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11. 发明授权

US6159792A Method for forming a capacitor of semiconductor device 有权
标题翻译：用于形成半导体器件的电容器的方法
公开(公告)号：US6159792A
公开(公告)日：2000-12-12
申请号：US224042
申请日：1998-12-30
申请人： Sang Wook Kim , Dong Myung Lee , Ik Soo Choi
发明人： Sang Wook Kim , Dong Myung Lee , Ik Soo Choi
IPC分类号： H01L27/06 , H01L21/02 , H01L21/311 , H01L21/8242
CPC分类号： H01L28/84 , H01L21/31116 , H01L27/10852 , H01L28/91
摘要： An improved method for forming a capacitor which is capable of increasing cell capacitance is disclosed. The capacitor easily formed a sequential two-step etching processes. The two-step etching include a selectively etching to form the contact hole for exposing an etch stop layer between gate electrodes, and an isotopically dry etching to maximize capacitor surface area without cleaning process after the selectively etching, an interlayer insulating layer being patterned in a manner which produces inner interlayer contact sidewalls having standing wave ripples and removes the exposed etch stop layer. As a result, it is found that the capacitor which is obtained by a simple and easy two-step dry etching exhibits an increased capacitor surface area. Furthermore, it is possible to form the stacked capacitor having sufficiently high storage capacitance without increasing the contact resistance.
摘要翻译：公开了一种用于形成能够增加单元电容的电容器的改进方法。电容器容易形成顺序的两步蚀刻工艺。两级蚀刻包括选择性蚀刻以形成用于在栅电极之间暴露蚀刻停止层的接触孔和在选择性蚀刻之后不进行清洁处理的电容器表面积最大化的同位素干蚀刻，层间绝缘层被图案化产生具有驻波波纹的内层间接触侧壁并去除暴露的蚀刻停止层的方式。结果发现，通过简单且容易的两步干蚀刻获得的电容器表现出增加的电容器表面积。此外，可以形成具有足够高的存储电容的层叠电容器，而不增加接触电阻。

12. 发明授权

US10392559B2 Preparation method of nanocrystals coated with metal-surfactant layers 有权
公开(公告)号：US10392559B2
公开(公告)日：2019-08-27
申请号：US12611555
申请日：2009-11-03
申请人： Eun Joo Jang , Sang Wook Kim
发明人： Eun Joo Jang , Sang Wook Kim
IPC分类号： B82Y20/00 , C09K11/70 , B82Y30/00 , H05B33/14 , H01L51/50
摘要： A method for preparing nanocrystals is disclosed. The method includes synthesizing colloidal semiconductor nanocrystal cores, and adding a metal salt to the colloidal semiconductor nanocrystal cores and heating the mixture while maintaining the reaction temperature constant. During the reaction, the surfaces of the semiconductor nanocrystal cores are etched (‘in-situ etching’) and metal-surfactant layers are formed on the etched surface portions of the semiconductor nanocrystal cores. The metal-surfactant layers are derived from the metal salt. Nanocrystals prepared by the method have minimal surface defects and exhibit high luminescence efficiency and good stability.

13. 发明授权

US10157989B2 Graphene electronic device and manufacturing method thereof 有权
公开(公告)号：US10157989B2
公开(公告)日：2018-12-18
申请号：US13478548
申请日：2012-05-23
申请人： Chang Seung Lee , Sang Wook Kim , Seong Jun Park , David Seo , Young Jun Yun , Yung Hee Lee
发明人： Chang Seung Lee , Sang Wook Kim , Seong Jun Park , David Seo , Young Jun Yun , Yung Hee Lee
IPC分类号： H01L29/00 , H01L21/00 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/861 , H01L29/16 , H01L29/786
摘要： A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

14. 发明授权

US08988464B2 System and method for multi-layered augmented reality 有权
标题翻译：多层次增强现实的系统和方法
公开(公告)号：US08988464B2
公开(公告)日：2015-03-24
申请号：US13226946
申请日：2011-09-07
申请人： Kyung Hwan Kim , Yong Beom Lee , Sang Wook Kim , Seon Min Rhee
发明人： Kyung Hwan Kim , Yong Beom Lee , Sang Wook Kim , Seon Min Rhee
IPC分类号： G09G5/00 , G06T19/00 , G06T7/00 , G06T7/20
CPC分类号： G06T19/006 , G06T7/12 , G06T7/194 , G06T7/248
摘要： A multi-layered augmented reality system and method may extract a target object and a background from an image frame, may track the target object and the background, may apply different coordinate systems to a first virtual object corresponding to the target object and a second virtual object corresponding to the background, and may independently control the first virtual object and the second virtual object.
摘要翻译：多层增强现实系统和方法可以从图像帧提取目标对象和背景，可以跟踪目标对象和背景，可以将不同的坐标系应用于与目标对象相对应的第一虚拟对象，第二虚拟对象对应于背景，并且可以独立地控制第一虚拟对象和第二虚拟对象。

