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11. 发明授权

US07166525B2 High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer 有权
标题翻译：栅极绝缘体层的高温氢退火以增加导电栅极结构和栅极绝缘体层之间的蚀刻选择性
公开(公告)号：US07166525B2
公开(公告)日：2007-01-23
申请号：US10758317
申请日：2004-01-15
申请人： Vincent S. Chang , Chia-Lin Chen , Chi-Chun Chen , Tze-Liang Lee , Shih-Chang Chen , Chien-Hao Chen
发明人： Vincent S. Chang , Chia-Lin Chen , Chi-Chun Chen , Tze-Liang Lee , Shih-Chang Chen , Chien-Hao Chen
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： H01L29/518 , H01L21/28123 , H01L21/28185 , H01L21/28202 , H01L21/3105 , H01L21/3144 , H01L21/32137 , H01L29/6659
摘要： A method of defining a conductive gate structure for a MOSFET device wherein the etch rate selectivity of the conductive gate material to an underlying insulator layer is optimized, has been developed. After formation of a nitrided silicon dioxide layer, to be used as for the MOSFET gate insulator layer, a high temperature hydrogen anneal procedure is performed. The high temperature anneal procedure replaces nitrogen components in a top portion of the nitrided silicon dioxide gate insulator layer with hydrogen components. The etch rate of the hydrogen annealed layer in specific dry etch ambients is now decreased when compared to the non-hydrogen annealed nitrided silicon dioxide counterpart. Thus the etch rate selectivity of conductive gate material to underlying gate insulator material is increased when employing the slower etching hydrogen annealed nitrided silicon dioxide layer.
摘要翻译：已经开发了限定用于MOSFET器件的导电栅极结构的方法，其中导电栅极材料对下面的绝缘体层的蚀刻速率选择性被优化。在形成用于MOSFET栅极绝缘体层的氮化二氧化硅层之后，进行高温氢退火处理。高温退火程序用氢组分替代氮化二氧化硅栅极绝缘体层的顶部中的氮组分。当与非氢退火氮化二氧化硅对应物相比时，特定干蚀刻环境中的氢退火层的蚀刻速率现在降低。因此，当采用较慢的蚀刻氢退火氮化二氧化硅层时，导电栅极材料对底层栅极绝缘体材料的蚀刻速率选择性增加。

12. 发明申请

US20060223255A1 Method for selectively stressing MOSFETs to improve charge carrier mobility 审中-公开
标题翻译：选择性地强迫MOSFET以改善载流子迁移率的方法
公开(公告)号：US20060223255A1
公开(公告)日：2006-10-05
申请号：US11370397
申请日：2006-03-07
申请人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
摘要翻译：一种具有改善的电荷迁移率的应变通道MOSFET器件及其形成方法，所述方法包括在衬底上提供具有半导体导电类型的第一半导体导电类型的第一栅极和第二栅极; 在所述第一栅极上形成具有第一类型应力的第一应变层; 并且在所述第二浇口上形成具有第二类型应力的第二应变层。

13. 发明申请

US20060183292A1 STI liner modification method 有权
标题翻译： STI衬垫修改方法
公开(公告)号：US20060183292A1
公开(公告)日：2006-08-17
申请号：US11059728
申请日：2005-02-17
申请人： Chien-Hao Chen , Vincent Chang , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Vincent Chang , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/76
CPC分类号： H01L21/76235
摘要： A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed on the trench surfaces by oxidation techniques. The method further includes pre-treatment of the trench surfaces using a nitrogen-containing gas prior to formation of the liner oxide layer, post-formation nitridation of the liner oxide layer, or both pre-treatment of the trench surfaces and post-formation nitridation of the liner oxide layer. The liner modification method of the present invention optimizes the inverse narrow width effect (INWE) and gate oxide integrity (GOI) of STI structures and prevents diffusion of dopant into the liner oxide layer during subsequent processing.
摘要翻译：公开了一种用于STI沟槽中的衬垫氧化物层的新的改进的衬垫修改方法。根据该方法，在衬底中蚀刻STI沟槽，并且通过氧化技术在沟槽表面上形成衬垫氧化物层。该方法还包括在形成衬垫氧化物层之前使用含氮气体预处理沟槽表面，衬里氧化物层的形成后氮化或沟槽表面的预处理和后形成氮化的衬里氧化物层。本发明的衬垫修改方法优化STI结构的反窄窄度效应（INWE）和栅极氧化物完整性（GOI），并防止掺杂剂在随后的处理期间扩散到衬里氧化物层中。

