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11. 发明授权

US07105037B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
公开(公告)号：US07105037B2
公开(公告)日：2006-09-12
申请号：US10672051
申请日：2003-09-26
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： F24F3/16
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

12. 发明授权

US06857447B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US06857447B2
公开(公告)日：2005-02-22
申请号：US10166242
申请日：2002-06-10
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F17C7/00 , F17C5/00 , B08B9/027 , B08B5/00 , G05B11/01 , G06F15/00
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

13. 发明授权

US5914091A Point-of-use catalytic oxidation apparatus and method for treatment of voc-containing gas streams 失效
标题翻译：使用用催化氧化装置和处理含声气流的方法
公开(公告)号：US5914091A
公开(公告)日：1999-06-22
申请号：US602134
申请日：1996-02-15
申请人： Mark R. Holst , W. Karl Olander , Glenn M. Tom
发明人： Mark R. Holst , W. Karl Olander , Glenn M. Tom
IPC分类号： B01D53/72 , B01D53/86 , F01N3/10 , B01J8/00
CPC分类号： B01D53/8668 , B01D53/72
摘要： A point-of-use catalytic oxidation system, for treatment of a VOC-containing gas stream, including: a heat exchanger for heat exchange of a VOC-containing gas stream and a VOC-reduced gas stream at higher temperature than the VOC-containing gas stream, for heat recovery from the VOC-reduced gas stream for cooling thereof, to preheat the VOC-containing gas stream; a supplemental heater for supplemental heating of preheated VOC-containing gas, if and as required, to an elevated temperature for catalytic oxidation of VOC therein; and a bed of catalytic oxidizer material for catalytic oxidation of VOC in the VOC-containing gas stream, to yield the VOC-reduced gas stream. The heat exchanger, supplemental heater, and bed of catalytic oxidizer material are sized, constructed, arranged, and operated to effect autothermal catalytic oxidation of VOC in the bed of catalytic oxidizer material. The system may further employ a smoother to attenuate influent VOC spikes in the feed gas, and/or a concentrator to concentrate the feed gas VOC species for high efficiency VOC removal in the catalytic oxidation.
摘要翻译：一种用于处理含VOC的气流的使用点催化氧化系统，包括：用于在比含有VOC的气体的温度高的温度下热交换含VOC的气体流和VOC还原气流的热交换器气流，用于从VOC还原气流中回收热量用于冷却，以预热含VOC的气流; 一种补充加热器，用于在预先含有VOC的气体的温度下，根据需要对其中的VOC进行催化氧化的升高温度进行补充加热; 以及用于在含VOC的气流中催化氧化VOC的催化氧化剂床，以产生VOC还原气流。催化氧化剂材料的热交换器，补充加热器和床的尺寸，构造，布置和操作以在催化氧化剂床的床中进行VOC的自热催化氧化。该系统可以进一步采用更平滑的方式来减少进料气体中的流入VOC峰值，和/或浓缩器将浓缩进料气体VOC物质用于催化氧化中的高效挥发性有机化合物。

14. 发明授权

US07614421B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US07614421B2
公开(公告)日：2009-11-10
申请号：US11360732
申请日：2006-02-23
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F16K3/36 , B08B9/027 , G05B11/01
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

15. 发明授权

US07485169B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
标题翻译：利用排气再循环的半导体制造设备
公开(公告)号：US07485169B2
公开(公告)日：2009-02-03
申请号：US11519681
申请日：2006-09-12
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： F24F3/16 , H01L21/00
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
摘要翻译：一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域房间。该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境在设施中，例如，到设施的灰色房间。

16. 发明授权

US07328716B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US07328716B2
公开(公告)日：2008-02-12
申请号：US11062509
申请日：2005-02-22
申请人： W. Karl Olander , Matthew B Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F16K3/36 , B08B9/027 , G05B11/01
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

17. 发明授权

US6030591A Process for removing and recovering halocarbons from effluent process streams 失效
标题翻译：从废水处理流中除去和回收卤代烃的方法
公开(公告)号：US6030591A
公开(公告)日：2000-02-29
申请号：US2519
申请日：1998-01-02
申请人： Glenn M. Tom , H. Eric Fisher , W. Karl Olander
发明人： Glenn M. Tom , H. Eric Fisher , W. Karl Olander
IPC分类号： C07C17/38 , C01B7/00
CPC分类号： C07C17/38
摘要： A process for recovery of fluorocompound gas from an effluent gas stream containing the fluorocompound gas and other gas components, in which at least one of the other gas components is removed, e.g., by oxidation or contacting of the effluent stream with a dry material such as an adsorbent or scrubber medium, to yield a first effluent gas mixture containing the fluorocompound gas. The fluorocompound gas is removed from the first effluent gas mixture and recovered as a concentrated fluorocompound gas, by a process such as cryogenic processing, membrane separation, and/or adsorption.
摘要翻译：从含有氟化合物气体和其它气体组分的流出气流中回收氟化合物气体的方法，其中除去至少一种其它气体组分，例如通过将流出物流与干燥材料如吸附剂或洗涤器介质，以产生含有氟化合物气体的第一流出气体混合物。将氟化合物气体从第一废气混合物中除去，并通过诸如低温处理，膜分离和/或吸附的方法作为浓缩的氟化合物气体回收。

18. 发明授权

US07857880B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
标题翻译：利用排气再循环的半导体制造设备
公开(公告)号：US07857880B2
公开(公告)日：2010-12-28
申请号：US12364800
申请日：2009-02-03
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： B01D46/00
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
摘要翻译：一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域房间。该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境在设施中，例如，到设施的灰色房间。

19. 发明授权

US07798168B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US07798168B2
公开(公告)日：2010-09-21
申请号：US12615722
申请日：2009-11-10
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F16K3/36 , B08B9/027 , G05B11/01
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

20. 发明申请

US20100059694A1 PRESSURE-BASED GAS DELIVERY SYSTEM AND METHOD FOR REDUCING RISKS ASSOCIATED WITH STORAGE AND DELIVERY OF HIGH PRESSURE GASES 有权
标题翻译：基于压力的气体输送系统和减少与储存和输送高压气体有关的风险的方法
公开(公告)号：US20100059694A1
公开(公告)日：2010-03-11
申请号：US12615722
申请日：2009-11-10
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： G21K5/00 , F16K31/12
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

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