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    • 13. 发明申请
    • Method and apparatus for solar heating a leach solution
    • 用于太阳能加热浸提液的方法和装置
    • US20070183950A1
    • 2007-08-09
    • US11348685
    • 2006-02-07
    • Richard Lane
    • Richard Lane
    • C22B3/00F25B29/00B01F1/00
    • C22B3/04C22B3/02Y02P10/234
    • A method and apparatus for solar heating a leach solution prior to its distribution over an ore heap. The apparatus includes a solar heating device that is positioned adjacent to the ore heap to elevate the temperature of the leach solution above ambient. The solar heater includes a transparent cover film attached to a flexible base material along the side edges of the base material. A flow of air is introduced between the cover film and the base material to create an open interior. A series of heat absorbing tubes each extend through the open interior and receive the supply of leach solution such that the leach solution is heated by solar energy within the heat absorbing tube.
    • 一种用于在其分配在矿石堆之前太阳能加热浸出溶液的方法和装置。 该装置包括一个太阳能加热装置,其位于矿堆附近,以将浸出溶液的温度升高到环境温度以上。 太阳能加热器包括沿着基材的侧边缘附接到柔性基材的透明覆盖膜。 在覆盖膜和基材之间引入空气流以产生开放的内部。 一系列吸热管各自延伸通过开放的内部并接收浸出溶液的供应,使得浸出溶液由吸热管内的太阳能加热。
    • 14. 发明申请
    • Method for securities trading using variable product orders
    • 使用可变产品订单进行证券交易的方法
    • US20070061233A1
    • 2007-03-15
    • US11227444
    • 2005-09-15
    • Vladan JovanovicVeselin StanicRichard LaneAdnan Beganovic
    • Vladan JovanovicVeselin StanicRichard LaneAdnan Beganovic
    • G06Q40/00
    • G06Q40/04G06Q40/06
    • A method for trading securities. A trader generates a variable derivative product order that identifies at least a derivative product, an underlying financial product or instrument, a pricing formula, and values of price determination variables needed by the pricing formula to establish a price for the derivative. The variable product order is transmitted electronically to an exchange. The exchange calculates the offered price of the derivative using a value of the underlying product and publishes offers to potential traders. The offered price is recalculated as the value of the underlying products changes and republished to potential traders. Trades may then be executed based on the offered prices. Hedging trades may be executed in combination with trades made based on the variable derivative product orders.
    • 交易证券的方法。 交易者生成可变衍生产品订单,其至少识别衍生产品,基础金融产品或工具,定价公式和定价公式所需的价格确定变量的值,以确定衍生工具的价格。 可变产品订单以电子方式传送到交易所。 交易所使用潜在产品的价值计算衍生品的发行价格,并向潜在交易者发布报价。 所提供的价格将重新计算,因为底层产品的价值发生变化并重新发布给潜在交易商。 然后可以根据提供的价格执行交易。 对冲交易可以与基于可变衍生产品订单的交易结合执行。
    • 18. 发明申请
    • A method of forming semiconductor structures
    • 一种形成半导体结构的方法
    • US20060234469A1
    • 2006-10-19
    • US11409134
    • 2006-04-21
    • David DickersonRichard LaneCharles DennisonKunal ParekhMark FischerJohn Zahurak
    • David DickersonRichard LaneCharles DennisonKunal ParekhMark FischerJohn Zahurak
    • H01L21/76
    • H01L21/76232H01L21/0332H01L21/76235
    • In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions. In another aspect, the invention includes an isolation region forming method comprising: a) forming a silicon nitride layer over a substrate; b) forming a masking layer over the silicon nitride layer; c) forming a pattern of openings extending through the masking layer to the silicon nitride layer; d) extending the openings through the silicon nitride layer to the underlying substrate, the silicon nitride layer having edge regions proximate the openings and having a central region between the edge regions; e) extending the openings into the underlying substrate; f) after extending the openings into the underlying substrate, reducing a thickness of the silicon nitride layer at the edge regions to thin the edge regions relative to the central region; and g) forming oxide within the openings.