14. 发明申请

US20050106863A1 Semiconductor wafer manufacturing methods employing cleaning delay period 有权
公开(公告)号：US20050106863A1
公开(公告)日：2005-05-19
申请号：US10712460
申请日：2003-11-13
申请人： Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
发明人： Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/00 , H01L21/02 , H01L21/44
CPC分类号： H01L21/02052 , Y10S438/906
摘要： A method of manufacturing a semiconductor wafer including cleaning a surface of the wafer during a first time period and forming a layer over the surface during a second time period. The first time period includes a cleaning delay period prior to a cleaning portion of the first time period, the cleaning delay period configured such that an end time of the first time period substantially coincides with a start time of the second time period.

15. 发明申请

US20080157266A1 STI LINER MODIFICATION METHOD 审中-公开
标题翻译： STI LINER修改方法
公开(公告)号：US20080157266A1
公开(公告)日：2008-07-03
申请号：US12049452
申请日：2008-03-17
申请人： Chien-Hao Chen , Vincent S. Chang , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Vincent S. Chang , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/762
CPC分类号： H01L21/76235
摘要： A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed on the trench surfaces by oxidation techniques. The method further includes pre-treatment of the trench surfaces using a nitrogen-containing gas prior to formation of the liner oxide layer, post-formation nitridation of the liner oxide layer, or both pre-treatment of the trench surfaces and post-formation nitridation of the liner oxide layer. The liner modification method of the present invention optimizes the inverse narrow width effect (INWE) and gate oxide integrity (GOI) of STI structures and prevents diffusion of dopant into the liner oxide layer during subsequent processing.
摘要翻译：公开了一种用于STI沟槽中的衬垫氧化物层的新的改进的衬垫修改方法。根据该方法，在衬底中蚀刻STI沟槽，并且通过氧化技术在沟槽表面上形成衬垫氧化物层。该方法还包括在形成衬垫氧化物层之前使用含氮气体预处理沟槽表面，衬里氧化物层的形成后氮化或沟槽表面的预处理和后形成氮化的衬里氧化物层。本发明的衬垫修改方法优化STI结构的反窄窄度效应（INWE）和栅极氧化物完整性（GOI），并防止掺杂剂在随后的处理期间扩散到衬里氧化物层中。

16. 发明申请

US20060183279A1 METHOD FOR SELECTIVELY STRESSING MOSFETS TO IMPROVE CHARGE CARRIER MOBILITY 审中-公开
标题翻译：选择性地压力MOSFET以提高电荷载流子迁移率的方法
公开(公告)号：US20060183279A1
公开(公告)日：2006-08-17
申请号：US11279016
申请日：2006-04-07
申请人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
摘要翻译：一种具有改善的电荷迁移率的应变通道MOSFET器件及其形成方法，所述方法包括在衬底上提供具有半导体导电类型的第一半导体导电类型的第一栅极和第二栅极; 在所述第一栅极上形成具有第一类型应力的第一应变层; 并且在所述第二浇口上形成具有第二类型应力的第二应变层。

17. 发明授权

US07052946B2 Method for selectively stressing MOSFETs to improve charge carrier mobility 有权
公开(公告)号：US07052946B2
公开(公告)日：2006-05-30
申请号：US10798960
申请日：2004-03-10
申请人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.

