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    • 14. 发明授权
    • Semiconductor element and manufacturing method thereof
    • 半导体元件及其制造方法
    • US07998766B2
    • 2011-08-16
    • US12108553
    • 2008-04-24
    • Yasushi SakumaDaisuke NakaiShigenori HayakawaKazuhiro Komatsu
    • Yasushi SakumaDaisuke NakaiShigenori HayakawaKazuhiro Komatsu
    • H01L21/00
    • H01S5/0265H01S5/0425
    • A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
    • 提供半导体元件和半导体元件的制造方法。 脊形波导型半导体集成元件包括:EA部分的电极和LD部分的电极,被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离,并且其中每个电极形成在上表面的至少一部分的上表面和边缘上 表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。
    • 19. 发明授权
    • Semiconductor light receiving device and method of manufacturing the same
    • 半导体光接收装置及其制造方法
    • US09029970B2
    • 2015-05-12
    • US13069422
    • 2011-03-23
    • Ryu WashinoYasushi SakumaHiroshi Hamada
    • Ryu WashinoYasushi SakumaHiroshi Hamada
    • H01L31/0232H01L31/0216H01L31/107
    • H01L31/02161H01L31/035281H01L31/107Y02E10/50
    • Provided is a semiconductor light receiving device including: a semiconductor substrate; a semiconductor layer laminated on the semiconductor substrate and including an upper surface portion; a reflecting film formed to cover the upper surface portion of the semiconductor layer and including a principal reflecting region and an upper surface; and an upper electrode formed to cover at least one portion of the upper surface of the reflecting film, and including a junction portion extending through the reflecting file to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to a region of the reflecting film located outside the junction portion, in which the semiconductor light receiving device detects light entering from another side of the semiconductor substrate.
    • 提供一种半导体光接收装置,包括:半导体基板; 层叠在所述半导体基板上并且包括上表面部分的半导体层; 形成为覆盖半导体层的上表面部分并且包括主反射区域和上表面的反射膜; 以及形成为覆盖反射膜的上表面的至少一部分的上电极,并且包括延伸穿过反射文件夹的接合部分以与半导体层的上表面部分接触,接合部分 上部电极围绕反射膜的主反射区域的圆周的一部分,主反射区域连接到位于结合部外侧的反射膜的区域,半导体光接收装置检测从另一侧进入的光 的半导体衬底。