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11. 发明申请

US20210170544A1 POLISHING METHOD AND POLISHING APPARATUS 有权
公开(公告)号：US20210170544A1
公开(公告)日：2021-06-10
申请号：US17110797
申请日：2020-12-03
申请人： EBARA CORPORATION
发明人： Keita Yagi , Yoichi Shiokawa , Toshimitsu Sasaki , Yuki Watanabe , Nachiketa Chauhan
IPC分类号： B24B49/12 , B24B37/013
摘要： A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

12. 发明授权

US10665487B2 Substrate processing apparatus, substrate processing system, and substrate processing method 有权
公开(公告)号：US10665487B2
公开(公告)日：2020-05-26
申请号：US15305088
申请日：2015-04-17
申请人： EBARA CORPORATION
发明人： Itsuki Kobata , Keita Yagi , Katsuhide Watanabe , Yoichi Shiokawa , Toru Maruyama , Nobuyuki Takahashi
IPC分类号： H01L21/677 , H01L21/3105 , H01L21/683 , H01L21/306 , H01L21/321 , H01L21/67 , B24B37/20 , H01L21/311 , H01L21/3213 , B24B37/04 , H01L21/66
摘要： An object of the present invention is to improve a substrate processing apparatus using the CARE method.The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

13. 发明授权

US10399203B2 Polishing method and polishing apparatus 有权
公开(公告)号：US10399203B2
公开(公告)日：2019-09-03
申请号：US15304829
申请日：2015-04-10
申请人： EBARA CORPORATION
发明人： Yoichi Kobayashi , Keita Yagi , Masaki Kinoshita , Yoichi Shiokawa
IPC分类号： B24B49/05 , B24B49/02 , B24B49/04 , B24B37/013 , B24B37/10 , B24B37/32 , B24B37/34 , H01L21/66 , B24B49/03 , B24B49/12 , H01L21/67
摘要： The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

14. 发明申请

US20220375775A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD 有权
公开(公告)号：US20220375775A1
公开(公告)日：2022-11-24
申请号：US17881508
申请日：2022-08-04
申请人： EBARA CORPORATION
发明人： Itsuki Kobata , Keita Yagi , Katsuhide Watanabe , Yoichi Shiokawa , Toru Maruyama , Nobuyuki Takahashi
IPC分类号： H01L21/677 , H01L21/3105 , H01L21/67 , H01L21/311 , H01L21/306 , H01L21/321 , H01L21/3213 , B24B37/04 , H01L21/66 , B24B37/20 , H01L21/683
摘要： An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

15. 发明申请

US20220371153A1 POLISHING APPARATUS AND POLISHING METHOD 有权
公开(公告)号：US20220371153A1
公开(公告)日：2022-11-24
申请号：US17680779
申请日：2022-02-25
申请人： EBARA CORPORATION
发明人： Toshimitsu Sasaki , Keita Yagi , Yoichi Shiokawa
IPC分类号： B24B37/013 , B24B37/32 , B24B49/04 , B24B49/10 , B24B49/12 , B24B49/16
摘要： A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

16. 发明申请

US20210402550A1 POLISHING METHOD, POLISHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM 有权
公开(公告)号：US20210402550A1
公开(公告)日：2021-12-30
申请号：US17340548
申请日：2021-06-07
申请人： EBARA CORPORATION
发明人： Yoichi Shiokawa , Keita Yagi , Yuki Watanabe , Nachiketa Chauhan
IPC分类号： B24B37/013
摘要： A polishing method capable of measuring a film thickness of a substrate, such as a semiconductor wafer, having various structural elements on its surface with high accuracy is disclosed. The polishing method includes: generating spectra of reflected lights from measurement points on a substrate; classifying the spectra based on a shape of each spectrum into primary spectra belonging to a first group and a secondary spectrum belonging to a second group; determining film thicknesses of the substrate from the primary spectra; and determining a film thickness at a measurement point corresponding to the secondary spectrum using the primary spectra or the film thicknesses.

17. 发明授权

US09550269B2 Polishing device and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US09550269B2
公开(公告)日：2017-01-24
申请号：US14664691
申请日：2015-03-20
申请人： EBARA CORPORATION
发明人： Yoichi Shiokawa , Keita Yagi , Yoichi Kobayashi
IPC分类号： B24B49/04 , B24B37/005 , H01L21/66 , B24B37/04 , H01L21/321
CPC分类号： B24B37/005 , B24B37/042 , B24B49/04 , H01L21/3212 , H01L22/12 , H01L22/26
摘要： The polishing device includes an edge chamber that presses the surface to be polished against the polishing pad by pressing a back side of the surface to be polished of the wafer, a thickness measuring unit that estimates a remaining film profile of the surface to be polished of the wafer in realtime during polishing, and a closed loop control device that controls a pressing force on the back side of the surface to be polished by the edge chamber in accordance with a measurement result by the thickness measuring unit during polishing. The closed loop control device controls not only the pressing by the edge chamber during polishing, but also the pressure of a retainer ring as a periphery of the edge chamber affecting the pressing of the surface to be polished against the polishing pad.
摘要翻译：抛光装置包括：边缘室，其通过按压晶片的待抛光表面的背面将待抛光表面压靠抛光垫;厚度测量单元，其估计要抛光表面的剩余膜轮廓在抛光期间实时地实现晶片，以及闭环控制装置，其根据研磨期间的厚度测量单元的测量结果来控制由边缘室根据待抛光表面的背侧的按压力。闭环控制装置不仅控制抛光期间边缘室的按压，而且控制作为边缘室的周边的保持环的压力，从而影响待抛光表面对抛光垫的冲压。

18. 发明授权

US08965555B2 Dressing method, method of determining dressing conditions, program for determining dressing conditions, and polishing apparatus 有权
标题翻译：敷料方法，确定敷料条件的方法，确定敷料条件的程序和抛光装置
公开(公告)号：US08965555B2
公开(公告)日：2015-02-24
申请号：US14150068
申请日：2014-01-08
申请人： Ebara Corporation
发明人： Akira Fukuda , Yoshihiro Mochizuki , Yutaka Wada , Yoichi Shiokawa , Hirokuni Hiyama
IPC分类号： G06F19/00 , G05B11/01 , G05B19/18 , B24B49/00 , B24B1/00 , G01D1/00 , G06F17/50 , B24B53/017
CPC分类号： B24B53/017
摘要： A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.
摘要翻译：一种方法用抛光件与金刚石修整器连接，金刚石修整器具有布置在其表面上的金刚石颗粒。该方法包括通过对抛光构件的表面上的金刚石修整器的滑动距离的分布的模拟进行模拟，以及在确定的修整条件下用金刚石修整器修整抛光构件来确定修整条件。模拟包括计算根据推入抛光构件的金刚石颗粒的深度校正的滑动距离。

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