18. 发明申请

US20060014396A1 Method for forming a resist protect layer 有权
标题翻译：形成抗蚀剂保护层的方法
公开(公告)号：US20060014396A1
公开(公告)日：2006-01-19
申请号：US10892014
申请日：2004-07-14
申请人： Chien-Hao Chen , Ju-Wang Hsu , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Ju-Wang Hsu , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/31111 , H01L21/823481 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： A method for forming a resist protect layer on a semiconductor substrate includes the following steps. An isolation structure is formed on the semiconductor substrate. An original nitride layer having a substantial etch selectivity to the isolation structure is formed over the semiconductor substrate. A photoresist mask is formed for partially covering the original nitride layer. A wet etching is performed to remove the original nitride layer uncovered by the photoresist mask in such a way without causing substantial damage to the isolation structure. As such, the original nitride layer covered by the photoresist mask constitutes the resist protect layer.
摘要翻译：在半导体衬底上形成抗蚀剂保护层的方法包括以下步骤。在半导体衬底上形成隔离结构。在半导体衬底上形成对隔离结构具有实质蚀刻选择性的原始氮化物层。形成光致抗蚀剂掩模以部分覆盖原始氮化物层。执行湿蚀刻以以这样的方式去除由光致抗蚀剂掩模未覆盖的原始氮化物层，而不会对隔离结构造成实质损坏。因此，由光致抗蚀剂掩模覆盖的原始氮化物层构成抗蚀剂保护层。

19. 发明申请

US20050214998A1 Local stress control for CMOS performance enhancement 审中-公开
标题翻译： CMOS性能提升的局部应力控制
公开(公告)号：US20050214998A1
公开(公告)日：2005-09-29
申请号：US10810795
申请日：2004-03-26
申请人： Chien-Hao Chen , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Chia-Lin Chen , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/44 , H01L21/768 , H01L21/8238
CPC分类号： H01L21/76829 , H01L21/823807 , H01L21/823828 , H01L29/7843
摘要： A semiconductor device and method for forming the same for improving charge mobility in NMOS and PMOS devices simultaneously, the method including forming a first dielectric layer including a stress type selected from the group consisting of tensile stress and compressive stress over the respective PMOS and NMOS device regions; removing a portion of the first dielectric layer overlying one of the PMOS and NMOS device regions; forming a second dielectric layer including a stress type opposite from the first dielectric layer stress type over the respective PMOS and NMOS device regions; and, removing a portion of the second dielectric layer overlying one of the PMOS and NMOS device regions having an underlying first dielectric layer to form a compressive stress dielectric layer over the PMOS device region and a tensile stress dielectric layer over the NMOS device region.
摘要翻译：一种半导体器件及其制造方法，用于同时改善NMOS和PMOS器件的电荷迁移率，该方法包括形成第一介电层，该第一介电层包括在相应的PMOS和NMOS器件上包括拉应力和压应力的应力类型区域; 去除覆盖所述PMOS和NMOS器件区域中的一个的所述第一电介质层的一部分; 在相应的PMOS和NMOS器件区域上形成包括与第一介电层应力型相反的应力类型的第二介质层; 以及去除覆盖具有下面的第一介电层的PMOS器件区域和NMOS器件区域之一的第二介电层的一部分，以在PMOS器件区域上形成压应力介电层，并在NMOS器件区域上形成拉伸应力介电层。

20. 发明申请

US20050199958A1 Method for selectively stressing MOSFETs to improve charge carrier mobility 有权
标题翻译：选择性地强迫MOSFET以改善载流子迁移率的方法
公开(公告)号：US20050199958A1
公开(公告)日：2005-09-15
申请号：US10798960
申请日：2004-03-10
申请人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Chia-Lin Chen , Ju-Wang Hsu , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
摘要翻译：一种具有改善的电荷迁移率的应变沟道MOSFET器件及其形成方法，所述方法包括在衬底上提供具有半导体导电类型的第一半导体导电类型的第一栅极和第二栅极; 在所述第一栅极上形成具有第一类型应力的第一应变层; 并且在所述第二浇口上形成具有第二类型应力的第二应变层。

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