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11. 发明申请

US20070222885A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20070222885A1
公开(公告)日：2007-09-27
申请号：US11723459
申请日：2007-03-20
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H04N5/225
CPC分类号： H04N5/335
摘要： In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance AH (AV) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance BH (BV) between neighboring vertexes of the disposition region.
摘要翻译：在固态图像拾取装置中，难以将与像素阵列区域的图像高度相对应的最佳入射角与相机透镜的光入射特性相匹配，从而导致由于灵敏度阴影引起的图像质量劣化。各个微透镜以二维方式设置，即以行和列方向布置。特别地，微透镜被布置成使得布置微透镜的布置区域的每一侧相对于连接配置区域的相邻顶点的线具有凹曲线。换句话说，位于配置区域的一对相对侧的中心点之间的距离A（H）将被设定为小于距离B _V）。

12. 发明授权

US07696546B2 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same 失效
标题翻译：具有包括硅化物层的叠层以便降低布线电阻的布线层的固态成像装置及其制造方法
公开(公告)号：US07696546B2
公开(公告)日：2010-04-13
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

13. 发明授权

US07485939B2 Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area 有权
标题翻译：具有缺陷控制层和沟槽与电荷累积区之间的反型层的固态成像装置
公开(公告)号：US07485939B2
公开(公告)日：2009-02-03
申请号：US11435098
申请日：2006-05-17
申请人： Shouzi Tanaka , Ryohei Miyagawa
发明人： Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.
摘要翻译：在（a）沿着沟槽表面形成的用于隔离像素调用的缺陷控制层和（b）光电二极管之间的边界部分中形成反转层。缺陷控制层为P型，光电二极管和反型层为N型。这里，反转层中的杂质浓度至少是光电二极管中杂质浓度的两倍。

14. 发明申请

US20070109432A1 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US20070109432A1
公开(公告)日：2007-05-17
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

15. 发明授权

US4895107A Photo chemical reaction apparatus 失效
标题翻译：照相化学反应装置
公开(公告)号：US4895107A
公开(公告)日：1990-01-23
申请号：US215175
申请日：1988-07-05
申请人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
发明人： Kensaku Yano , Akihiko Furukawa , Ryohei Miyagawa , Yoshinori Iida
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23C16/54 , H01L21/263 , H01L21/31
CPC分类号： C23C16/4409 , C23C16/482 , C23C16/488 , C23C16/54
摘要： A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.
摘要翻译：光化学反应装置包括使用分隔板分隔成反应室的真空容器和载体室。隔板具有开口，承载托盘可以可拆卸地插入该开口中，以使得反作用气室被密封。托盘具有与透光窗相对的基板保持架。反应气体在该窗口和待加工的基板之间流动，安装在基板保持器上。

16. 发明授权

US08723239B2 Solid-state imaging element 有权
标题翻译：固态成像元件
公开(公告)号：US08723239B2
公开(公告)日：2014-05-13
申请号：US12172571
申请日：2008-07-14
申请人： Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
发明人： Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.
摘要翻译：固态成像元件包括形成在半导体衬底的上部以进行光电转换的光电二极管，形成在衬底上以覆盖光电二极管的二氧化硅膜和形成在二氧化硅膜上的氮化硅膜。氮化硅膜的厚度比氮化硅膜的至少一端部分薄，部分地比光电二极管的薄。

