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11. 发明授权

US08349702B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08349702B2
公开(公告)日：2013-01-08
申请号：US12426305
申请日：2009-04-20
申请人： Sho Kato , Satoshi Toriumi , Fumito Isaka
发明人： Sho Kato , Satoshi Toriumi , Fumito Isaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02532 , H01L21/0262 , H01L21/02667 , H01L21/02686 , H01L21/76254
摘要： A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
摘要翻译：通过适合于批量生产的方法提供半导体衬底。此外，提供了具有优异特性的具有有效利用资源的半导体衬底。单晶半导体衬底被照射以在单晶半导体衬底中形成受损区域; 在单晶半导体衬底上形成绝缘层; 绝缘层和支撑基板彼此接合; 通过在损伤区域部分分离单晶半导体衬底，在支撑衬底上形成第一单晶半导体层; 在所述第一单晶半导体层上形成第一半导体层; 在与第一半导体层的形成不同的条件下，在第一半导体层上形成第二半导体层; 通过提高第一和第二半导体层的结晶度来形成第二单晶半导体层。

12. 发明授权

US08043935B2 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device 有权
标题翻译：半导体基板的制造方法及半导体装置的制造方法
公开(公告)号：US08043935B2
公开(公告)日：2011-10-25
申请号：US12621541
申请日：2009-11-19
申请人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

13. 发明授权

US07939426B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07939426B2
公开(公告)日：2011-05-10
申请号：US12844856
申请日：2010-07-28
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

14. 发明授权

US07842584B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07842584B2
公开(公告)日：2010-11-30
申请号：US12339413
申请日：2008-12-19
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

15. 发明授权

US08420504B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08420504B2
公开(公告)日：2013-04-16
申请号：US12942156
申请日：2010-11-09
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

16. 发明授权

US08313975B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08313975B2
公开(公告)日：2012-11-20
申请号：US13222423
申请日：2011-08-31
申请人： Fumito Isaka , Sho Kato , Junpei Momo
发明人： Fumito Isaka , Sho Kato , Junpei Momo
IPC分类号： H01L21/30 , H01L21/301
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

17. 发明授权

US08173496B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08173496B2
公开(公告)日：2012-05-08
申请号：US13024360
申请日：2011-02-10
申请人： Sho Kato , Satoshi Toriumi , Fumito Isaka , Hideto Ohnuma
发明人： Sho Kato , Satoshi Toriumi , Fumito Isaka , Hideto Ohnuma
IPC分类号： H01L21/00 , H01L21/336 , H01L21/30
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

18. 发明授权

US07951656B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07951656B2
公开(公告)日：2011-05-31
申请号：US12467454
申请日：2009-05-18
申请人： Sho Kato , Satoshi Toriumi , Fumito Isaka , Hideto Ohnuma
发明人： Sho Kato , Satoshi Toriumi , Fumito Isaka , Hideto Ohnuma
IPC分类号： H01L21/00 , H01L21/336 , H01L21/30
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

19. 发明授权

US07781308B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07781308B2
公开(公告)日：2010-08-24
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

20. 发明申请

US20090142904A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090142904A1
公开(公告)日：2009-06-04
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

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