yamagami , Satoshi Takaki
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , H05H1/20
CPC分类号： H01J37/321 , C23C16/509 , H01J37/32532
摘要： A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.
摘要翻译： PCT No.PCT / JP94 / 00537 371日期1994年11月30日 102（e）1994年11月30日PCT PCT日期为1994年3月31日。等离子体CVD工艺包括在能够基本上被抽真空的反应室中进行成膜，其中多个圆柱形基板间隔布置在同心圆上所述反应室使得在所述反应室的内部的中心位置处形成期望的放电空间，并且在所述放电空间的中心位置处设置阴极，通过将成膜气体引入所述放电空间并施加从高频电源到所述阴极电极的高频电力，以在所述多个圆柱形基板和所述阴极之间产生等离子体，由此在所述多个圆柱形基板中的每一个的表面上形成沉积膜，其特征在于，包括非磁性材料和软磁性材料或层叠的绝缘材料的屏蔽设置在每一个上 e所述阴极电极的相对端部分，并且将所述高频电源的频率范围为60MHz或更高的非常高频能量施加到所述阴极以在所述反应室中产生等离子体，由此形成沉积膜在所述多个圆柱形基底中的每一个的表面上。以及适用于实施等离子体CVD工艺的VHF等离子体CVD装置。

3. 发明授权

US5316645A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5316645A
公开(公告)日：1994-05-31
申请号：US22599
申请日：1993-02-17
申请人： Atsushi Yamagami , Nobuyuki Okamura , Tadahiro Ohmi , Haruhiro H. Goto , Tadashi Shibata
发明人： Atsushi Yamagami , Nobuyuki Okamura , Tadahiro Ohmi , Haruhiro H. Goto , Tadashi Shibata
IPC分类号： C23C14/34 , C23C14/35 , C23C16/509 , H01J37/34
CPC分类号： C23C14/3435 , C23C14/345 , C23C14/35 , C23C16/509 , H01J37/32697 , H01J37/3405 , H01J2237/332
摘要： A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.
摘要翻译：等离子体处理装置包括：可与等离子体发生电源连接的第一电极; 第二电极，其能够支撑待进行等离子体相关表面处理的基板; 封闭第一和第二电极之间的空间的第三电极，所有电极都位于可抽空的腔室中; 以及用于控制第三电极的电位的电位控制装置。

4. 发明授权

US5846612A Process for forming high-quality deposited film utilizing plasma CVD 失效
标题翻译：使用等离子体CVD形成高质量沉积膜的工艺
公开(公告)号：US5846612A
公开(公告)日：1998-12-08
申请号：US627018
申请日：1996-04-03
申请人： Satoshi Takaki , Atsushi Yamagami , Nobuyuki Okamura
发明人： Satoshi Takaki , Atsushi Yamagami , Nobuyuki Okamura
IPC分类号： H05H1/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/511 , G03G5/082 , H01L21/205 , H01L31/04 , B05D3/06 , H05H1/00
CPC分类号： H01J37/32082 , C23C16/505 , C23C16/511 , G03G5/08278 , H01J2237/3321
摘要： Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.
摘要翻译：本发明提供一种以与CVD等离子体CVD法形成的膜相当或更高质量的高成膜速度高效地形成高质量的沉积膜的方法。在减压下将原料气体引入设置有阴极电极的反应容器中，将50〜300MHz范围内的高频电力供给到阴极电极，由此能量为40的原料气体的离子或更多的eV撞击基板，从而在其上形成沉积膜。

5. 发明授权

US5728278A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5728278A
公开(公告)日：1998-03-17
申请号：US340472
申请日：1994-11-14
申请人： Nobuyuki Okamura , Atsushi Yamagami , Tadahiro Ohmi , Haruhiro Harry Goto , Tadashi Shibata
发明人： Nobuyuki Okamura , Atsushi Yamagami , Tadahiro Ohmi , Haruhiro Harry Goto , Tadashi Shibata
IPC分类号： C23C14/34 , C23C14/00 , C23C14/35 , C23C14/56 , C23C16/509 , H01J37/34 , H01L21/203
CPC分类号： C23C14/35 , C23C14/564 , H01J37/3244 , H01J37/3402
摘要： A plasma processing apparatus has a vacuum container which contains a pair of electrodes for causing a discharge for generating a plasma, and a shielding plate for separating a plasma processing region including a space between the electrodes from a region in contact with the inner wall of the vacuum container in such a manner that both the regions communicate with each other. The apparatus includes a means for causing a pressure difference between the plasma processing region and the region in contact with the inner wall of the vacuum container.
摘要翻译：等离子体处理装置具有真空容器，该真空容器包含用于产生等离子体的放电的一对电极，以及用于将包括电极之间的空间的等离子体处理区域从与所述等离子体的内壁接触的区域分离的屏蔽板真空容器以两个区域彼此连通的方式。该装置包括用于引起等离子体处理区域和与真空容器的内壁接触的区域之间的压力差的装置。

