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11. 发明授权

US06739854B1 Method and system for treating a power transmission belt/belt sleeve 失效
标题翻译：用于处理动力传动皮带/皮带套的方法和系统
公开(公告)号：US06739854B1
公开(公告)日：2004-05-25
申请号：US09008675
申请日：1998-01-16
申请人： Akihiro Nagata , Toshiaki Aragane , Takashi Hamada , Yoshiki Matsuura
发明人： Akihiro Nagata , Toshiaki Aragane , Takashi Hamada , Yoshiki Matsuura
IPC分类号： B29D2900
CPC分类号： B29D29/06
摘要： A method of treating a power transmission belt/belt sleeve of the type having an endless body with a length extending around an axis and a radially inwardly facing surface and a radially outwardly facing surface. The method includes the steps of wrapping at least one sheet of vapor-impervious film against and around the radially outwardly facing surface of the belt/belt sleeve body and vulcanizing the belt/belt sleeve with the at least one sheet of vapor-impervious film wrapped around the belt/belt sleeve body.
摘要翻译：一种处理这种类型的动力传动皮带/皮带套的方法，该动力传动带/皮带套具有环形体，其长度围绕轴线和径向向内表面和径向向外表面延伸。该方法包括以下步骤：将至少一层不透气的薄膜包裹在皮带/皮带套筒主体的径向向外的表面上和周围，并用带子/皮带套筒硫化所述至少一片不透气薄膜围绕皮带/皮带袖体。

12. 发明授权

US06713323B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06713323B2
公开(公告)日：2004-03-30
申请号：US10058158
申请日：2002-01-29
申请人： Shunpei Yamazaki , Osamu Nakamura , Takashi Hamada , Satoshi Murakami
发明人： Shunpei Yamazaki , Osamu Nakamura , Takashi Hamada , Satoshi Murakami
IPC分类号： H01L21339
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device is manufactured by a method in which the number of heat treatments at a high temperature (600° C. or higher) is reduced to thereby achieve a process at a low temperature (600° C. or lower), and a simplified process and improvement in throughput are realized. An impurity region to which a rare gas element (also called a rare gas) is added is formed on a semiconductor film of a crystalline structure by using a mask. Gettering is performed in such a manner that a metallic element contained in the semiconductor film is caused to segregate in the impurity region by heat treatment. The impurity region is thereafter used as a source or drain region.
摘要翻译：通过如下方法制造半导体器件：在高温（600℃以上）下进行热处理的数量减少，从而达到低温（600℃以下）的工序，简化了实现了吞吐量的处理和改进。通过使用掩模，在结晶结构的半导体膜上形成添加稀有气体元素（也称为稀有气体）的杂质区域。以使得包含在半导体膜中的金属元素通过热处理在杂质区域中分离的方式进行吸气。此后，杂质区域用作源区或漏区。

13. 发明授权

US06599785B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US06599785B2
公开(公告)日：2003-07-29
申请号：US10078414
申请日：2002-02-21
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L2100
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

14. 发明授权

US6092228A Message receiving apparatus and message transmitting and receiving method 失效
标题翻译：消息接收装置和消息发送和接收方法
公开(公告)号：US6092228A
公开(公告)日：2000-07-18
申请号：US782165
申请日：1997-01-14
申请人： Noriko Tanaka , Hiroshi Uranaka , Takashi Hamada
发明人： Noriko Tanaka , Hiroshi Uranaka , Takashi Hamada
IPC分类号： H04W88/02 , H04W88/18 , G06F11/00
CPC分类号： H04W88/185 , H04W88/022
摘要： A signal 101 from a transmitting station includes: an address 102 specific to a message receiving apparatus; a specific message 103 that is an advance notice indicating receipt of a large-volume message; and a message main body 105. The message receiving apparatus includes: a receiving section 11 that outputs a data string by demodulating the signal 101; a decoder 13 that subjects the data string to an error correcting process, converts the corrected data string into a message, and makes an address collation; an analyzer 14 that analyzes the message and outputs a control signal to a total control section 16 if the analyzed message is a specific message; a buffer 15 that stores a message main body; and the total control section 16 that stops a peripheral device section 17 in accordance with signals obtained from the decoder and the analyzer and controls display by sending a message in the buffer 15 to the peripheral device section 17.
摘要翻译：来自发送站的信号101包括：特定于消息接收装置的地址102; 作为指示接收大容量消息的提前通知的特定消息103; 和消息主体105.消息接收装置包括：接收部分11，通过解调信号101来输出数据串; 对数据串进行纠错处理的解码器13将校正后的数据串变换为消息，进行地址整理; 如果分析的消息是特定消息，则分析器14分析消息并将控制信号输出到总控制部分16; 存储消息主体的缓冲器15; 以及总控制部分16，其根据从解码器和分析器获得的信号停止外围设备部分17，并通过在缓冲器15中向外围设备部分17发送消息来控制显示。

