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11. 发明授权

US06935938B1 Multiple-conditioning member device for chemical mechanical planarization conditioning 有权
标题翻译：用于化学机械平面化调理的多调节构件装置
公开(公告)号：US06935938B1
公开(公告)日：2005-08-30
申请号：US10816444
申请日：2004-03-31
申请人： Yehiel Gotkis , Robert Charatan
发明人： Yehiel Gotkis , Robert Charatan
IPC分类号： B24B21/04 , B24B37/04 , B24B53/007 , B24B21/18
CPC分类号： B24B53/017 , B24B21/04
摘要： A multiple-conditioning member device for chemical mechanical planarization conditioning is described. The multiple conditioning members may be used in a chemical mechanical planarization apparatus which further includes a movably mounted polishing member, a wafer holder, and a slurry dispenser. The multiple conditioning members may be independently movable with respect to one another and configured to contact the polishing member. Specifically, a conditioning member may be independently movable with respect to another conditioning member based on x-axis control, y-axis control, z-axis control, alignment, speed of rotation, direction of rotation, amount of pressure of conditioning member on polishing member.
摘要翻译：描述了用于化学机械平面化调节的多重调节构件装置。多个调理构件可以用在化学机械平面化装置中，其还包括可移动安装的抛光构件，晶片保持器和浆料分配器。多个调节构件可以相对于彼此独立地移动并且构造成接触抛光构件。具体地说，调节构件可以基于x轴控制，y轴控制，z轴控制，对准，旋转速度，旋转方向，调节构件在抛光时的压力量独立地相对于另一个调节构件移动会员。

12. 发明申请

US20050066739A1 Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring 审中-公开
标题翻译：用于晶片机械应力监测和晶片热应力监测的方法和装置
公开(公告)号：US20050066739A1
公开(公告)日：2005-03-31
申请号：US10671978
申请日：2003-09-26
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
IPC分类号： B24B37/04 , B24B49/14 , B24B49/16 , G01L1/00
CPC分类号： B24B37/015 , B24B49/16
摘要： A chemical mechanical planarization (CMP) system is provided. The CMP system includes a wafer carrier configured to support a wafer during a planarization process, the wafer carrier including a sensor configured to detect a signal indicating a stress being experienced by the wafer during planarization. A computing device in communication with the sensor is included. The computing device is configured to translate the signal to generate a stress map for analysis. A stress relief device responsive to a signal received from the computing device is included. The stress relief device is configured to relieve the stress being experienced by the wafer.
摘要翻译：提供化学机械平面化（CMP）系统。 CMP系统包括被配置为在平坦化处理期间支撑晶片的晶片载体，晶片载体包括被配置成在平坦化期间检测指示由晶片经历的应力的信号的传感器。包括与传感器通信的计算设备。计算设备被配置为平移信号以产生用于分析的应力图。包括响应于从计算设备接收的信号的应力消除装置。应力释放装置被构造成减轻晶片经历的应力。

13. 发明授权

US06869337B2 System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques 失效
标题翻译：使用减小的表面积抛光垫和可变部分焊盘 - 晶片重叠技术来研磨和平坦化半导体晶片的系统和方法
公开(公告)号：US06869337B2
公开(公告)日：2005-03-22
申请号：US10770599
申请日：2004-02-03
申请人： John M. Boyd , Yehiel Gotkis , Rod Kistler
发明人： John M. Boyd , Yehiel Gotkis , Rod Kistler
IPC分类号： B24B37/04 , B24B37/26 , B24B49/04 , B24B51/00 , B24B53/007 , B24B53/017 , H01L21/304 , B24B1/00
CPC分类号： B24B53/017 , B24B37/042 , B24B37/26 , B24B49/04 , B24B51/00
摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
摘要翻译：用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

14. 发明申请

US20050007107A1 Complementary sensors metrological process and method and apparatus for implementing the same 失效
标题翻译：互补传感器计量过程及其实现方法和装置
公开(公告)号：US20050007107A1
公开(公告)日：2005-01-13
申请号：US10914017
申请日：2004-08-05
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
IPC分类号： H01L21/66 , G01B7/06
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译：提供了一种用于检测待处理晶片层的厚度的方法。该方法包括限定配置成在晶片附近产生一组互补传感器的多个传感器。该方法中还包括沿着晶片的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相异相同角度。该方法还包括测量由多个传感器产生的信号。还包括对由多个传感器产生的信号进行平均以产生组合信号。平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。

15. 发明授权

US06705930B2 System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques 有权
标题翻译：使用减小的表面积抛光垫和可变部分焊盘 - 晶片重叠技术来研磨和平坦化半导体晶片的系统和方法
公开(公告)号：US06705930B2
公开(公告)日：2004-03-16
申请号：US09754480
申请日：2001-01-04
申请人： John M. Boyd , Yehiel Gotkis , Rod Kistler
发明人： John M. Boyd , Yehiel Gotkis , Rod Kistler
IPC分类号： B24B2900
CPC分类号： B24B53/017 , B24B37/042 , B24B37/26 , B24B49/04 , B24B51/00
摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
摘要翻译：用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

16. 发明授权

US06503129B1 Activated slurry CMP system and methods for implementing the same 失效
公开(公告)号：US06503129B1
公开(公告)日：2003-01-07
申请号：US09684765
申请日：2000-10-06
申请人： Yehiel Gotkis
发明人： Yehiel Gotkis
IPC分类号： B24B5704
CPC分类号： B24B53/017 , B24B57/00 , H01L21/3212
摘要： A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.

