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1. 发明授权

US06235260B1 Method for producing In2O3—SnO2 precursor sol 失效
标题翻译：生产In2O3-SnO2前体溶胶的方法
公开(公告)号：US06235260B1
公开(公告)日：2001-05-22
申请号：US09230252
申请日：1999-03-22
申请人： Motoyuki Toki , Toshimi Fukui , Naoko Asakuma , Takamitsu Fujii
发明人： Motoyuki Toki , Toshimi Fukui , Naoko Asakuma , Takamitsu Fujii
IPC分类号： B01F308
CPC分类号： C01G19/00 , C03C17/253 , C03C2217/231 , C03C2218/113 , C04B41/505 , C04B2111/805 , C04B2111/94 , C04B41/0036 , C04B41/0045 , C04B41/4537 , C04B41/4554 , C04B41/5072
摘要： The invention relates to a method for forming a transparent conductive thin film of In2O3—SnO2 on a surface of a plastics substrate of less heat resistance other than that of glass, ceramics, etc. When an In2O3—SnO2 precursor sol is produced by hydrolyzing and polymerizing a solution containing indium alkoxide and tin alkoxide, either tri-s-butoxyindium or tri-t-butoxyindium is used as the indium alkoxide. Water is added to the solution containing indium alkoxide and tin alkoxide at a temperature of not higher than −20° C. The obtained In2O3—SnO2 precursor sol is applied to a surface of a substrate to form a gel film, then the gel film is either irradiated with an ultraviolet beam of which wave length is not longer than 360 nm, or irradiated with an ultraviolet beam of which wave length is not longer than 260 nm and further irradiated with a laser beam of which wave length is not longer than 360 nm, to crystallize the gel forming the thin film, whereby an In2O3—SnO2 thin film having a conductivity is formed on the surface of the substrate.
摘要翻译：本发明涉及在除了玻璃，陶瓷等以外的耐热性低的塑料基板的表面上形成In2O3-SnO2的透明导电性薄膜的方法。当In2O3-SnO2前体溶胶通过水解和使用含有烷氧化铟和锡醇盐的溶液，即三正丁氧基铟或三叔丁氧基铟作为铟醇盐。在不高于-20℃的温度下，向含有烷氧基烷氧化物和锡醇盐的溶液中加入水。将得到的In2O3-SnO2前体溶胶施加到基材的表面，形成凝胶膜，然后将凝胶膜用波长不大于360nm的紫外线照射或用波长不大于260nm的紫外线照射，并进一步用波长不大于360nm的激光束照射使形成薄膜的凝胶结晶，由此在基板的表面上形成具有导电性的In2O3-SnO2薄膜。

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