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    • 11. 发明授权
    • Method for manufacturing multilayer ceramic capacitor
    • 多层陶瓷电容器制造方法
    • US07335328B2
    • 2008-02-26
    • US10502602
    • 2003-10-24
    • Kazuki HirataKenji OkaKazuhiro KomatsuAtsuo Nagai
    • Kazuki HirataKenji OkaKazuhiro KomatsuAtsuo Nagai
    • H01G4/00C04B33/32
    • H01G4/30H01G4/1227
    • A method of manufacturing a multilayer ceramic capacitor includes the steps of: preparing a mixture of a raw material powder mainly composed of barium titanate particles; forming the mixture and a binder into a green sheet; alternately layering the green sheet and an internal electrode to obtain a laminated body; and sintering the laminated body. The step of preparing the mixture includes the steps of: introducing the raw material powder and the dispersion medium into a mixing container, and stirring them with balls serving as a mixing medium, to obtain a slurry containing a raw material powder mixture; and drying the slurry. The mixing medium has a diameter that is equal to or less than 400 times the mean particle size of the barium titanate particles of the raw material. The present invention provides a multilayer ceramic capacitor having good DC bias characteristics by suppressing the variation in crystal particles.
    • 制造多层陶瓷电容器的方法包括以下步骤:制备主要由钛酸钡颗粒组成的原料粉末的混合物; 将所述混合物和粘合剂形成生片; 交替层叠生片和内部电极以获得层压体; 并烧结层叠体。 制备混合物的步骤包括以下步骤:将原料粉末和分散介质引入混合容器中,并用作为混合介质的滚珠搅拌,得到含有原料粉末混合物的浆料; 并干燥浆料。 混合介质的直径等于或小于原料的钛酸钡颗粒的平均粒度的400倍。 本发明通过抑制晶体颗粒的变化来提供具有良好DC偏置特性的多层陶瓷电容器。
    • 13. 发明授权
    • Method and device for distance measurement by pulse radar
    • 脉冲雷达测距方法及装置
    • US07233279B2
    • 2007-06-19
    • US11019378
    • 2004-12-23
    • Masayoshi MoriyaSatoshi IshiiTetsuo SekiKazuaki HamadaKenji OkaAkihiro Ohta
    • Masayoshi MoriyaSatoshi IshiiTetsuo SekiKazuaki HamadaKenji OkaAkihiro Ohta
    • G01S13/08G01S13/12
    • G01S13/20G01S13/18G01S13/227G01S13/24
    • In order to provide the method and the device for distance measurement by pulse radar that securely eliminates the false echo from the distance over the detectable limit determined by the pulse generation cycle, the pulse radar comprises the pulse signal sending unit that generates the pulse signals with different cycles at OSC 9a˜9c, switches to the predetermined intervals by OSC switch 10, and sends the pulse signal to targets, the reflected signal receiving unit that receives the reflected signals and stores the data in the RAM 25, the reflected signal data acquisition unit that obtains the data of each reflected signal, and the reflected signal identification unit that compares the intensity of the reflected signals obtained at the same lag time point during a certain time period after sending the pulse signal for reference and identifies the reflected signals of the sent pulse signal for reference.
    • 为了提供通过脉冲雷达进行距离测量的方法和装置,从脉冲发生周期确定的可检测限度的距离安全地消除假回波,脉冲雷达包括产生脉冲信号的脉冲信号发送单元, 在OSC 9 a〜9 c处的不同周期,由OSC开关10切换到预定间隔,并将脉冲信号发送到目标,反射信号接收单元接收反射信号并将数据存储在RAM 25中,反射信号 数据获取单元,其获得每个反射信号的数据;以及反射信号识别单元,其在发送用于参考的脉冲信号之后的特定时间段内比较在相同滞后时间点获得的反射信号的强度,并且识别反射信号 的发送脉冲信号供参考。
    • 14. 发明授权
    • Method and apparatus for picking up 2D image of an object to be sensed
    • 拾取被感测物体的2D图像的方法和装置
    • US07221486B2
    • 2007-05-22
    • US10265659
    • 2002-10-08
    • Hiroshi MakihiraShunji MaedaKenji OkaMinoru YoshidaYasuhiko Nakayama
    • Hiroshi MakihiraShunji MaedaKenji OkaMinoru YoshidaYasuhiko Nakayama
    • H04N1/04
    • G06T7/0004G06T2207/30148
    • A method and apparatus for sensing by a linear image sensor a two-dimensional image of an object to be sensed includes detecting a position of the object by a position sensor having a first resolution, picking up an image of the object being projected in a direction (V-scan direction) generally perpendicular to an internal scan (H-scan) direction of the linear image sensor in synchronism with relative movement between the object and the linear image sensor, periodically switching a pixel size along the V-scan direction between a plurality of predefined pixel sizes during the relative movement between the object and the linear image sensor in accordance with information of the relative movement detected by the position sensor, and producing from an output of the linear image sensor a two-dimensional image of the projected image having a second resolution of the object to be sensed. The second resolution is a higher resolution than the first resolution.
    • 一种用于通过线性图像传感器检测待检测物体的二维图像的方法和装置包括通过具有第一分辨率的位置传感器检测物体的位置,拾取沿着方向投影的物体的图像 (V扫描方向),与物体和线性图像传感器之间的相对运动同步地与线性图像传感器的内部扫描(H扫描)方向大致垂直,周期性地沿着V扫描方向切换像素尺寸, 根据由位置传感器检测到的相对运动的信息,在物体和线性图像传感器之间的相对运动期间的多个预定像素尺寸,并且从线性图像传感器的输出产生投影图像的二维图像 具有要被感测的物体的第二分辨率。 第二项决议是比第一项决议更高的决议。
    • 16. 发明授权
    • Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected
    • 半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
    • US07180584B2
    • 2007-02-20
    • US10686584
    • 2003-10-17
    • Shunji MaedaYasuhiko NakayamaMinoru YoshidaHitoshi KubotaKenji Oka
    • Shunji MaedaYasuhiko NakayamaMinoru YoshidaHitoshi KubotaKenji Oka
    • G01N21/00
    • G01N21/8806G01N21/9501G01N21/956G01N21/95607G01N2021/95615G01N2201/0618G01N2201/0634
    • A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
    • 一种用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法及其装置以及以高产率制造半导体晶片等半导体基板的半导体基板的制造方法和系统。 通过将通过物镜的环形照明照射到安装在台架上的晶片上,检查被检查物体上的微细图案,晶片上具有微细精细图案。 照明光可以根据在物镜的光瞳上检测到的图像而被圆形或椭圆偏振并且被控制,并且通过检测来自晶片的反射光来获得图像信号。 将图像信号与参考图像信号进行比较,并且检测出显示不一致的图案的一部分作为缺陷,从而同时以高分辨率检测微细微图案或微细图案上的缺陷。 此外,通过分析缺陷的原因和在图案上发生的缺陷因素来控制生产线的工艺条件。