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11. 发明授权

US08183588B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08183588B2
公开(公告)日：2012-05-22
申请号：US12401843
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L31/052
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
摘要翻译：公开了一种发光二极管，其包括导电基板，导电基板上的接合金属和接合金属上的阻挡金属层。镜面层被阻挡金属层封装，并通过阻挡层与结合金属隔离。 p型氮化镓外延层位于封装反射镜上，氮化铟镓有源层位于p型层上，n型氮化镓层位于铟镓氮层上，形成接合焊盘到n型氮化镓层。

12. 发明授权

US08154039B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08154039B2
公开(公告)日：2012-04-10
申请号：US12401832
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译：公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。

13. 发明授权

US08076670B2 LED with conductively joined bonding structure 有权
标题翻译： LED与导电接合结合结构
公开(公告)号：US08076670B2
公开(公告)日：2011-12-13
申请号：US12614700
申请日：2009-11-09
申请人： David Beardsley Slater, Jr. , John Adam Edmond
发明人： David Beardsley Slater, Jr. , John Adam Edmond
IPC分类号： H01L29/08 , H01L29/74
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10−5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.
摘要翻译：公开了一种LED，其包括导电基座，导电接合到基座的总体积小于3×10-5mm 3的接合焊盘，与基座相对的接合焊盘上的第一欧姆接触，至少包括第一欧姆接触上的p型层和n型层，以及与第一欧姆接触相对的外延区的电极。

14. 发明申请

US20090068774A1 LED Bonding Structures and Methods of Fabricating LED Bonding Structures 有权
标题翻译： LED接合结构和LED结合结构的制造方法
公开(公告)号：US20090068774A1
公开(公告)日：2009-03-12
申请号：US12268466
申请日：2008-11-11
申请人： David Beardsley Slater, JR. , John Adam Edmond
发明人： David Beardsley Slater, JR. , John Adam Edmond
IPC分类号： H01L21/50
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10−5 mm3. The LED chip is bonded to a submount via thermocompression or thermosonic bonding.
摘要翻译：公开了一种用于制造LED的方法。该方法包括提供具有包括至少p型层和n型层的外延区域的LED芯片，形成在p型层或者p型层中的至少一个上的欧姆接触 n型层和形成在欧姆接触上的接合焊盘。接合垫的总体积小于约3×10 -5 mm 3。 LED芯片通过热压或热超声键合键合到底座。

15. 发明授权

US07294859B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US07294859B2
公开(公告)日：2007-11-13
申请号：US11057661
申请日：2005-02-14
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L29/15
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

16. 发明授权

US07259402B2 High efficiency group III nitride-silicon carbide light emitting diode 有权
标题翻译：高效率III族氮化硅 - 碳化硅发光二极管
公开(公告)号：US07259402B2
公开(公告)日：2007-08-21
申请号：US10951042
申请日：2004-09-22
申请人： John Adam Edmond , Jayesh Bharathan , David Beardsley Slater, Jr.
发明人： John Adam Edmond , Jayesh Bharathan , David Beardsley Slater, Jr.
IPC分类号： H01L31/02
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分从而减小接合的基板，有源部分和副安装结构的整体厚度。所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的有源部分和引线框架之间的电接触。

17. 发明授权

US08174037B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08174037B2
公开(公告)日：2012-05-08
申请号：US11082470
申请日：2005-03-17
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

18. 发明授权

US07675068B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US07675068B2
公开(公告)日：2010-03-09
申请号：US11243581
申请日：2005-10-05
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译：公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

19. 发明申请

US20090166659A1 High Efficiency Group III Nitride LED with Lenticular Surface 有权
标题翻译：高效率III组氮化物LED与眼表面
公开(公告)号：US20090166659A1
公开(公告)日：2009-07-02
申请号：US12401832
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译：公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。

20. 发明授权

US07462861B2 LED bonding structures and methods of fabricating LED bonding structures 有权
标题翻译： LED结合结构和制造LED结合结构的方法
公开(公告)号：US07462861B2
公开(公告)日：2008-12-09
申请号：US11114639
申请日：2005-04-26
申请人： David Beardsley Slater, Jr. , John Adam Edmond
发明人： David Beardsley Slater, Jr. , John Adam Edmond
IPC分类号： H01L29/08 , H01L29/74
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pad is designed to accept 30 g to 70 g of force or more without squeeze-out.
摘要翻译： LED芯片包括适合于热或热压接的接合焊盘，例如Sn，AuSn或其它金属。选择焊盘的物理尺寸以阻止或防止在具有或不具有焊剂的热压或热超声粘合期间焊料挤出。在一些实施例中，AuSn接合焊盘设计成在不挤出的情况下接受30g至70g的力或更多的力。

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