6. 发明授权

US5540781A Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
标题翻译：使用非常高频和等离子体CVD装置的等离子体CVD工艺
公开(公告)号：US5540781A
公开(公告)日：1996-07-30
申请号：US338617
申请日：1994-11-23
申请人： Atsushi Yamagami , Nobuyuki Okamura , Satoshi Takaki
发明人： Atsushi Yamagami , Nobuyuki Okamura , Satoshi Takaki
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , C23C16/00 , H05H1/20
CPC分类号： H01J37/32082 , C23C16/5093 , H01J37/32541 , H05H1/46
摘要： A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.
摘要翻译： PCT No.PCT / JP94 / 00462 Sec。 371日期1994年11月23日 102（e）日期1994年11月23日PCT 1994年3月23日提交了一种VHF等离子体CVD法，其中阴极电极在圆筒形基板的轴向电分成多个元件，并且具有非常高的频率通过用于在反应室中产生等离子体从而形成沉积膜的高频电源装置向每个分割的阴极电极元件提供频率在60MHz至300MHz的范围内的能量; 以及适用于进行VHF等离子体处理的VHF等离子体CVD装置。

7. 发明授权

US06291029B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06291029B1
公开(公告)日：2001-09-18
申请号：US09368497
申请日：1999-08-05
申请人： Satoshi Takaki , Atsushi Yamagami , Nobuyuki Okamura
发明人： Satoshi Takaki , Atsushi Yamagami , Nobuyuki Okamura
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/509
摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.
摘要翻译：为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜基板相对，并且用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

8. 发明授权

US5510011A Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature 失效
标题翻译：在相对低的基板温度下通过偏压溅射法形成功能沉积膜的方法
公开(公告)号：US5510011A
公开(公告)日：1996-04-23
申请号：US362750
申请日：1994-12-22
申请人： Nobuyuki Okamura , Atsushi Yamagami
发明人： Nobuyuki Okamura , Atsushi Yamagami
IPC分类号： C23C14/34 , H01J37/34 , H01L21/203 , H01L21/331
CPC分类号： C23C14/345 , C23C14/34 , H01J37/32706 , H01J37/3405 , H01J37/3473 , H01L21/02381 , H01L21/02532 , H01L21/02631 , H01L29/66287
摘要： In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.
摘要翻译：在一种偏压溅射方法中，包括在真空容器内使用来自高频电源的高频能产生溅射气体的等离子体，所述溅射气体的等离子体在其上具有目标靶的目标电极和具有用于成膜的基板的基板电极之间并用所述等离子体溅射所述靶，同时从直流电源施加直流电压至所述目标电极或所述衬底电极中的至少一个，由此导致在所述衬底上形成膜，其改进包括交替地重复沉积步骤和非沉积步骤，所述沉积步骤包括用所述等离子体溅射所述靶，同时用所述等离子体的离子辐照所述衬底，同时在所述衬底上沉积膜，并且所述非沉积步骤包括用所述等离子体的离子照射所述衬底而不溅射所述靶，从而在s上形成高质量的功能沉积膜辅助底物。

9. 发明授权

US6065425A Plasma process apparatus and plasma process method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6065425A
公开(公告)日：2000-05-23
申请号：US120319
申请日：1998-07-22
申请人： Satoshi Takaki , Atsushi Yamagami
发明人： Satoshi Takaki , Atsushi Yamagami
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/509 , H01J37/32541 , H01J37/32577
摘要： In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.
摘要翻译：为了以高速率实现等离子体处理，例如在大面积基板上形成具有非常均匀厚度和质量的高质量沉积膜，（1）RF发生器的振荡频率在该范围内（2）匹配电路和阴极通过传输线连接，并且通过传输线提供RF功率，（3）阴极电极为棒状的导电结构，并且在阴极与传输线的内导体之间的连接部分，阴极的横截面的外形与内导体的横截面的外形相同，（4）至少在传输线的横截面中，阴极和传输线的内部导体之间的连接部分被具有与传输介质的外部形状相同外形的电介质部件覆盖 ne。

10. 发明授权

US06435130B1 Plasma CVD apparatus and plasma processing method 失效
标题翻译：等离子体CVD装置和等离子体处理方法
公开(公告)号：US06435130B1
公开(公告)日：2002-08-20
申请号：US08916540
申请日：1997-08-22
申请人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
发明人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
IPC分类号： C23C16509
CPC分类号： H01J37/32091 , C23C16/24 , C23C16/45578 , C23C16/509 , G03G5/08278
摘要： A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.
摘要翻译：一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式