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11. 发明申请

US20080099110A1 ROLLED COPPER FOIL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：卷绕铜箔及其制造方法
公开(公告)号：US20080099110A1
公开(公告)日：2008-05-01
申请号：US11682943
申请日：2007-03-07
申请人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
发明人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
IPC分类号： C22F1/08 , C22C9/02
CPC分类号： H05K1/09 , C22C9/02 , C22F1/08 , H05K1/0393 , H05K2201/0355 , H05K2203/0143 , H05K2203/1105 , Y10T428/12431
摘要： A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]≧3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by β-scanning at α=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.
摘要翻译：在最终冷轧步骤之后进行再结晶退火并且具有满足[a] / [b]> = 3的比例的晶粒取向的轧制铜箔，其中[a]和[b]是a的平均强度通过在对于轧制表面的X射线衍射极数测量中分别在α= 35°和74°下的β扫描的铜晶体的{111} Cu / 再结晶退火前的最终冷轧工序中的总加工率为94％以上; 并且在最终冷轧步骤中将每一道次的加工率控制为15〜50％。

12. 发明授权

US06399517B2 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US06399517B2
公开(公告)日：2002-06-04
申请号：US09281689
申请日：1999-03-30
申请人： Kenji Yokomizo , Tom Williams
发明人： Kenji Yokomizo , Tom Williams
IPC分类号： H01L21302
CPC分类号： H01L21/67086 , H01L21/31111
摘要： An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.
摘要翻译：提供蚀刻方法和蚀刻装置。从表面半导体晶片W的硅（Si）溶解到存储在处理槽10中的蚀刻液体E.在通过浓度传感器50检测到硅的浓度时，处理浴10中的蚀刻液体E被排出，当蚀刻液体E中的Si浓度达到指定浓度时，之后，将基本上等于排出的蚀刻液体E的量的新的蚀刻液供给到处理槽10中，并与残留在槽10中的蚀刻液相加。因此，可以限制刚好在蚀刻液的交换过度上升。

13. 发明授权

US5327921A Processing vessel for a wafer washing system 失效
标题翻译：晶圆清洗系统的加工容器
公开(公告)号：US5327921A
公开(公告)日：1994-07-12
申请号：US26016
申请日：1993-03-04
申请人： Shouri Mokuo , Kenji Yokomizo , Osamu Tanaka
发明人： Shouri Mokuo , Kenji Yokomizo , Osamu Tanaka
IPC分类号： H01L21/00 , B08B3/04
CPC分类号： H01L21/67057 , Y10S134/902
摘要： A processing vessel suitable for use with a washing system intended to wash a plurality of wafers. The processing vessel includes a washing solution supply source, a circulation pump, a filter, a main vessel portion provided with inlets in the bottom thereof, a boat for holding the plurality of wafers in the center area of the main vessel portion and a flow control assembly arranged between the inlets and the wafers. The flow control assembly includes a scattering plate for scattering washing solution, which is introduced into the main vessel portion through the inlets, in the horizontal direction, and guiding passages through which the washing solution introduced through the inlets is made to have a substantially laminar flow and is guided into the center area of the main vessel portion. The guiding passages are formed by intervals between side plates and the scattering plate and by a plurality of apertures in the scattering plate. These guiding passages enable most of the washing solution to positively flow through spaces between the adjacent wafers. The flow control assembly also include a flow rate reducing section for reducing the amount of the washing solution which flows along the peripheral area of the wafers.
摘要翻译：适于与洗涤系统一起使用以用于洗涤多个晶片的处理容器。处理容器包括洗涤液供给源，循环泵，过滤器，在其底部设有入口的主容器部分，用于将多个晶片保持在主容器部分的中心区域中的船，以及流量控制组件布置在入口和晶片之间。流量控制组件包括用于散射洗涤溶液的散射板，其通过入口沿水平方向被引入主容器部分中，并且引导通道使通过入口引入的洗涤溶液具有基本层流并被引导到主容器部分的中心区域。引导通道由侧板和散射板之间的间隔和散射板中的多个孔形成。这些引导通道使得大部分洗涤液能够积极地流过相邻晶片之间的空间。流量控制组件还包括用于减少沿着晶片的周边区域流动的洗涤溶液的量的流量减小部分。

