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11. 发明申请

US20100228370A1 METHOD AND SYSTEM FOR TUNING ADVANCED PROCESS CONTROL PARAMETERS 有权
标题翻译：用于调谐高级过程控制参数的方法和系统
公开(公告)号：US20100228370A1
公开(公告)日：2010-09-09
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/10
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

12. 发明授权

US08082055B2 Method for a bin ratio forecast at new tape out stage 有权
标题翻译：新磁带出站时的比例预测方法
公开(公告)号：US08082055B2
公开(公告)日：2011-12-20
申请号：US12499345
申请日：2009-07-08
申请人： Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
发明人： Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
IPC分类号： G06F19/00
CPC分类号： G06Q10/06 , G06Q30/0202
摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.
摘要翻译：公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。

13. 发明授权

US08392009B2 Advanced process control with novel sampling policy 有权
标题翻译：先进的过程控制与新的抽样政策
公开(公告)号：US08392009B2
公开(公告)日：2013-03-05
申请号：US12415366
申请日：2009-03-31
申请人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
发明人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
IPC分类号： G06F19/00 , G01R31/26 , G06K9/00 , G06F17/50 , G01T1/24
CPC分类号： G05B21/02 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.
摘要翻译：本发明提供一种半导体制造方法。该方法包括对第一多个半导体晶片执行第一处理; 基于过程质量确定对所述第一多个半导体晶片的采样率; 确定采样场和采样点到所述第一多个半导体晶片; 根据采样率，采样场和采样点测量第一多个半导体晶片的子集; 根据测量修改第二个过程; 以及将所述第二处理应用于第二多个半导体晶片。

14. 发明授权

US08394719B2 System and method for implementing multi-resolution advanced process control 有权
标题翻译：实现多分辨率高级过程控制的系统和方法
公开(公告)号：US08394719B2
公开(公告)日：2013-03-12
申请号：US13106711
申请日：2011-05-12
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou , Yen-Wei Cheng
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou , Yen-Wei Cheng
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L22/20 , G05B19/41875 , H01L22/12 , Y02P90/22 , Y02P90/26
摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method including obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer. A process variable of the process is modeled as a function of the low resolution metrology data to generate a low-resolution process model and the process variable is modeled as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
摘要翻译：描述了实现多分辨率高级过程控制（APC）的系统和方法。一个实施例是一种方法，包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据。该过程的过程变量被模型化为低分辨率度量数据的函数，以生成低分辨率过程模型，并且将过程变量建模为高分辨率度量数据的函数以生成高分辨率过程模型。该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合，以生成多分辨率过程模型，其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应，以控制过程模块的性能。

15. 发明申请

US20100255613A1 SYSTEM AND METHOD FOR IMPLEMENTING MULTI-RESOLUTION ADVANCED PROCESS CONTROL 有权
标题翻译：用于实施多分辨率高级过程控制的系统和方法
公开(公告)号：US20100255613A1
公开(公告)日：2010-10-07
申请号：US12416595
申请日：2009-04-01
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： G05B19/41875 , H01L22/12 , H01L22/20 , Y02P90/22 , Y02P90/26
摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.
摘要翻译：描述了用于实现多分辨率高级过程控制（“APC”）的系统和方法。一个实施例是一种用于从半导体晶片制造IC的方法，包括在半导体晶片上执行第一工艺; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

16. 发明申请

US20100249974A1 ADVANCED PROCESS CONTROL WITH NOVEL SAMPLING POLICY 有权
标题翻译：具有新型采样策略的高级过程控制
公开(公告)号：US20100249974A1
公开(公告)日：2010-09-30
申请号：US12415366
申请日：2009-03-31
申请人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
发明人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
IPC分类号： G05B13/02 , G06F17/00
CPC分类号： G05B21/02 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling arte, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor waders.
摘要翻译：本发明提供一种半导体制造方法。该方法包括对第一多个半导体晶片执行第一处理; 基于过程质量确定对所述第一多个半导体晶片的采样率; 确定采样场和采样点到所述第一多个半导体晶片; 根据采样场，采样场和采样点测量第一多个半导体晶片的子集; 根据测量修改第二个过程; 以及将所述第二处理应用于第二多个半导体缓冲器。

