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    • 12. 发明授权
    • Multi-functional device having scanner module and image scanning apparatus employing the scanner module
    • 具有扫描器模块和采用扫描仪模块的图像扫描装置的多功能装置
    • US08218205B2
    • 2012-07-10
    • US12118856
    • 2008-05-12
    • Kaname NagataniDong-hun Lee
    • Kaname NagataniDong-hun Lee
    • H04N1/04
    • H04N1/0286G02B17/08H04N1/02409H04N1/0249H04N1/02815H04N1/02835H04N1/1017H04N1/193H04N2201/0081H04N2201/02462H04N2201/02474H04N2201/02481
    • A multi-functional device comprising an image forming apparatus to form a printing image and a scanner module to scan an image in a first scanning direction. The scanner module includes an illuminator to illuminate a light to a document mount, a sensor unit to read an image information of an object placed on the document mount, and an imaging lens which is disposed between the document mount and the sensor unit and focuses the light reflected from the object onto the sensor unit. The illuminator includes a light source to emit light, a light guiding unit which is lengthened in a second scanning direction, faces the document mount and changes a traveling path of the light emitted from the light source to illuminate the document mount, and a guide holder which comprises an installation part where the light guiding unit is installed, and a mounting part where the light source holder is mounted to provide the light source at least one side of the light guiding unit.
    • 一种多功能设备,包括形成打印图像的图像形成装置和用于沿第一扫描方向扫描图像的扫描仪模块。 扫描器模块包括照明器,用于将光照射到原稿安装座;传感器单元,用于读取放置在原稿安装座上的物体的图像信息;以及成像镜头,其配置在原稿安装件和传感器单元之间, 从物体反射到传感器单元上​​的光。 照明器包括发光的光源,在第二扫描方向上延长的导光单元面对文件安装座,并改变从光源发射的光的行进路径以照亮文件安装座;以及导向架 其包括安装有导光单元的安装部分和安装部分,其中安装有光源保持器以在光导单元的至少一侧提供光源。
    • 15. 发明授权
    • Pixel sensor array including comparator and image sensor including the same
    • 像素传感器阵列包括比较器和图像传感器
    • US08379127B2
    • 2013-02-19
    • US12591039
    • 2009-11-05
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • H04N3/14H04N5/335H01L31/062H01L31/113
    • H04N5/3745H04N5/3741H04N5/378
    • Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.
    • 提供了一种像素传感器阵列和包括该像素传感器阵列的互补金属氧化物半导体(CMOS)图像传感器。 像素传感器阵列包括被配置为响应于入射光而产生电荷的光电转换元件。 信号发送电路被配置为基于第一控制信号将累积在光电变换元件中的电荷输出到第一节点,基于第二控制将第一节点的电位改变为第二信号线的电位 信号,并且基于第三控制信号将在第一节点中感测的信号输出到第一信号线。 开关元件被配置为基于第四控制信号将电源端子连接到第二信号线。 比较器,连接到第一信号线和第二信号线,并被配置为比较信号的电压和参考信号的电压。
    • 16. 发明申请
    • Pixel sensor array and image sensor including the same
    • 像素传感器阵列和图像传感器包括相同
    • US20100110256A1
    • 2010-05-06
    • US12591039
    • 2009-11-05
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • H04N5/335
    • H04N5/3745H04N5/3741H04N5/378
    • Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.
    • 提供了一种像素传感器阵列和包括该像素传感器阵列的互补金属氧化物半导体(CMOS)图像传感器。 像素传感器阵列包括被配置为响应于入射光而产生电荷的光电转换元件。 信号发送电路被配置为基于第一控制信号将累积在光电变换元件中的电荷输出到第一节点,基于第二控制将第一节点的电位改变为第二信号线的电位 信号,并且基于第三控制信号将在第一节点中感测的信号输出到第一信号线。 开关元件被配置为基于第四控制信号将电源端子连接到第二信号线。 比较器,连接到第一信号线和第二信号线,并被配置为比较信号的电压和参考信号的电压。
    • 18. 发明授权
    • MOS transistor and method for forming the same
    • US06670250B2
    • 2003-12-30
    • US10080077
    • 2002-02-21
    • Dong-hun Lee
    • Dong-hun Lee
    • H01L21336
    • H01L29/66477H01L21/26506H01L29/6656H01L29/78
    • A MOS transistor including a gate poly oxide layer formed to have different thicknesses over the entire surface of a semiconductor substrate and a method for forming the MOS transistor are provided. A gate oxide layer pattern and a gate conductive layer pattern are formed on a semiconductor substrate. A mask layer pattern is formed on the semiconductor substrate and the gate conductive layer pattern so that the gate conductive layer pattern is completely covered with the mask layer pattern. The semiconductor substrate is made to be amorphous using the mask layer pattern. The mask layer pattern is removed and then a gate poly oxide layer is deposited over the entire surface of the semiconductor substrate. A gate spacer layer is deposited on the gate poly oxide layer and gate spacers are formed by anisotropically etching the gate spacer layer and the gate poly oxide layer. A source/drain region is formed on the semiconductor substrate. Accordingly, it is possible to prevent damage to the semiconductor substrate, such as pitting of the semiconductor substrate, and reduce an increase in junction leakage current introduced by the occurrence of pitting. In addition, it is possible to thinly form a junction region and improve the performance of the MOS transistor.