17. 发明申请

US20090278181A1 SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20090278181A1
公开(公告)日：2009-11-12
申请号：US12434474
申请日：2009-05-01
申请人： Shouzi TANAKA , Ryohei Miyagawa
发明人： Shouzi TANAKA , Ryohei Miyagawa
IPC分类号： H01L31/112 , H01L21/265
CPC分类号： H01L27/14603 , H01L21/26586 , H01L27/1463 , H01L27/14689
摘要： A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.
摘要翻译：固态图像传感器包括：沟槽隔离区域; 用于将入射光转换为信号电荷并在其中累积信号电荷的光电二极管区域; 用于累积光电二极管区域的信号电荷的浮动扩散区域; 栅电极，形成在位于光电二极管区域和浮动扩散区域之间的元件形成区域上，并且形成为使得栅电极的两端分别与光电二极管区域的一部分和浮动扩散区域的一部分重叠; 以及形成在位于沟槽隔离区域的底部和侧壁部分中的区域中的非活性层。在非活性层中位于栅电极下方的区域中的杂质浓度低于非活性层中位于栅电极下方的区域以外的区域中的杂质浓度。

18. 发明授权

US07567281B2 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US07567281B2
公开(公告)日：2009-07-28
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

19. 发明申请

US20070111359A1 Solid-state image pickup device and method for manufacturing the same 审中-公开
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US20070111359A1
公开(公告)日：2007-05-17
申请号：US11590794
申请日：2006-11-01
申请人： Mikiya Uchida , Ryohei Miyagawa
发明人： Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14689
摘要： Realized are a solid-state image pickup device whose element patterns are miniaturized and a method for manufacturing the solid-state image pickup device, in which furnace-annealing is employed without performing a process of nitriding a gate oxide film and a rapid thermal treatment in main heat treatment processes. The method for manufacturing the solid-state image pickup device according to the present invention comprises the steps of forming respective gate insulating films of an N-channel transistor and a P-channel transistor by thermally oxidizing a semiconductor substrate; forming a gate electrode of the P-channel transistor and forming a gate electrode of the N-channel transistor so as to have a minimum gate length equal to or less than 0.3 μm; implanting impurity into the semiconductor substrate utilizing the gate electrodes as a mask; and furnace-annealing the semiconductor substrate having the impurity implanted thereinto.
摘要翻译：实现了其元件图案小型化的固态图像拾取装置和用于制造固态图像拾取装置的方法，其中在不进行氮化栅极氧化膜的工艺和快速热处理的情况下使用炉退火主要热处理工艺。根据本发明的固体摄像装置的制造方法包括以下步骤：通过热氧化半导体衬底形成N沟道晶体管和P沟道晶体管的各个栅极绝缘膜; 形成所述P沟道晶体管的栅极，并形成所述N沟道晶体管的栅电极，使其栅极长度等于或小于0.3μm; 使用栅电极作为掩模将杂质注入半导体衬底; 并对其中注入杂质的半导体衬底进行炉退火。

20. 发明授权

US06617625B2 Solid state imager 失效
标题翻译：固态成像仪具有降低的漏电流
公开(公告)号：US06617625B2
公开(公告)日：2003-09-09
申请号：US09886993
申请日：2001-06-25
申请人： Ryohei Miyagawa
发明人： Ryohei Miyagawa
IPC分类号： H01L31062
CPC分类号： H01L27/14609 , H01L27/1463
摘要： A device region surrounded by a device isolation region has a rectangular shape with a width in a direction in which a gate electrode of a transfer gate extends. A signal accumulation region of a photodiode is disposed on the entirety of that portion of the device region, which is located on a source side of the gate electrode of the transfer gate. A detection section having a width in the direction in which the gate electrode extends is disposed on that portion of the device region, which is located on a drain side of the gate electrode of the transfer gate. The size of the detection section is set to be as small as possible. Two edge portions of the detection section, which are located in the direction of extension of the gate electrode, are spaced apart from the device isolation region.
摘要翻译：由器件隔离区域围绕的器件区域具有在转移栅极的栅电极延伸的方向上具有宽度的矩形形状。光电二极管的信号存储区域设置在位于传输门的栅电极的源极侧的器件区域的整个部分上。具有栅极延伸方向的宽度的检测部分设置在位于传输门的栅电极的漏极侧的器件区域的该部分上。检测部的尺寸尽可能小。位于栅极延伸方向上的检测部分的两个边缘部分与器件隔离区间隔开。

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