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1. 发明授权

US08017951B2 Semiconductor device including a conductive film having a tapered shape 有权
标题翻译：包括具有锥形形状的导电膜的半导体装置
公开(公告)号：US08017951B2
公开(公告)日：2011-09-13
申请号：US12424807
申请日：2009-04-16
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.
摘要翻译：使用少量的光掩模获得对像素部分和驱动电路的驱动条件最佳的TFT结构。第一至第三半导体膜形成在第一绝缘膜上。第一形状的第一，第二和第三电极形成在第一至第三半导体膜上。在第一掺杂处理中，第一形状的第一，第二，第三电极用作掩模，以在第一至第三半导体膜中形成一种导电类型的第一浓度杂质区。第二形状的第一，第二和第三电极由第一形状的第一，第二和第三电极形成。在第二掺杂处理中，在第二半导体膜中形成与第二形状的第二电极重叠的一种导电类型的第二浓度杂质区。在第二掺杂处理中也形成为放置在第一和第二半导体膜中的一种导电类型的第三浓度杂质区。在第三掺杂处理中，在第三半导体膜中形成具有与一种导电类型相反的另一导电类型的第四和第五浓度杂质区。

2. 发明授权

US06599785B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US06599785B2
公开(公告)日：2003-07-29
申请号：US10078414
申请日：2002-02-21
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L2100
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

3. 发明授权

US08242508B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08242508B2
公开(公告)日：2012-08-14
申请号：US13226803
申请日：2011-09-07
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L27/01 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.
摘要翻译：半导体器件包括薄膜晶体管。薄膜晶体管包括在基板上的半导体膜，其中半导体膜包括一对第一区域，插入在该对第一区域之间的一对第二区域和插入在该对第二区域之间的沟道形成区域。一对第二区域中的杂质浓度小于该对第一区域中的杂质浓度。薄膜晶体管包括绝缘膜，其中绝缘膜的一部分设置在半导体膜上。薄膜晶体管在该部分上包括导电膜，并且导电膜包括锥形。

4. 发明授权

US06979603B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06979603B2
公开(公告)日：2005-12-27
申请号：US10422829
申请日：2003-04-25
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L29/786 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L21/00
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.
摘要翻译：使用少量的光掩模获得对像素部分和驱动电路的驱动条件最佳的TFT结构。第一至第三半导体膜形成在第一绝缘膜上。第一形状的第一，第二和第三电极形成在第一至第三半导体膜上。在第一掺杂处理中，第一形状的第一，第二，第三电极用作掩模，以在第一至第三半导体膜中形成一种导电类型的第一浓度杂质区。第二形状的第一，第二和第三电极由第一形状的第一，第二和第三电极形成。在第二掺杂处理中，在第二半导体膜中形成与第二形状的第二电极重叠的一种导电类型的第二浓度杂质区。在第二掺杂处理中也形成为放置在第一和第二半导体膜中的一种导电类型的第三浓度杂质区。在第三掺杂处理中，在第三半导体膜中形成具有与一种导电类型相反的另一导电类型的第四和第五浓度杂质区。

5. 发明授权

US07531839B2 Display device having driver TFTs and pixel TFTs formed on the same substrate 有权
标题翻译：具有形成在同一基板上的驱动TFT和像素TFT的显示装置
公开(公告)号：US07531839B2
公开(公告)日：2009-05-12
申请号：US11288218
申请日：2005-11-29
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L27/13
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.
摘要翻译：使用少量的光掩模获得对像素部分和驱动电路的驱动条件最佳的TFT结构。第一至第三半导体膜形成在第一绝缘膜上。第一形状的第一，第二和第三电极形成在第一至第三半导体膜上。在第一掺杂处理中，第一形状的第一，第二，第三电极用作掩模，以在第一至第三半导体膜中形成一种导电类型的第一浓度杂质区。第二形状的第一，第二和第三电极由第一形状的第一，第二和第三电极形成。在第二掺杂处理中，在第二半导体膜中形成与第二形状的第二电极重叠的一种导电类型的第二浓度杂质区。在第二掺杂处理中也形成为放置在第一和第二半导体膜中的一种导电类型的第三浓度杂质区。在第三掺杂处理中，在第三半导体膜中形成具有与一种导电类型相反的另一导电类型的第四和第五浓度杂质区。

6. 发明申请

US20060289865A1 Method of manufacturing a semiconductor device 有权
公开(公告)号：US20060289865A1
公开(公告)日：2006-12-28
申请号：US11288218
申请日：2005-11-29
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

7. 发明授权

US09030298B2 Thin semiconductor device and operation method of thin semiconductor device 有权
标题翻译：薄型半导体器件及薄型半导体器件的操作方法
公开(公告)号：US09030298B2
公开(公告)日：2015-05-12
申请号：US13424737
申请日：2012-03-20
申请人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
发明人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
IPC分类号： G06K9/00 , H01L23/66 , G06K19/07 , G06K7/00 , G06K19/077
CPC分类号： G06K19/072 , G06K7/0008 , G06K19/0723 , G06K19/07718 , G06K19/07749
摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.
摘要翻译：本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或接收，存储器，通信装置，通信规则等。根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息存储器确定薄膜集成电路中的哪一个通信。

8. 发明授权

US08896049B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08896049B2
公开(公告)日：2014-11-25
申请号：US12751300
申请日：2010-03-31
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L29/788 , H01L27/115 , H01L21/84 , H01L27/12 , H01L29/76
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

9. 发明授权

US08659014B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08659014B2
公开(公告)日：2014-02-25
申请号：US13174980
申请日：2011-07-01
申请人： Tatsuya Honda , Yasuyuki Arai
发明人： Tatsuya Honda , Yasuyuki Arai
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L27/1225 , H01L27/3244 , H01L29/7869 , Y10T428/12917
摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

10. 发明授权

US08633488B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08633488B2
公开(公告)日：2014-01-21
申请号：US13325129
申请日：2011-12-14
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , G02F1/136
CPC分类号： H01L27/124 , G02F1/133553 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/136295 , G02F2201/123 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02686 , H01L21/3003 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/66537 , H01L29/78621 , H01L29/78633 , H01L29/78678 , H01L29/78684 , H01L29/78696
摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer.
摘要翻译：具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线连接到第二绝缘层上的栅电极，用于将源极配线和半导体层连接在一起的连接电极; 以及连接到半导体层的像素电极。

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