17. 发明授权

US08219341B2 System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) with routing model 有权
标题翻译：使用路由模型实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US08219341B2
公开(公告)日：2012-07-10
申请号：US12411680
申请日：2009-03-26
申请人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L22/14
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括在多个经处理的晶片批次上执行金属间（“IM”）WAT; 使用批次采样处理来选择所述多个晶片批次的子集; 以及使用晶片批次子集选择样品晶片组，因此在样品晶片组的晶片上执行IM WAT以获得IM WAT数据。该方法还包括从针对样品晶片组获得的IM WAT数据估计经处理的晶片批次中的所有晶片的最终WAT数据，并将估计的最终WAT数据提供给用于控制过程的WAT APC过程。

18. 发明授权

US07951615B2 System and method for implementing multi-resolution advanced process control 有权
标题翻译：实现多分辨率高级过程控制的系统和方法
公开(公告)号：US07951615B2
公开(公告)日：2011-05-31
申请号：US12416595
申请日：2009-04-01
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： G05B19/41875 , H01L22/12 , H01L22/20 , Y02P90/22 , Y02P90/26
摘要： One embodiment is a method for fabricating ICs from a semiconductor wafer. The method includes performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further includes removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.
摘要翻译：一个实施例是用于从半导体晶片制造IC的方法。该方法包括在半导体晶片上执行第一处理; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

19. 发明申请

US20100250172A1 SYSTEM AND METHOD FOR IMPLEMENTING WAFER ACCEPTANCE TEST ("WAT") ADVANCED PROCESS CONTROL ("APC") WITH ROUTING MODEL 有权
标题翻译：使用路由模型实现波形接收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US20100250172A1
公开(公告)日：2010-09-30
申请号：US12411680
申请日：2009-03-26
申请人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00 , G01N37/00
CPC分类号： H01L22/20 , H01L22/14
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括在多个经处理的晶片批次上执行金属间（“IM”）WAT; 使用批次采样处理来选择所述多个晶片批次的子集; 以及使用晶片批次子集选择样品晶片组，因此在样品晶片组的晶片上执行IM WAT以获得IM WAT数据。该方法还包括从针对样品晶片组获得的IM WAT数据估计经处理的晶片批次中的所有晶片的最终WAT数据，并将估计的最终WAT数据提供给用于控制过程的WAT APC过程。

20. 发明授权

US08224475B2 Method and apparatus for advanced process control 有权
标题翻译：高级过程控制的方法和装置
公开(公告)号：US08224475B2
公开(公告)日：2012-07-17
申请号：US12404120
申请日：2009-03-13
申请人： Po-Feng Tsai , Andy Tsen
发明人： Po-Feng Tsai , Andy Tsen
IPC分类号： G05B13/02
CPC分类号： G05B13/024 , H01L22/12 , H01L22/20
摘要： A method includes: initializing first and second variables; operating equipment based on the variables; measuring first and second parameters; determining a new value for the first variable based on the first parameter, and calculating a new value for the second variable based on the second parameter and the current value of the second variable; and repeating the operating, measuring, determining and calculating. According to a different aspect, an apparatus includes a computer-readable medium storing a computer program. When executed, the program causes: initializing of first and second variables; operating equipment based on the variables; receiving measured first and second parameters; determining a new value for the first variable based on the first parameter, and calculating a new value for the second variable based on the second parameter and the current value of the second variable; and repeating the operating, measuring, determining and calculating.
摘要翻译：一种方法包括：初始化第一和第二变量; 基于变量的操作设备; 测量第一和第二参数; 基于第一参数确定第一变量的新值，并且基于第二参数和第二变量的当前值来计算第二变量的新值; 并重复操作，测量，确定和计算。根据不同方面，一种装置包括存储计算机程序的计算机可读介质。程序执行时，会导致：初始化第一个和第二个变量; 基于变量的操作设备; 接收测量的第一和第二参数; 基于第一参数确定第一变量的新值，并且基于第二参数和第二变量的当前值来计算第二变量的新值; 并重复操作，测量，确定和计算。

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