17. 发明授权

US06454637B1 Edge instability suppressing device and system 失效
标题翻译：边缘不稳定抑制装置和系统
公开(公告)号：US06454637B1
公开(公告)日：2002-09-24
申请号：US09670469
申请日：2000-09-26
申请人： Yehiel Gotkis
发明人： Yehiel Gotkis
IPC分类号： B24B500
CPC分类号： B24B37/30 , B24B53/017 , B24B57/02
摘要： The present invention provides device and system for suppressing edge instability during a chemical mechanical planarization (CMP) process for planarizing a surface topography on a wafer. A wafer carrier holds and rotates a wafer on a polishing surface of a polishing pad that is arranged to move in a first direction. The edge instability suppressing device includes a front process unit and a second process unit. The front process unit is disposed around a first portion of the wafer facing the first direction and arranged to align to the polishing surface of the polishing pad independent of the wafer during CMP processing. The back process unit is disposed around a second portion of the wafer opposite the first portion and is arranged to align to the polishing surface of the polishing pad independent of the wafer during the CMP processing. In so doing, the aligned front and back process units substantially reduce edge effects on the wafer during the CMP processing.
摘要翻译：本发明提供了用于在用于平坦化晶片上的表面形貌的化学机械平面化（CMP）工艺中抑制边缘不稳定性的装置和系统。晶片载体保持并旋转抛光垫的抛光表面上的晶片，所述抛光表面布置成沿第一方向移动。边缘不稳定抑制装置包括前处理单元和第二处理单元。前处理单元围绕面向第一方向的晶片的第一部分设置，并且布置成在CMP处理期间与抛光垫的抛光表面对准，而不依赖于晶片。后处理单元设置在与第一部分相对的第二部分的晶片周围，并且被布置成在CMP处理期间与抛光垫的抛光表面对准，而与晶片无关。在这样做时，对准的前后处理单元在CMP处理期间基本上减少了对晶片的边缘效应。

18. 发明授权

US06386962B1 Wafer carrier with groove for decoupling retainer ring from water 失效
标题翻译：具有沟槽的晶圆载体，用于将保持环与水分离
公开(公告)号：US06386962B1
公开(公告)日：2002-05-14
申请号：US09608510
申请日：2000-06-30
申请人： Yehiel Gotkis , Aleksander A. Owczarz
发明人： Yehiel Gotkis , Aleksander A. Owczarz
IPC分类号： B24B4700
CPC分类号： B24B37/30 , B24B37/32
摘要： The present invention provides a wafer carrier for use with a chemical mechanical planarization apparatus. The wafer carrier includes a vacuum chuck and a retainer ring. The vacuum chuck is configured to hold and rotate a wafer for planarizing a surface topography of the wafer on a polishing pad. The vacuum chuck includes an inner region for holding the wafer and an outer region and further has a groove adapted to decouple the inner region and the outer region. The inner and outer regions of the vacuum chuck are arranged to move independently in a direction orthogonal to a polishing surface of the polishing pad. The retainer ring is disposed on the outer region of the vacuum chuck and is configured to retain the wafer during CMP processing. In this configuration, the decoupled retainer ring and the wafer are arranged to move independently to align to the polishing surface of the polishing pad during CMP processing.
摘要翻译：本发明提供一种与化学机械平面化装置一起使用的晶片载体。晶片载体包括真空卡盘和保持环。真空吸盘构造成保持和旋转晶片，以在抛光垫上平坦化晶片的表面形貌。真空吸盘包括用于保持晶片的内部区域和外部区域，并且还具有适于使内部区域和外部区域分离的凹槽。真空吸盘的内部和外部区域被布置成在与抛光垫的抛光表面正交的方向上独立地移动。保持环设置在真空卡盘的外部区域上，并且被构造成在CMP处理期间保持晶片。在这种构造中，解耦保持环和晶片被布置成在CMP处理期间独立地移动以与抛光垫的抛光表面对准。

19. 发明授权

US08890066B1 Sharp scattering angle trap for electron beam apparatus 有权
标题翻译：用于电子束装置的夏普散射角捕获器
公开(公告)号：US08890066B1
公开(公告)日：2014-11-18
申请号：US11265811
申请日：2005-11-03
申请人： Yehiel Gotkis , Garrett Pickard , Stanislaw Marek Borowicz , Tzu-Chin Chuang , Mehran Nasser-Ghodsi
发明人： Yehiel Gotkis , Garrett Pickard , Stanislaw Marek Borowicz , Tzu-Chin Chuang , Mehran Nasser-Ghodsi
IPC分类号： G21K5/04
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/028
摘要： One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.
摘要翻译：一个实施例涉及电子束装置。该装置包括用于产生入射电子束的源，用于聚焦入射电子束的电子透镜，使得光束撞击在衬底表面上并与表面材料相互作用以引起散射电子的二次发射;以及检测器，被配置为检测散射的电子。该装置还包括有利的装置，其被配置为捕获相对于衬底表面的样品表面平面以锐角发射的散射电子。还公开了其他实施例。

20. 发明授权

US08128278B2 Methods and apparatus for thin metal film thickness measurement 有权
标题翻译：薄金属薄膜厚度测量方法和设备
公开(公告)号：US08128278B2
公开(公告)日：2012-03-06
申请号：US12508838
申请日：2009-07-24
申请人： Yehiel Gotkis , Mikhail Korolik
发明人： Yehiel Gotkis , Mikhail Korolik
IPC分类号： G01N25/00 , G01N17/00 , G01K3/00
CPC分类号： G01B21/085
摘要： A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
摘要翻译：提供了一种用于测量金属膜厚度的方法。该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。然后，测量金属膜的温度。接下来，基于温度和限定的热能量计算金属膜的厚度。还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。

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