14. 发明授权

US5297910A Transportation-transfer device for an object of treatment 失效
标题翻译：用于治疗对象的运输转运装置
公开(公告)号：US5297910A
公开(公告)日：1994-03-29
申请号：US834819
申请日：1992-02-13
申请人： Kazutoshi Yoshioka , Kenji Yokomizo , Masami Akimoto , Yuji Yoshimoto
发明人： Kazutoshi Yoshioka , Kenji Yokomizo , Masami Akimoto , Yuji Yoshimoto
IPC分类号： H01L21/00 , H01L21/673 , H01L21/677 , B65H5/08
CPC分类号： H01L21/67173 , H01L21/67742 , H01L21/67754 , Y10S414/135 , Y10S414/137
摘要： A device for transporting and transferring objects of treatment arranged in a down flow to a plurality of treatment sections for treating the objects comprises a transportation section movable between the treatment sections, a first drive mechanism for moving the transportation section, a first arm movably attached to the transportation section and used for those objects of treatment which are adjusted to a predetermined temperature in the treatment sections, a second arm movably attached to the transportation section and used for the other objects of treatment than the ones adjusted in temperature, and a second drive mechanism for separately moving the first and second arms.
摘要翻译：一种用于输送和传送处理物体的装置，用于将处理物体输送到多个用于处理物体的处理部分的处理部分包括可在处理部分之间移动的传送部分，用于移动传送部分的第一驱动机构，可移动地附接到所述输送部用于在所述处理部中被调整为规定温度的所述处理对象物，所述第二臂可移动地安装于所述输送部并用于所述其他治疗对象，而不是温度调节对象的第二驱动用于分别移动第一和第二臂的机构。

15. 发明申请

US20100319734A1 LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：液体加工设备，液体加工方法和储存介质
公开(公告)号：US20100319734A1
公开(公告)日：2010-12-23
申请号：US12634942
申请日：2009-12-10
申请人： Teruomi MINAMI , Fumihiro Kamimura , Kazuki Kosai , Takashi Yabuta , Kenji Yokomizo , Shogo Mizota
发明人： Teruomi MINAMI , Fumihiro Kamimura , Kazuki Kosai , Takashi Yabuta , Kenji Yokomizo , Shogo Mizota
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , H01L21/6708
摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.
摘要翻译：在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜并且提供用于洗涤破碎的第二膜的碎屑的流体。控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

16. 发明授权

US07842397B2 Nickel plating solution and its preparation method, nickel plating method and printed wiring board copper foil 有权
标题翻译：镀镍液及其制备方法，镀镍法和印刷线路板铜箔
公开(公告)号：US07842397B2
公开(公告)日：2010-11-30
申请号：US11524781
申请日：2006-09-21
申请人： Yasuyuki Ito , Katsuyuki Matsumoto , Koji Nukaga , Yasuhiro Kusano , Kenji Yokomizo , Shingo Watanabe , Hiroyuki Ogawara , Katsumi Nomura
发明人： Yasuyuki Ito , Katsuyuki Matsumoto , Koji Nukaga , Yasuhiro Kusano , Kenji Yokomizo , Shingo Watanabe , Hiroyuki Ogawara , Katsumi Nomura
IPC分类号： B32B15/20 , H05K1/03 , C25D3/12 , C25D7/06
CPC分类号： C25D3/12 , C25D3/562 , H05K3/384 , H05K3/389 , H05K2201/0355 , H05K2203/0307 , H05K2203/0723 , Y10S428/935 , Y10T428/12438 , Y10T428/12472 , Y10T428/12569 , Y10T428/12611 , Y10T428/12792 , Y10T428/1291
摘要： A nickel plating solution preparation method has the steps of: dissolving in water 100 g/L or more and less than 200 g/L of nickel sulfate, and 10 g/L or more and less than 30 g/L of sodium citrate or 8 g/L or more and less than 25 g/L of citric acid, but adding no nickel chloride; and adjusting a pH of the resultant solution to 2 or more and less than 4. Another nickel plating solution preparation method has the steps of: dissolving in water 100 g/L or more and less than 200 g/L of nickel sulfate, and 10 g/L or more and less than 30 g/L of sodium citrate or 8 g/L or more and less than 25 g/L of citric acid, but adding no boric acid; and adjusting a pH of the resultant solution to 2 or more and less than 4.
摘要翻译：镍镀液制备方法的步骤为：将100g / L以上且小于200g / L的硫酸镍和10g / L以上且小于30g / L的柠檬酸钠或8 g / L以上且小于25g / L的柠檬酸，但不添加氯化镍; 并将所得溶液的pH调节至2以上且小于4.另一种镀镍溶液制备方法具有以下步骤：将100g / L以上且小于200g / L的硫酸镍溶解于水中，将10 g / L以上且小于30g / L的柠檬酸钠或8g / L以上且小于25g / L的柠檬酸，但不添加硼酸; 并将所得溶液的pH调节至2以上且小于4。

