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11. 发明授权

US5628938A Method of making a ceramic composite by infiltration of a ceramic preform 失效
标题翻译：通过陶瓷预制件的渗透制造陶瓷复合材料的方法
公开(公告)号：US5628938A
公开(公告)日：1997-05-13
申请号：US342483
申请日：1994-11-18
申请人： D. Sangeeta , Svante Prochazka , Krishan L. Luthra
发明人： D. Sangeeta , Svante Prochazka , Krishan L. Luthra
IPC分类号： C04B35/573 , B05B3/00
CPC分类号： C04B35/573
摘要： A method for making a composite ceramic article by infiltration of a sintered ceramic preform with an infiltrate phase. The ceramic preform is made by directionally solidifying a liquid medium containing a dispersion of ceramic particles to produce a green, porous ceramic preform a plurality of interconnected lamelli that are partially separated from one another by complementary interlamellar regions, removing the solidified liquid medium and sintering the ceramic preform. This method may be used to make silicon carbide composites where a silicon carbide preform is first infiltrated with carbon to coat the lamelli of the preform, followed by infiltration of the carbon coated preform with molten silicon, whereby the molten silicon and carbon react to form silicon carbide in the interlamellar regions. The ceramic preform may also be coated with a thin, diffusion-inhibiting ceramic layer prior to infiltration in order to prevent interdiffusion between the lamelli of the preform and the infiltrate phase, and provide a plurality of mechanically weak, crack deflecting interfaces within the composite article.
摘要翻译：一种通过浸渗相的烧结陶瓷预型体的渗透制造复合陶瓷制品的方法。通过定向凝固含有陶瓷颗粒分散体的液体介质来制造陶瓷预制件，以通过互补的层间区域彼此部分地分离出多个相互连接的薄片以形成多孔互连的薄片，除去固化的液体介质并烧结陶瓷预制件。该方法可用于制造碳化硅复合材料，其中碳化硅预成型件首先用碳渗透以涂覆预成型件的薄片，随后用熔融硅渗透碳涂覆的预制件，由此熔融硅和碳反应形成硅在层间区域的碳化物。陶瓷预制件还可以在渗透之前涂覆有薄的扩散抑制性陶瓷层，以防止预成型件的薄片与渗透相之间的相互扩散，并且在复合制品内提供多个机械弱的裂纹偏转界面。

12. 发明授权

US5599624A Amorphous silicon oxycarbide coated silicon carbide or carbon fibers 失效
标题翻译：无定形碳硅碳涂层碳化硅或碳纤维
公开(公告)号：US5599624A
公开(公告)日：1997-02-04
申请号：US498272
申请日：1995-07-03
申请人： Svante Prochazka
发明人： Svante Prochazka
IPC分类号： C04B35/628 , C04B41/45 , D01F11/12 , D02G3/00
CPC分类号： C04B35/62863 , C04B35/6268 , C04B35/62897 , C04B41/009 , C04B41/4584 , D01F11/123 , D01F11/126 , C04B2235/3895 , C04B2235/483 , C04B2235/5244 , C04B2235/5248 , Y10T428/2933 , Y10T428/2938 , Y10T428/294 , Y10T428/2949 , Y10T428/2955 , Y10T428/2956
摘要： Fibers having reduced surface roughness have a continuous coating of a silicone resin that undergoes pyrolysis in hydrogen or helium to form a hard, amorphous solid coat containing silicon, oxygen, and carbon. This silicon oxycarbide glass coating has exceptional high temperature strength and chemical stability compared to even vitreous silica. The coating is resistant to crystallization and oxidation at temperatures above 1000.degree. C.
摘要翻译：具有降低的表面粗糙度的纤维具有在氢或氦中热解的硅树脂的连续涂层，以形成含有硅，氧和碳的硬的无定形固体涂层。该硅碳硅玻璃涂层与甚至玻璃态二氧化硅相比具有优异的高温强度和化学稳定性。涂层在高于1000℃的温度下耐结晶和氧化。

