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    • 1. 发明授权
    • Pixel sensor array including comparator and image sensor including the same
    • 像素传感器阵列包括比较器和图像传感器
    • US08379127B2
    • 2013-02-19
    • US12591039
    • 2009-11-05
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • H04N3/14H04N5/335H01L31/062H01L31/113
    • H04N5/3745H04N5/3741H04N5/378
    • Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.
    • 提供了一种像素传感器阵列和包括该像素传感器阵列的互补金属氧化物半导体(CMOS)图像传感器。 像素传感器阵列包括被配置为响应于入射光而产生电荷的光电转换元件。 信号发送电路被配置为基于第一控制信号将累积在光电变换元件中的电荷输出到第一节点,基于第二控制将第一节点的电位改变为第二信号线的电位 信号,并且基于第三控制信号将在第一节点中感测的信号输出到第一信号线。 开关元件被配置为基于第四控制信号将电源端子连接到第二信号线。 比较器,连接到第一信号线和第二信号线,并被配置为比较信号的电压和参考信号的电压。
    • 2. 发明申请
    • Pixel sensor array and image sensor including the same
    • 像素传感器阵列和图像传感器包括相同
    • US20100110256A1
    • 2010-05-06
    • US12591039
    • 2009-11-05
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • Wun-ki JungSeog-heon HamDong-hun LeeKwi-sung YooMin-ho Kwon
    • H04N5/335
    • H04N5/3745H04N5/3741H04N5/378
    • Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.
    • 提供了一种像素传感器阵列和包括该像素传感器阵列的互补金属氧化物半导体(CMOS)图像传感器。 像素传感器阵列包括被配置为响应于入射光而产生电荷的光电转换元件。 信号发送电路被配置为基于第一控制信号将累积在光电变换元件中的电荷输出到第一节点,基于第二控制将第一节点的电位改变为第二信号线的电位 信号,并且基于第三控制信号将在第一节点中感测的信号输出到第一信号线。 开关元件被配置为基于第四控制信号将电源端子连接到第二信号线。 比较器,连接到第一信号线和第二信号线,并被配置为比较信号的电压和参考信号的电压。