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11. 发明授权

US07666382B2 Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof 有权
标题翻译：水性碳纳米管涂布液及其施用液的制造方法
公开(公告)号：US07666382B2
公开(公告)日：2010-02-23
申请号：US11304315
申请日：2005-12-15
申请人： Eliodor G. Ghenciu , Tzong-Ru Terry Han , Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
发明人： Eliodor G. Ghenciu , Tzong-Ru Terry Han , Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
IPC分类号： D01F9/12
CPC分类号： D06M11/64 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C01B2202/02 , C01B2202/28 , D06M10/02 , D06M11/50 , D06M11/55 , D06M2101/40 , H01L51/0003 , H01L51/0048 , Y10S977/746 , Y10S977/845
摘要： Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用液体和制备涂抹液的方法。施用液体可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在含水液体介质中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

12. 发明申请

US20100051880A1 AQUEOUS CARBON NANOTUBE APPLICATOR LIQUIDS AND METHODS FOR PRODUCING APPLICATOR LIQUIDS THEREOF 有权
标题翻译：水性碳纳米管应用液体及其生产应用液体的方法
公开(公告)号：US20100051880A1
公开(公告)日：2010-03-04
申请号：US12612445
申请日：2009-11-04
申请人： Eliodor G. Ghenciu , Tzong-Ru T. Han , Ramesh SIVARAJAN , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
发明人： Eliodor G. Ghenciu , Tzong-Ru T. Han , Ramesh SIVARAJAN , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
IPC分类号： H01B1/04
CPC分类号： D06M11/64 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C01B2202/02 , C01B2202/28 , D06M10/02 , D06M11/50 , D06M11/55 , D06M2101/40 , H01L51/0003 , H01L51/0048 , Y10S977/746 , Y10S977/845
摘要： Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用液体和制备涂抹液的方法。施用液体可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在含水液体介质中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

13. 发明授权

US08586424B2 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same 有权
标题翻译：包含混合纳米颗粒和碳纳米管的开关材料及其制造和使用方法
公开(公告)号：US08586424B2
公开(公告)日：2013-11-19
申请号：US13074792
申请日：2011-03-29
申请人： Eliodor G. Ghenciu , Thomas Rueckes , Thierry Yao , Thomas Kocab
发明人： Eliodor G. Ghenciu , Thomas Rueckes , Thierry Yao , Thomas Kocab
IPC分类号： H01L21/332
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/0069 , G11C13/025 , G11C2013/009 , G11C2213/79 , H01L27/2436 , H01L27/285 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L51/0003 , H01L51/0045 , H01L51/0048 , Y10T428/25
摘要： An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.
摘要翻译：公开了一种用于在基底上形成复合制品的改进的切换材料。第一体积的纳米管与第二体积的纳米尺寸颗粒以相对于第一体积纳米管的预定比例组合以形成混合物。然后可以通过旋涂工艺将该混合物沉积在基材上作为相对较厚的复合制品。复合制品比具有纳米管的切换制品具有改进的开关性能。还公开了一种用于形成基本均匀的纳米级碳纳米颗粒的方法，其包含一种或多种同素异形体的碳。

14. 发明授权

US07915637B2 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same 有权
标题翻译：包含混合纳米颗粒和碳纳米管的开关材料及其制造和使用方法
公开(公告)号：US07915637B2
公开(公告)日：2011-03-29
申请号：US12274033
申请日：2008-11-19
申请人： Eliodor G. Ghenciu , Thomas Rueckes , Thierry Yao , Tom Kocab
发明人： Eliodor G. Ghenciu , Thomas Rueckes , Thierry Yao , Tom Kocab
IPC分类号： H01L21/00
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/0069 , G11C13/025 , G11C2013/009 , G11C2213/79 , H01L27/2436 , H01L27/285 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L51/0003 , H01L51/0045 , H01L51/0048 , Y10T428/25
摘要： An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.
摘要翻译：公开了一种用于在基底上形成复合制品的改进的切换材料。第一体积的纳米管与第二体积的纳米尺寸颗粒以相对于第一体积纳米管的预定比例组合以形成混合物。然后可以通过旋涂工艺将该混合物沉积在基材上作为相对较厚的复合制品。复合制品比具有纳米管的切换制品具有改进的开关性能。还公开了一种用于形成基本均匀的纳米级碳纳米颗粒的方法，其包含一种或多种同素异形体的碳。