13. 发明授权

US4119475A Sintering of silicon nitride using Mg and Be additives 失效
标题翻译：使用Mg和Be添加剂对氮化硅进行烧结
公开(公告)号：US4119475A
公开(公告)日：1978-10-10
申请号：US849178
申请日：1977-11-07
申请人： Svante Prochazka , Charles D. Greskovich , Richard J. Charles , Robert A. Giddings
发明人： Svante Prochazka , Charles D. Greskovich , Richard J. Charles , Robert A. Giddings
IPC分类号： C04B35/584 , C04B35/593 , H01B3/12 , C04B35/58
CPC分类号： H01B3/12 , C04B35/593 , C04B35/5935
摘要： A particulate dispersion of silicon nitride, magnesium additive and beryllium additive is formed into a green body and sintered at a temperature ranging from about 1800.degree. C to about 2200.degree. C in a sintering atmosphere of nitrogen at superatmospheric pressure producing a sintered body with a density ranging from about 80% to about 100%.
摘要翻译：将氮化硅，镁添加剂和铍添加剂的颗粒分散体形成为生坯，并在大气压下在氮气的烧结气氛中在约1800℃至约2200℃的温度下烧结，产生具有密度的烧结体从约80％到约100％。

14. 发明授权

US4108929A Hot pressed silicon carbide 失效
标题翻译：热压碳化硅
公开(公告)号：US4108929A
公开(公告)日：1978-08-22
申请号：US695246
申请日：1976-06-11
申请人： Svante Prochazka , William J. Dondalski
发明人： Svante Prochazka , William J. Dondalski
IPC分类号： C04B35/575 , C04B35/52
CPC分类号： C04B35/575
摘要： A dense silicon carbide having improved properties is disclosed which is prepared by the addition of a carbonaceous additive to a boron doped silicon carbide and hot pressing the mixture at a sufficient temperature and pressure whereby a dense substantially nonporous ceramic is formed.
摘要翻译：公开了一种具有改进性能的致密碳化硅，其通过向硼掺杂的碳化硅中加入碳质添加剂并在足够的温度和压力下热压该混合物，从而形成致密的基本上无孔的陶瓷。

15. 发明授权

US4041117A Silicon carbide sintered body 失效
标题翻译：碳化硅烧结体
公开(公告)号：US4041117A
公开(公告)日：1977-08-09
申请号：US698483
申请日：1976-06-21
申请人： Svante Prochazka
发明人： Svante Prochazka
IPC分类号： C04B35/565 , C04B35/56 , C04B35/64
CPC分类号： C04B35/565
摘要： A silicon carbide sintered body characterized by its microstructural stability at high temperatures is produced by forming a mixture of .beta.-silicon carbide powder, .alpha.-silicon carbide seeding powder, boron additive and a carbonaceous additive into a green body and sintering it to produce a sintered body with a density of at least 80% wherein at least 70% by weight of the silicon carbide is .alpha.-silicon carbide.
摘要翻译：特征在于其在高温下的微结构稳定性的碳化硅烧结体通过将β-碳化硅粉末，α-碳化硅碳化物粉末，硼添加剂和碳质添加剂的混合物形成到生坯体中并烧结以产生烧结具有至少80％的密度，其中至少70重量％的碳化硅是α-碳化硅。

16. 发明授权

US4017319A Si.sub.3 N.sub.4 formed by nitridation of sintered silicon compact containing boron 失效
标题翻译： Si {hd 3 {b N {HD 4 {B通过氮化烧结硅压电体形成硼
公开(公告)号：US4017319A
公开(公告)日：1977-04-12
申请号：US646967
申请日：1976-01-06
申请人： Charles D. Greskovich , Svante Prochazka
发明人： Charles D. Greskovich , Svante Prochazka
IPC分类号： C04B35/591 , C04B35/70 , C04B35/58 , F27B9/10
CPC分类号： C04B35/591
摘要： A polycrystalline silicon nitride body is produced by shaping a particulate mixture of silicon powder and boron into a green body, sintering the body to a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having pores which are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.
摘要翻译：通过将硅粉末和硼的颗粒状混合物成形为生坯，将本体烧结至硅理论密度的60％至75％的密度来制造多晶氮化硅体，所述烧结体具有互连的孔并且向身体的表面开口，并使所述烧结体与气态氮反应以将其转化成氮化硅。

17. 发明授权

US3968194A Dense polycrystalline silicon carbide 失效
公开(公告)号：US3968194A
公开(公告)日：1976-07-06
申请号：US619953
申请日：1975-10-06
申请人： Svante Prochazka
发明人： Svante Prochazka
IPC分类号： C04B35/575 , H01B1/04 , C04B35/56 , C04B35/14 , C04B35/52
CPC分类号： C04B35/575 , H01B1/04
摘要： A dense silicon carbide material having improved electrically conducting properties is disclosed which is prepared by forming a homogeneous dispersion of silicon carbide, a sufficient amount of a boron containing additive, and 3.5-10.0% by weight of silicon nitride and hot pressing the dispersion at a sufficient temperature and pressure whereby a dense substantially nonporous ceramic is formed. The silicon carbide material can be machined by electrical discharge machining or by electrochemical machining.

