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11. 发明授权

US06773765B1 Thermally sprayed, flexible magnet with an induced anisotropy 失效
标题翻译：热喷涂，具有诱导各向异性的柔性磁体
公开(公告)号：US06773765B1
公开(公告)日：2004-08-10
申请号：US09433858
申请日：1999-11-04
申请人： Richard J. Gambino , Dongil Shin , Jeffrey A. Brogan
发明人： Richard J. Gambino , Dongil Shin , Jeffrey A. Brogan
IPC分类号： B29C3508
CPC分类号： H01F41/16 , H01F1/0027 , Y10T428/254
摘要： Disclosed is a process for making a flexible magnet with an induced anisotropy, and in particular to a process for making a flexible anisotropic magnet by thermal spraying in the presence of an applied magnetic field. The method may be used to fabricate a substrate having a flexible anisotropic magnetic coating or a free standing anisotropic flexible magnet.
摘要翻译：公开了一种制造具有诱导各向异性的柔性磁体的方法，特别涉及一种在施加的磁场的存在下通过热喷涂制造柔性各向异性磁体的方法。该方法可用于制造具有柔性各向异性磁性涂层或独立的各向异性柔性磁体的衬底。

12. 发明授权

US5440507A Diamond-like carbon write-read optical storage memory 失效
标题翻译：类金刚石碳读写光存储器
公开(公告)号：US5440507A
公开(公告)日：1995-08-08
申请号：US350249
申请日：1994-12-06
申请人： Michael J. Brady , Bodil E. Braren , Richard J. Gambino , Alfred Grill , Vishnubhai V. Patel
发明人： Michael J. Brady , Bodil E. Braren , Richard J. Gambino , Alfred Grill , Vishnubhai V. Patel
IPC分类号： B41M5/26 , G11B7/00 , G11B7/0045 , G11B7/0055 , G11B7/24 , G11B7/243 , G11B7/258 , G11B7/30 , G11C11/42 , G11C13/04
CPC分类号： G11B7/258 , G11B7/00454 , G11B7/00557 , G11B7/24 , G11B7/243 , G11B2007/2431 , G11B2007/24312 , G11B2007/24322 , G11B2007/24328 , Y10S430/146 , Y10S430/165
摘要： A method and apparatus for storing data is provided incorporating an amorphous solid having covalent bonds and a first index of refraction and an energy source for thermally heating selected areas of the amorphous solid to change the index of refraction without melting or substantially crystallizing the amorphous solid. The invention overcomes the problem of corrosion, moisture, or microbial attack resulting in deterioration of the storage medium over time, i.e., 100 years.
摘要翻译：提供一种用于存储数据的方法和装置，其包含具有共价键和第一折射率的无定形固体和用于热加热非晶形固体的选定区域的能量源，以改变折射率而不熔化或基本上使无定形固体结晶。本发明克服了腐蚀，潮湿或微生物侵袭的问题，导致存储介质随着时间，即100年的劣化。

13. 发明授权

US5331589A Magnetic STM with a non-magnetic tip 失效
标题翻译：磁性STM带有非磁性尖端
公开(公告)号：US5331589A
公开(公告)日：1994-07-19
申请号：US968772
申请日：1992-10-30
申请人： Richard J. Gambino , Ralph Ruf , Elia Zeldov
发明人： Richard J. Gambino , Ralph Ruf , Elia Zeldov
IPC分类号： G01N27/72 , G01N37/00 , G01Q60/02 , G01Q60/14 , G01Q60/16 , G01Q60/54 , G01Q80/00 , G01R33/038 , G01R33/10 , G01R33/12 , G11B5/00 , G11B5/02 , G11B9/00 , G11C13/00 , G11C11/00 , G11C11/18
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/02 , G01Q60/14 , G01Q60/54 , G01R33/0385 , G11B5/00 , B82Y10/00 , B82Y25/00 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , G11B9/1418 , Y10S977/861 , Y10S977/865
摘要： An apparatus and method for imaging the magnetic structure and the magnetic domains of a sample is described incorporating a scanning tunneling microscope (STM), a voltage generator for varying the voltage on the tip, an ammeter for measuring the current through the tip, circuitry to determine the tip voltage at zero current and a current source for passing current longitudinally through the sample. The invention may further include an applied magnetic field in the plane of the sample and orthogonal to current passing through the sample. A high density non-volatile memory is described incorporating the above apparatus except for the applied magnetic field and further incorporating a layer of ferromagnetic material having magnetic domains therein indicative of information.
摘要翻译：描述了用于对样品的磁性结构和磁畴进行成像的装置和方法，其包括扫描隧道显微镜（STM），用于改变尖端的电压的电压发生器，用于测量通过尖端的电流的电流表，电路确定零电流时的尖端电压和用于使电流纵向通过样品的电流源。本发明还可以包括在样品的平面中施加的磁场并且与通过样品的电流正交。描述了一种高密度非易失性存储器，其结合了除了所施加的磁场之外的上述装置，并且还包括其中具有指示信息的磁畴的铁磁材料层。