17. 发明申请

US20100255970A1 METAL FOIL MACHINING ROLLER 审中-公开
标题翻译：金属机械加工机
公开(公告)号：US20100255970A1
公开(公告)日：2010-10-07
申请号：US12679154
申请日：2008-11-21
申请人： Yasutaka Kogetsu , Takuhiro Nishimura , Hiroaki Takano , Kenji Yokomizo
发明人： Yasutaka Kogetsu , Takuhiro Nishimura , Hiroaki Takano , Kenji Yokomizo
IPC分类号： B21B27/02
CPC分类号： B21B27/021 , B21B1/227 , B21B1/40 , B21H8/00
摘要： A metal foil machining roller of the present invention is a metal foil machining roller in which a plurality of recessed portions are formed on a circumferential surface of the roller, wherein at least a surface layer portion contains a metal material with a Rockwell hardness in A scale of HRA 81.2 to 90.0 and a transverse rupture strength of 3 GPa to 6 GPa. By pressure-molding a metal foil by using the metal foil machining roller, protrusion portions of an approximately uniform shape with dimensions of several microns to several tens of microns can be formed efficiently on a surface of the metal foil on an industrial scale.
摘要翻译：本发明的金属箔加工辊是金属箔加工辊，其中在辊的圆周表面上形成有多个凹部，其中至少表面层部分包含具有A尺度的洛氏硬度的金属材料的HRA 81.2至90.0，横向断裂强度为3GPa至6GPa。通过使用金属箔加工辊对金属箔进行加压成型，可以在工业规模上有效地在金属箔的表面上形成尺寸为几微米到几十微米的大致均匀形状的突起部分。

18. 发明授权

US07789977B2 Rolled copper foil and manufacturing method thereof 有权
标题翻译：轧制铜箔及其制造方法
公开(公告)号：US07789977B2
公开(公告)日：2010-09-07
申请号：US11682943
申请日：2007-03-07
申请人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
发明人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
IPC分类号： C22C9/00 , C22F1/08
CPC分类号： H05K1/09 , C22C9/02 , C22F1/08 , H05K1/0393 , H05K2201/0355 , H05K2203/0143 , H05K2203/1105 , Y10T428/12431
摘要： A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]≧3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by β-scanning at α=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.
摘要翻译：在最终冷轧步骤之后进行再结晶退火并且具有满足[a] / [b]≥3的比例的晶粒取向的轧制铜箔，其中[a]和[b]是{ 111}在X射线衍射极数测量中，通过在最终冷中控制总的工作比来制造在α= 35°和74°的铜晶体的Cu平面衍射再结晶退火前的轧制步骤为94％以上; 并且在最终冷轧步骤中将每一道次的加工率控制为15〜50％。

19. 发明授权

US06558476B2 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US06558476B2
公开(公告)日：2003-05-06
申请号：US09777106
申请日：2001-02-05
申请人： Kenji Yokomizo
发明人： Kenji Yokomizo
IPC分类号： B08B304
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A substrate processing method of the present invention prevents the reattachment of particles to substrates, such as semiconductor wafers, when processing and cleaning the substrates by immersing the substrates held in a vertical attitude in a processing liquid and a cleaning liquid. After processing the substrates in the processing liquid, they are drawn out from the processing liquid. Then, lower parts of the processed substrates are immersed in the cleaning liquid and temporarily kept stationary in the cleaning liquid. Alternatively, the cleaning liquid is sprayed onto the lower parts of the processed substrates. After a predetermined time, the substrates are immersed entirely in the cleaning liquid.
摘要翻译：本发明的基板处理方法通过将以垂直姿势保持的基板浸渍在处理液体和清洗液中来处理和清洁基板时，防止颗粒重新附着到诸如半导体晶片的基板上。处理液中的基材后，从处理液中取出。然后，将处理后的基板的下部浸渍在清洗液中，暂时保持在清洗液中。或者，将清洁液体喷涂到被处理基板的下部。在预定时间之后，基板全部浸没在清洗液中。

20. 发明申请

US20100291402A1 ROLLED COPPER FOIL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：卷绕铜箔及其制造方法
公开(公告)号：US20100291402A1
公开(公告)日：2010-11-18
申请号：US12846865
申请日：2010-07-30
申请人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
发明人： Takemi Muroga , Yasuyuki Ito , Koji Aoyagi , Yoshiki Yamamoto , Kenji Yokomizo , Katsumi Nomura
IPC分类号： B32B15/20
CPC分类号： H05K1/09 , C22C9/02 , C22F1/08 , H05K1/0393 , H05K2201/0355 , H05K2203/0143 , H05K2203/1105 , Y10T428/12431
摘要： A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]≧3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by β-scanning at α=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.
摘要翻译：在最终冷轧步骤之后进行再结晶退火并且具有满足[a] / [b]≥3的比例的晶粒取向的轧制铜箔，其中[a]和[b]是{ 111}在X射线衍射极数测量中，通过在最终冷中控制总的工作比来制造在α= 35°和74°的铜晶体的Cu平面衍射再结晶退火前的轧制步骤为94％以上; 并且在最终冷轧步骤中将每一道次的加工率控制为15〜50％。

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