15. 发明授权

US07011716B2 Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 失效
公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
申请人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
发明人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

16. 发明授权

US06735978B1 Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
标题翻译：半导体制造应用中超临界流体的处理
公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
申请人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译：一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中。

17. 发明申请

US20080271991A1 Apparatus and Method for Supercritical Fluid Removal or Deposition Processes 审中-公开
标题翻译：超临界流体去除或沉积过程的设备和方法
公开(公告)号：US20080271991A1
公开(公告)日：2008-11-06
申请号：US11911615
申请日：2006-04-17
申请人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum , Pamela M. Visintin
发明人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum , Pamela M. Visintin
IPC分类号： C23C14/00
CPC分类号： C23C18/00 , B08B7/0021 , G03F7/422 , G03F7/427 , H01L21/02101
摘要： A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.
摘要翻译：一种用于将薄膜沉积到微电子器件上的连续流超临界流体（SCF）装置和方法，或从其上具有相同的微电子装置去除不想要的层，颗粒和/或残余物。 SCF设备优选地包括动态混合器以确保SCF和其它化学组分的均匀混合。

18. 发明授权

US07223352B2 Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal 失效
标题翻译：超临界二氧化碳/化学制剂用于灰化和未镀铝的蚀刻后残留物去除
公开(公告)号：US07223352B2
公开(公告)日：2007-05-29
申请号：US10285015
申请日：2002-10-31
申请人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , H01L21/302
CPC分类号： H01L21/02071 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3245 , C11D7/50 , C11D7/5022 , C11D11/0047 , C23G5/00 , H01L21/02052 , H01L21/31133 , H01L21/32138
摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.
摘要翻译：蚀刻后残留物清洁组合物，用于从半导体衬底上的小尺寸清洁灰化或未沉淀的铝/ SiN / Si后蚀刻残留物。清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源，铝离子络合剂和任选的缓蚀剂。这样的清洁组合物克服了SCCO2作为清洗剂的固有缺陷，即SCCO2的非极性特征及其与溶解残留物中存在的物质如无机盐和极性有机化合物无关，并且与SCCO2的非极性相关必须从半导体衬底去除以进行有效的清洁。清洁组合物能够对其上具有灰化或未镀铝/ SiN / Si蚀刻后残留物的基材进行无损伤，无残留的清洁。

19. 发明授权

US07160815B2 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 失效
标题翻译：使用超临界流体/化学配方去除MEMS牺牲层
公开(公告)号：US07160815B2
公开(公告)日：2007-01-09
申请号：US10782355
申请日：2004-02-19
申请人： Michael B. Korzenski , Thomas H. Baum , Chongying Xu , Eliodor G. Ghenciu
发明人： Michael B. Korzenski , Thomas H. Baum , Chongying Xu , Eliodor G. Ghenciu
IPC分类号： H01L21/461
CPC分类号： B81C1/00936 , B08B7/0021 , B81C2201/0108 , B81C2201/117 , H01L21/02063
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
摘要翻译：描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

20. 发明授权

US07119052B2 Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers 失效
标题翻译：用于半导体晶片高效清洗/抛光的组合物和方法
公开(公告)号：US07119052B2
公开(公告)日：2006-10-10
申请号：US10602172
申请日：2003-06-24
申请人： Michael B. Korzenski , Chongying Xu , Thomas H. Baum , David Minsek , Eliodor G. Ghenciu
发明人： Michael B. Korzenski , Chongying Xu , Thomas H. Baum , David Minsek , Eliodor G. Ghenciu
IPC分类号： B01D11/00 , G03F7/42
CPC分类号： G03F7/425 , C11D7/261 , C11D7/28 , C11D7/3209 , C11D7/5013 , C11D11/0047 , H01L21/02063 , H01L21/31133 , Y10S134/902 , Y10S438/906
摘要： A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.
摘要翻译：一种组合物，其包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质攻击抑制剂和/或表面活性剂。该组合物具有用于清洁半导体晶片从而除去其后灰化残留物的特殊用途。

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