    • 一方面,本发明包括一种隔离区形成方法,包括:a)在衬底上形成氧化物层; b)在所述氧化物层上形成氮化物层,所述氮化物层和氧化物层具有延伸穿过其中的开口图案以暴露所述下面的衬底的部分; c)蚀刻下面的衬底的暴露部分以形成延伸到衬底中的开口; d)在蚀刻下面的衬底的暴露部分之后,去除氮化物层的部分,同时留下一些保留在衬底上的氮化物层; 以及e)在去除所述氮化物层的部分之后,在所述衬底的所述开口内形成氧化物,所述开口内的氧化物形成至少部分隔离区域。 另一方面,本发明包括一种隔离区形成方法,包括:a)在衬底上形成氮化硅层; b)在氮化硅层上形成掩模层; c)形成延伸穿过掩模层的开口图案到氮化硅层; d)将开口穿过氮化硅层延伸到下面的衬底,氮化硅层具有靠近开口的边缘区域,并且在边缘区域之间具有中心区域; e)将开口延伸到下面的基底中; f)在将开口延伸到下面的基底之后,减小边缘区域处的氮化硅层的厚度,以使边缘区域相对于中心区域变薄; 和g)在开口内形成氧化物。
    • 20. 发明申请
    • Method for forming conductive material in opening and structure regarding same
    • 用于在开口中形成导电材料的方法及其结构
    • US20050186779A1
    • 2005-08-25
    • US11113918
    • 2005-04-25
    • Howard RhodesRichard Lane
    • Howard RhodesRichard Lane
    • H01L21/02H01L21/768H01L21/8242H01L27/108H01L21/4763
    • H01L27/10852H01L21/76877H01L27/10808H01L27/10855H01L28/91
    • Method and structure use support layers to assist in planarization processes to form conductive materials (e.g., a Group VIII metal) in an opening. Further, such method and structure may use a Group VIII metal as an etch stop or end point for the planarization process with subsequent etching to remove undesired portions of the Group VIII metal. One exemplary method of providing a conductive material in an opening includes providing a substrate assembly having at least one surface and providing an opening defined through the surface of the substrate assembly. The opening is defined by at least one surface. At least one conductive material (e.g., at least one Group VIII metal such platinum and/or rhodium) is formed within the opening on the at least one surface defining the opening and on at least a portion of the substrate assembly surface. A support film (e.g., an oxide material) is formed over the conductive material and a fill material (e.g., a resist material) is formed over at least a portion of the support film. The fill material at least fills the opening. Thereafter, at least the fill material outside of the opening is removed by planarization. The support film outside of the opening, the at least one conductive material outside of the opening, the fill material within the opening, and the support film within the opening are then removed.
    • 方法和结构使用支撑层来辅助平面化工艺以在开口中形成导电材料(例如,VIII族金属)。 此外,这种方法和结构可以使用VIII族金属作为用于平坦化工艺的蚀刻停止点或终点,随后进行蚀刻以除去第VIII族金属的不期望的部分。 在开口中提供导电材料的一个示例性方法包括提供具有至少一个表面的基底组件,并提供通过基底组件的表面限定的开口。 开口由至少一个表面限定。 至少一个导电材料(例如,至少一种VIII族金属,例如铂和/或铑)形成在限定开口的至少一个表面上的开口内以及基板组件表面的至少一部分上。 在导电材料之上形成支撑膜(例如,氧化物材料),并且在支撑膜的至少一部分上形成填充材料(例如抗蚀剂材料)。 填充材料至少填满开口。 此后,至少通过平面化去除开口外部的填充材料。 开口外部的支撑膜,开口外部的至少一个导电材料,开口内的填充材料以及开口内的支撑膜然后被去除。