18. 发明授权

US5896432A Brazeless electrochemical corrosion potential sensor 失效
标题翻译：无锡电化学腐蚀电位传感器
公开(公告)号：US5896432A
公开(公告)日：1999-04-20
申请号：US928123
申请日：1997-09-12
申请人： Young Jin Kim , Samson Hettiarachchi , Minyoung Lee , Svante Prochazka
发明人： Young Jin Kim , Samson Hettiarachchi , Minyoung Lee , Svante Prochazka
IPC分类号： G01N27/26 , G01N17/02 , G21C17/00 , G21C9/00 , G01N27/30
CPC分类号： G21C17/00 , G01N17/02 , G21Y2002/103
摘要： An electrochemical corrosion potential sensor is fabricated by initially joining an electrical conductor to a sensor tip. An electrical cable is joined to the tip conductor. Ceramic powder is fused under heat around the tip conductor to form an integral annular electrically insulating band therearound to insulate the tip from the cable. The band may be formed by plasma spraying, or it may be molded and sintered to seal it to the tip and conductor without brazing. In a preferred embodiment, the band is formed of yttria-stabilized-zirconia or magnesia-stabilized-zirconia.
摘要翻译：通过最初将电导体连接到传感器尖端来制造电化学腐蚀电位传感器。电缆连接到尖端导体。陶瓷粉末在尖端导体周围加热熔化，以在其周围形成一体的环形电绝缘带，以使尖端与电缆绝缘。带可以通过等离子喷涂形成，或者可以将其模制和烧结以将其密封到尖端和导体而不进行钎焊。在优选的实施方案中，该带由氧化钇稳定的氧化锆或氧化镁稳定的氧化锆形成。

19. 发明授权

US4427785A Optically translucent ceramic 失效
标题翻译：光学半透明陶瓷
公开(公告)号：US4427785A
公开(公告)日：1984-01-24
申请号：US381822
申请日：1982-05-25
申请人： Svante Prochazka , Frederic J. Klug
发明人： Svante Prochazka , Frederic J. Klug
IPC分类号： C04B35/115 , C04B35/18 , C04B35/645
CPC分类号： C04B35/6455 , C04B35/18 , Y10S264/91 , Y10S501/90
摘要： Optically translucent theoretically dense body of mullite is produced by pressing an amorphous mixed oxide powder composition of from about 72.5 weight % to about 76.5 weight % Al.sub.2 O.sub.3 /balance SiO.sub.2 into a compact of density of at least 1.0 g/cc, sintering the compact in oxygen or a vacuum of 0.05 torr to 1 torr producing a gas-impermeable compact, hot isostatically pressing the gas-impermeable compact to theoretical density, and with respect to compositions ranging from higher than about 74 wt % Al.sub.2 O.sub.3 /balance SiO.sub.2, annealing the theoretically dense body.
摘要翻译：通过将约72.5重量％至约76.5重量％的Al 2 O 3 /平衡SiO 2的无定形混合氧化物粉末组合物压制成至少为1.0g / cc的密度的压块，将氧化物烧结成型，从而产生光学半透明的理论致密的莫来石体或者为0.05torr至1torr的真空，产生不透气体的压块，将不透气的压块热等静压到理论密度，并且对于高于约74重量％的Al 2 O 3 /平衡SiO 2的组成，退火理论致密身体。

20. 发明授权

US4279656A Light-transmitting silicon nitride 失效
标题翻译：透光氮化硅
公开(公告)号：US4279656A
公开(公告)日：1981-07-21
申请号：US114632
申请日：1980-01-23
申请人： Charles D. Greskovich , Svante Prochazka , John A. Palm
发明人： Charles D. Greskovich , Svante Prochazka , John A. Palm
IPC分类号： C04B35/593 , C04B35/58
CPC分类号： C04B35/593
摘要： A polycrystalline silicon nitride body having a density of at least 99.5% of the theoretical density of silicon nitride, a thickness ranging from about 0.15 mm up to but less than 0.4 mm, a minimum in-line transmission of about 5% of radiant energy at wavelengths ranging from about 0.9 micron to about 2.5 microns, and a minimum in-line transmission of about 10% at wavelengths ranging from about 2.5 microns to about 4.5 microns.
摘要翻译：密度为氮化硅理论密度的至少99.5％，厚度范围从约0.15mm至小于0.4mm的多晶硅氮化物体，最小的在线传输约5％的辐射能在波长范围为约0.9微米至约2.5微米，波长范围为约2.5微米至约4.5微米的最小直线透射率为约10％。

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