15. 发明授权

US5636081A Magnetic disc apparatus and magnetic disc 失效
标题翻译：磁盘装置和磁盘
公开(公告)号：US5636081A
公开(公告)日：1997-06-03
申请号：US307996
申请日：1994-09-16
申请人： Teruyoshi Higashiya , Tuneyuki Hasegawa , Masayuki Katsumoto , Yuichi Otani , Mituhiko Oguchi , Hiroyuki Sugimoto , Tetsuji Higashijima , Takashi Hamada , Kinya Eguchi , Hideaki Amano
发明人： Teruyoshi Higashiya , Tuneyuki Hasegawa , Masayuki Katsumoto , Yuichi Otani , Mituhiko Oguchi , Hiroyuki Sugimoto , Tetsuji Higashijima , Takashi Hamada , Kinya Eguchi , Hideaki Amano
IPC分类号： G11B33/12 , G11B5/012 , G11B5/72 , G11B5/725 , G11B25/04 , G11B33/14 , G11B17/00
CPC分类号： G11B5/012 , G11B33/1446 , G11B33/1453
摘要： A magnetic disc apparatus includes a casing for defining a sealed space, a magnetic disc disposed within the space, a spindle to which the magnetic disc is fixed, a motor for rotating the spindle, a flying head slider for writing and/or reading information in and/or from the magnetic disc and a carriage for translating the flying head slider. The magnetic disc apparatus incorporates an organic chemical compound capable of suppressing siloxane from being chemically changed to silicon oxide. The organic chemical compound contains at least one of monoalkyl-substituted benzene, dialkyl-substituted benzene, trialkyl-substituted benzene, fatty acid, fatty ester, alkyl ester of aromatic acid, thiazoles and phenols.
摘要翻译：磁盘装置包括用于限定密封空间的壳体，设置在该空间内的磁盘，固定有磁盘的主轴，用于旋转主轴的电动机，用于将信息写入和/或读取信息的飞头滑块和/或来自磁盘和用于平移飞头滑块的滑架。磁盘装置包含能够抑制硅氧烷化学改变为氧化硅的有机化合物。有机化合物包含单烷基取代的苯，二烷基取代的苯，三烷基取代的苯，脂肪酸，脂肪酸酯，芳族酸的烷基酯，噻唑和酚中的至少一种。

16. 发明授权

US08570256B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US08570256B2
公开(公告)日：2013-10-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30 , H01L21/70
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

17. 发明授权

US08426231B2 Method for manufacturing semiconductor device including a photoelectric conversion element 有权
标题翻译：包括光电转换元件的半导体器件的制造方法
公开(公告)号：US08426231B2
公开(公告)日：2013-04-23
申请号：US12857820
申请日：2010-08-17
申请人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
发明人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
IPC分类号： H01L31/18
CPC分类号： H01L31/103 , H01L27/14643 , H01L31/105 , H01L31/1804 , H01L31/1864 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.
摘要翻译：所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

18. 发明授权

US08283862B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08283862B2
公开(公告)日：2012-10-09
申请号：US12905568
申请日：2010-10-15
申请人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
发明人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
IPC分类号： H05B33/22
CPC分类号： H01L27/3258 , H01L21/31608 , H01L27/3246 , H01L27/3276 , H01L51/5206 , H01L51/5218 , H01L51/5246 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323
摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
摘要翻译：本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便实现了具有高稳定性的发光器件。除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。因此，获得了对发光器件的可靠性的协同效应。

19. 发明授权

US08105855B2 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08105855B2
公开(公告)日：2012-01-31
申请号：US12533338
申请日：2009-07-31
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01L27/3211 , H01L51/0005 , H01L51/0021 , H01L51/56 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
摘要翻译：提供一种制造发光器件的方法，其需要低成本，容易并且具有高生产量。制造发光器件的方法的特征在于：将含有发光材料的溶液在减压下喷射到阳极或阴极; 溶液中的溶剂挥发，直到溶液到达阳极或阴极; 并且剩余的发光材料沉积在阳极或阴极上以形成发光层。在施加溶液后，不需要用于降低膜厚度的燃烧步骤。因此，可以提供需要低成本且容易但具有高生产量的制造方法。

20. 发明授权

US07922554B2 Production apparatus and method of producing a light-emitting device by using the same apparatus 有权
标题翻译：通过使用相同的装置制造发光装置的制造装置和方法
公开(公告)号：US07922554B2
公开(公告)日：2011-04-12
申请号：US12576694
申请日：2009-10-09
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01J9/00
CPC分类号： H01L51/0005
摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.
摘要翻译：本发明涉及一种制造发光器件的方法。进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行范围为0至30°。

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