15. 发明申请

US20130171781A1 GRAPHENE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：石墨电子器件及其制造方法
公开(公告)号：US20130171781A1
公开(公告)日：2013-07-04
申请号：US13478548
申请日：2012-05-23
申请人： Chang Seung Lee , Sang Wook Kim , Seong Jun Park , David Seo , Young Jun Yun , Yung Hee Lee
发明人： Chang Seung Lee , Sang Wook Kim , Seong Jun Park , David Seo , Young Jun Yun , Yung Hee Lee
IPC分类号： H01L21/336 , H01L21/329
CPC分类号： H01L29/4232 , H01L29/1606 , H01L29/66431 , H01L29/7781 , H01L29/78603 , H01L29/78684 , H01L29/861
摘要： A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.
摘要翻译：石墨烯电子器件的制造方法可以包括在基板上形成金属化合物层和催化剂层，催化剂层在金属化合物层中包含金属元素，在催化剂层上生长石墨烯层，并将催化剂层进入金属化合物层的一部分。

16. 发明申请

US20130029490A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 失效
公开(公告)号：US20130029490A1
公开(公告)日：2013-01-31
申请号：US13190378
申请日：2011-07-25
申请人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/312
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

17. 发明申请

US20120236119A1 APPARATUS AND METHOD FOR ESTIMATING CAMERA MOTION USING DEPTH INFORMATION, AND AUGMENTED REALITY SYSTEM 有权
标题翻译：使用深度信息估计摄像机运动的设备和方法，以及已实现的现实系统
公开(公告)号：US20120236119A1
公开(公告)日：2012-09-20
申请号：US13353767
申请日：2012-01-19
申请人： Seon Min RHEE , Yong Beom Lee , Sang Wook Kim , Kyung Hwan Kim , Do Kyoon Kim
发明人： Seon Min RHEE , Yong Beom Lee , Sang Wook Kim , Kyung Hwan Kim , Do Kyoon Kim
IPC分类号： H04N13/02 , G06K9/46
CPC分类号： G01S11/12 , G01S3/7864 , G06T7/246 , G06T2207/10028 , G06T2207/30244
摘要： Provided is a camera motion estimation method and apparatus that may estimate a motion of a depth camera in real time. The camera motion estimation apparatus may extract an intersection point from plane information of a depth image, calculate a feature point associated with each of planes included in the plane information using the extracted intersection point, and extract a motion of a depth camera providing the depth image using the feature point. Accordingly, in an environment where an illumination environment dynamically varies, or regardless of a texture state within a space, the camera motion estimation apparatus may estimate a camera motion.
摘要翻译：提供了可以实时估计深度相机的运动的相机运动估计方法和装置。相机运动估计装置可以从深度图像的平面信息中提取交点，使用所提取的交点来计算与包括在平面信息中的每个平面相关联的特征点，并提取提供深度图像的深度相机的运动使用特征点。因此，在照明环境动态变化的环境中，或者与空间内的纹理状态无关的情况下，摄像机运动估计装置可以估计摄像机运动。

