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    • 15. 发明授权
    • Method for producing In2O3—SnO2 precursor sol
    • 生产In2O3-SnO2前体溶胶的方法
    • US06235260B1
    • 2001-05-22
    • US09230252
    • 1999-03-22
    • Motoyuki TokiToshimi FukuiNaoko AsakumaTakamitsu Fujii
    • Motoyuki TokiToshimi FukuiNaoko AsakumaTakamitsu Fujii
    • B01F308
    • C01G19/00C03C17/253C03C2217/231C03C2218/113C04B41/505C04B2111/805C04B2111/94C04B41/0036C04B41/0045C04B41/4537C04B41/4554C04B41/5072
    • The invention relates to a method for forming a transparent conductive thin film of In2O3—SnO2 on a surface of a plastics substrate of less heat resistance other than that of glass, ceramics, etc. When an In2O3—SnO2 precursor sol is produced by hydrolyzing and polymerizing a solution containing indium alkoxide and tin alkoxide, either tri-s-butoxyindium or tri-t-butoxyindium is used as the indium alkoxide. Water is added to the solution containing indium alkoxide and tin alkoxide at a temperature of not higher than −20° C. The obtained In2O3—SnO2 precursor sol is applied to a surface of a substrate to form a gel film, then the gel film is either irradiated with an ultraviolet beam of which wave length is not longer than 360 nm, or irradiated with an ultraviolet beam of which wave length is not longer than 260 nm and further irradiated with a laser beam of which wave length is not longer than 360 nm, to crystallize the gel forming the thin film, whereby an In2O3—SnO2 thin film having a conductivity is formed on the surface of the substrate.
    • 本发明涉及在除了玻璃,陶瓷等以外的耐热性低的塑料基板的表面上形成In2O3-SnO2的透明导电性薄膜的方法。当In2O3-SnO2前体溶胶通过水解和 使用含有烷氧化铟和锡醇盐的溶液,即三正丁氧基铟或三叔丁氧基铟作为铟醇盐。 在不高于-20℃的温度下,向含有烷氧基烷氧化物和锡醇盐的溶液中加入水。将得到的In2O3-SnO2前体溶胶施加到基材的表面,形成凝胶膜,然后将凝胶膜 用波长不大于360nm的紫外线照射或用波长不大于260nm的紫外线照射,并进一步用波长不大于360nm的激光束照射 使形成薄膜的凝胶结晶,由此在基板的表面上形成具有导电性的In2O3-SnO2薄膜。
    • 18. 发明申请
    • METHOD AND SYSTEM FOR CELL AND TISSUE CULTIVATION
    • 细胞和组织培养的方法和系统
    • US20120003709A1
    • 2012-01-05
    • US13131152
    • 2010-07-01
    • Toshimi FukuiMotoyuki Toki
    • Toshimi FukuiMotoyuki Toki
    • C12N13/00C12M1/36
    • C12N13/00C12M23/04C12M23/20C12M33/00C12N11/00
    • A cell cultivating platform includes a substrate having a surface, at least one actuator moveable relative to the substrate, and a deformable material layer positioned above at least a portion of the supporting surface and the at least one actuator. The deformable material layer positioned opposite the substrate surface includes a biocompatible supportive surface suitable for supporting cultivated cells. The supportive surface deforms or otherwise deflects in response to activation of the at least one actuator, effectively releasing at least a portion of the cultured cells from the supportive surface. Suitable actuators include piezoelectric actuators that can be selectively energized according to one or more patterns to facilitate separation of cells from the supportive surface. Such activation cycles can be repeated.
    • 细胞培养平台包括具有表面的基底,可相对于基底移动的至少一个致动器和位于支撑表面和至少一个致动器的至少一部分上方的可变形材料层。 与基底表面相对定位的可变形材料层包括适于支撑培养细胞的生物相容支撑表面。 支撑表面响应于至少一个致动器的激活而变形或以其它方式偏转,有效地将至少一部分培养细胞从支撑表面释放出来。 合适的致动器包括压电致动器,其可以根据一个或多个图案选择性地通电以便于将细胞与支撑表面分离。 可以重复这样的激活循环。
    • 19. 发明授权
    • ZrO2-Al2O3 composite ceramic material and production method thereof
    • ZrO2-Al2O3复合陶瓷材料及其制备方法
    • US07012036B2
    • 2006-03-14
    • US10621385
    • 2003-07-18
    • Masahiro NawaKouichi YamaguchiMotoyuki Toki
    • Masahiro NawaKouichi YamaguchiMotoyuki Toki
    • C04B35/488
    • C04B35/4885
    • A ZrO2—Al2O3 composite ceramic material having high mechanical strength and toughness as well as excellent wear resistance and hardness is provided. This ceramic material includes a first phase of ZrO2 grains containing 10 to 12 mol % of CeO2 as a stabilizer and having an average grain size of 0.1 μm to 1 μm, and a second phase of Al2O3 grains having an average grain size of 0.1 to 0.5 μm. The ceramic material has a mutual nano-composite structure formed under a condition that a content of the second phase in the ceramic material is within a range of 20 to 60 vol % such that the Al2O3 grains are dispersed within said ZrO2 grains at a first dispersion ratio of 2% or more, and preferably 4% or more, which is defined as a ratio of the number of the Al2O3 grains dispersed within the ZrO2 grains relative to the number of the entire Al2O3 grains dispersed in the ceramic material, and the ZrO2 grains are dispersed within the Al2O3 grains at a second dispersion ratio of 1% or more, which is defined as a ratio of the number of the ZrO2 grains dispersed within the Al2O3 grains relative to the number of the entire ZrO2 grains dispersed in the ceramic material.
    • 提供具有高机械强度和韧性以及优异的耐磨性和硬度的ZrO 2 -Al 2 O 3 O 3复合陶瓷材料。 该陶瓷材料包括含有10〜12摩尔%的CeO 2 N 2作为稳定剂并且平均粒径为0.1〜1μm的ZrO 2 N 2晶粒的第一相, 和平均粒度为0.1〜0.5μm的Al 2 O 3 3晶粒的第二相。 陶瓷材料具有在陶瓷材料中的第二相的含量在20〜60体积%的范围内形成的相互纳米复合结构,使得Al 2 O 3%的颗粒以2%以上,优选为4%以上的第一分散比分散在所述ZrO 2 N 2晶粒内,其定义为 相对于整个Al 2 O 2的数量分散在ZrO 2 2晶粒内的Al 2 N 3 O 3晶粒, 分散在陶瓷材料中的3个/ 3个晶粒,并且ZrO 2/2晶粒分散在Al 2 O 3 3晶粒内 1%或更多的第二分散比,其定义为分散在Al 2 N 3 O 3中的ZrO 2 N 2晶粒的数量的比率, 相对于分散在陶瓷材料中的整个ZrO 2 N 2颗粒的数量。