14. 发明授权

US07936030B2 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween 有权
标题翻译：包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法
公开(公告)号：US07936030B2
公开(公告)日：2011-05-03
申请号：US12923013
申请日：2010-08-30
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： H01L23/02
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

15. 发明授权

US07753584B2 Thermocouples 有权
标题翻译：热电偶
公开(公告)号：US07753584B2
公开(公告)日：2010-07-13
申请号：US11695451
申请日：2007-04-02
申请人： Richard J. Gambino , Jon Patrick Longtin , Jeffrey A. Brogan , Jonathan S. Gutleber , Robert J. Greenlaw
发明人： Richard J. Gambino , Jon Patrick Longtin , Jeffrey A. Brogan , Jonathan S. Gutleber , Robert J. Greenlaw
IPC分类号： G01K7/02 , H01L35/28
CPC分类号： H01L35/20 , G01K7/04 , H01L35/08
摘要： A thermocouple disposed on a substrate comprises a first leg of thermoelectric material, a second leg of thermoelectric material, and a thermocouple junction electrically connecting the first leg and the second leg, wherein a height of the thermocouple junction is substantially a height of the first or second legs.
摘要翻译：设置在基板上的热电偶包括热电材料的第一支腿，热电材料的第二支腿和电连接第一支腿和第二支柱的热电偶结，其中热电偶结的高度基本上是第一或第二条腿

16. 发明授权

US07272033B2 Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device 有权
标题翻译：使用自旋电荷的磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作该半导体器件的方法
公开(公告)号：US07272033B2
公开(公告)日：2007-09-18
申请号：US11193625
申请日：2005-08-01
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

17. 发明授权

US06781871B2 Magnetic random access memory and method of operating the same 有权
标题翻译：磁性随机存取存储器及其操作方法
公开(公告)号：US06781871B2
公开(公告)日：2004-08-24
申请号：US10316844
申请日：2002-12-12
申请人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
发明人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
IPC分类号： G11C1100
CPC分类号： G11C19/0808 , G11C11/15 , G11C11/16
摘要： A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
摘要翻译：一种使用磁畴阻力和巨磁阻（GMR）或隧道磁阻（TMR）的磁性随机存取存储器及其操作方法，其中磁性随机存取存储器包括数据存储单元，其包括固定层，非磁性层和具有两端的自由层; 电连接到自由层的两端的数据输入装置，用于向自由层施加电流以将数据输入数据存储单元; 以及电连接到所述自由层和所述固定层的数据输出装置，以输出存储在所述数据存储单元中的数据。因此，根据本发明的磁性随机存取存储器具有比使用切换字段来记录数据的磁性随机存取存储器更好的性能。