18. 发明授权

US08073095B2 Liquid target having internal support for radioisotope production at cyclotron 有权
标题翻译：液体靶在回旋加速器中具有放射性同位素生产的内部支持
公开(公告)号：US08073095B2
公开(公告)日：2011-12-06
申请号：US12171388
申请日：2008-07-11
申请人： Min Goo Hur , Seung Dae Yang , Sang Wook Kim
发明人： Min Goo Hur , Seung Dae Yang , Sang Wook Kim
IPC分类号： G21G1/10 , G21G1/00 , B23P19/00
CPC分类号： H05H6/00 , G21G1/10 , Y10T29/531
摘要： An F-18 production target system having an internal support produces F-18 by means of a nuclear reaction of protons and H218O, and reduces the deformation of thin sheets to thus increase the durability of the thin sheets. The F-18 production target system includes a frame, which has the shape of a cylinder the central portion of which is bored, holds H218O in the central portion, and includes through-holes bored from the central portion to the outer circumference thereof, thin sheets, which are installed on opposite sides of the frame so as to seal the central portion, and a support, which is installed in the central portion so as to prevent the thin sheets from being deformed.
摘要翻译：具有内部支撑的F-18生产目标系统通过质子和H218O的核反应产生F-18，并减少薄片的变形，从而提高薄片的耐久性。 F-18生产对象系统包括一个框架，该框架具有中心部分钻孔的圆筒形状，将H218O保持在中心部分，并且包括从中心部分到外圆周钻孔的通孔，薄安装在框架的相对侧以便密封中心部分的片材以及安装在中心部分中以防止薄片变形的支撑件。

19. 发明申请

US20090260971A1 METHOD OF PREPARING FLUOROALKYL COMPOUNDS USING RADIATION 审中-公开
标题翻译：使用辐射制备氟代醇化合物的方法
公开(公告)号：US20090260971A1
公开(公告)日：2009-10-22
申请号：US12244536
申请日：2008-10-02
申请人： Sang Wook Kim , Min Goo Hur , Seung Dae Yang , Kook Hyun Yu
发明人： Sang Wook Kim , Min Goo Hur , Seung Dae Yang , Kook Hyun Yu
IPC分类号： B01J19/12
CPC分类号： C07C303/30 , C07B59/001 , C07B2200/05 , C07C29/62 , C07C309/73 , C07C31/38
摘要： Disclosed herein is a method of preparing a fluoroalkyl compound using radiation, including: mixing an alkyl compound having a leaving group with tetrabutylammonium fluoride (TBAF) in the presence of a reaction solvent at room temperature to form a mixed solution (step 1); and applying radiation to the mixed solution while stirring it to prepare a fluoroalkyl compound (step 2). The method of preparing a fluoroalkyl compound using radiation is advantageous in that fluoroalkyl compounds can be easily prepared in a short reaction time at room temperature, in that the method is safe because it is not required to use fluorine gas, which is harmful to the human body, in that the method can be usefully used to prepare fluoroalkyl compounds because the yield of fluoroalkyl compounds obtained using the method is higher than when using conventional SN2 reaction methods, and in that fluorine 18F, which is a radioactive isotope, can be easily introduced into alkyl compounds.
摘要翻译：本文公开了使用辐射制备氟烷基化合物的方法，其包括：在室温下，在反应溶剂存在下，将具有离去基团的烷基化合物与四丁基氟化铵（TBAF）混合以形成混合溶液（步骤1）。并在搅拌下对混合溶液施加辐射以制备氟烷基化合物（步骤2）。使用辐射制备氟代烷基化合物的方法的优点在于，氟烷基化合物可以在室温下在短的反应时间内容易地制备，因为该方法是安全的，因为不需要使用对人体有害的氟气因为该方法可用于制备氟烷基化合物，因为使用该方法获得的氟烷基化合物的产率高于使用常规SN2反应方法时的产率，并且可以容易地引入作为放射性同位素的氟18F 转化成烷基化合物。

20. 发明授权

US08387654B2 Automatic pressure reducing valve 失效
标题翻译：自动减压阀
公开(公告)号：US08387654B2
公开(公告)日：2013-03-05
申请号：US12742777
申请日：2009-02-27
申请人： Sang Wook Kim
发明人： Sang Wook Kim
IPC分类号： F16K31/122
CPC分类号： G05D16/103 , Y10T137/2663 , Y10T137/7722 , Y10T137/7781 , Y10T137/8242 , Y10T137/8733 , Y10T137/87555
摘要： Disclosed is an automatic pressure reducing valve. A body includes a hollow portion, an inlet portion and an outlet portion for flow of a fluid and has an internal space. A cylinder is installed inside the hollow portion and has at least two holes formed in its wall. An piston is movable along the inner side of the cylinder and adjusts opening rate of the holes according to a fluid pressure difference between an inlet portion and an outlet portion.
摘要翻译：公开了一种自动减压阀。主体包括用于流体流动的中空部分，入口部分和出口部分，并且具有内部空间。圆筒安装在中空部分的内部，并且在其壁上形成有至少两个孔。活塞可沿气缸的内侧移动，并且根据入口部分和出口部分之间的流体压力差调节孔的打开速度。

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