18. 发明授权

US5281447A Patterned deposition of metals via photochemical decomposition of metal-oxalate complexes 失效
标题翻译：通过金属 - 草酸盐络合物的光化学分解形成金属沉积
公开(公告)号：US5281447A
公开(公告)日：1994-01-25
申请号：US783054
申请日：1991-10-25
申请人： Michael J. Brady , Stephen L. Buchwalter , Richard J. Gambino , Martin J. Goldberg , Kam L. Lee , Alfred Viehbeck
发明人： Michael J. Brady , Stephen L. Buchwalter , Richard J. Gambino , Martin J. Goldberg , Kam L. Lee , Alfred Viehbeck
IPC分类号： C23C18/14 , G03C5/58 , G03F7/004 , G03F7/26 , H05K3/10 , B05D3/06 , B05D5/12
CPC分类号： C23C18/14 , C23C18/1608 , C23C18/1612 , C23C18/204 , C23C18/208 , C23C18/30 , G03C5/58 , G03F7/0047 , G03F7/265 , H05K3/105 , H05K2203/056 , H05K2203/121
摘要： The invention is directed to a method for forming a metal coating on a substrate by applying an oxalate of a Group VIII element from the Periodic Table of the Elements to the substrate. The oxalate is selected so that it will decompose to a complex of a zero valent Group VIII element or a Group VIII element on exposure to an energy source. Microelectronic circuits, etch masks or metal contacts on superconductors can be formed by the method when the oxalate coating is exposed to an energy source through a mask or the energy source beamed at the oxalate to trace a pattern on it.The metal thus obtained can be subsequently coated by electroless compositions especially where the Group VIII element is a catalyst for electroless coatings such as palladium. Additionally, the metal coating may be coated by an electrolytic composition.Through hole plating can also be achieved by applying the oxalates of a Group VIII element in the through hole of a circuit board followed by exposure to an energy source optionally followed by the application of an electroless and/or electrolytic metal composition.
摘要翻译：本发明涉及一种通过将元素周期表中第VIII族元素的草酸盐施用到基材上而在基材上形成金属涂层的方法。选择草酸盐，使其在暴露于能量源时将分解成零价VIII族元素或VIII族元素的络合物。当通过掩模将草酸盐涂层暴露于能量源或者在草酸盐上辐射的能量源来追踪其上的图案时，可以通过该方法形成微电子电路，超导体上的金属接触或金属接触。由此获得的金属可以随后通过无电组合物涂覆，特别是其中VIII族元素是无电镀涂层如钯的催化剂。此外，金属涂层可以由电解组合物涂覆。也可以通过将VIII族元素的草酸盐施加到电路板的通孔中，然后暴露于能量源，随后施加无电解和/或电解金属组合物来实现通孔电镀。

19. 发明授权

US5026682A Devices using high T.sub.c superconductors 失效
标题翻译：使用高Tc超导体的器件
公开(公告)号：US5026682A
公开(公告)日：1991-06-25
申请号：US37912
申请日：1987-04-13
申请人： Gregory J. Clark , Richard J. Gambino , Roger H. Koch , Robert B. Laibowitz , Allan D. Marwick , Corwin P. Umbach
发明人： Gregory J. Clark , Richard J. Gambino , Roger H. Koch , Robert B. Laibowitz , Allan D. Marwick , Corwin P. Umbach
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24
CPC分类号： H01L39/2464 , H01L39/225 , H01L39/249 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/725
摘要： A superconducting device operable at temperatures in excess of 30.degree. K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high T.sub.c superconducting material, the SQUID device being operable at temperatures in excess of 60.degree. K. High energy beams, for example ion beams, are used to convert selected portions of the high T.sub.c superconductor to nonsuperconductor properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.

20. 发明授权

US06579728B2 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound 失效
标题翻译：制造高分辨率，低档信用卡读卡器和读卡器，用于通过声音传输数据
公开(公告)号：US06579728B2
公开(公告)日：2003-06-17
申请号：US09902623
申请日：2001-07-12
申请人： Alan H. Grant , Richard J. Gambino
发明人： Alan H. Grant , Richard J. Gambino
IPC分类号： H01L2100
CPC分类号： G11B5/3903 , G06K7/084 , G06K7/087 , G06K17/0022 , G11B5/00804 , G11B5/3163 , H01L43/12
摘要： A portable card reader designed to be carried in a wallet or purse has an electromagnetic head that reads information from a magnetic strip of a card or information is read from the card by an array of Hall sensors. In a further embodiment, the card reader uses a magnetic sensor based on magnetoresistive sensing of magnetic transitions of a magnetic stripe, suitable for use with small, portable electronic devices. In each embodiment, the information read from the card may be converted to a sequence of electronic bursts of predetermined frequency, preferably in the audible or ultrasound range. The sound signals are output by a speaker to the microphone of a telephone. The signal is then transmitted over the telephone lines to a remote receiver. The receiver then converts the sound bursts into signal pulses, which can be read using the computer software of a conventional card reader.
摘要翻译：设计为携带在钱包或钱包中的便携式读卡器具有从卡的磁条读取信息的电磁头，或者通过霍尔传感器阵列从卡读取信息。在另一个实施例中，读卡器使用基于磁阻检测磁条的磁传感器，该磁传感器适用于小型便携式电子设备。在每个实施例中，从卡读取的信息可以被转换成预定频率的电子脉冲序列，优选在可听或超声范围内。声音信号由扬声器输出到电话的麦克风。然后，信号通过电话线传输到远程接收器。然后，接收器将声音脉冲串转换为信号脉冲，其可以使用常规读卡器的计算机软件读取。

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