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11. 发明申请

US20060132989A1 Novel hard bias design for sensor applications 有权
公开(公告)号：US20060132989A1
公开(公告)日：2006-06-22
申请号：US11016507
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

12. 发明授权

US07446987B2 Composite hard bias design with a soft magnetic underlayer for sensor applications 有权
标题翻译：复合硬偏置设计与传感器应用的软磁底层
公开(公告)号：US07446987B2
公开(公告)日：2008-11-04
申请号：US11016507
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total Hc, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成，或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H c，M L t和S的最大值的厚度价值观。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。}

13. 发明授权

US07515388B2 Composite hard bias design with a soft magnetic underlayer for sensor applications 有权
标题翻译：复合硬偏置设计与传感器应用的软磁底层
公开(公告)号：US07515388B2
公开(公告)日：2009-04-07
申请号：US11016506
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏置结构由诸如NiFe的软磁性底层和由Co78.6Cr5.2Pt16.2或Co65Cr15Pt20构成的硬偏置层组成，其刚性交换耦合到确保具有最小分散度的良好对齐的纵向偏置方向。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总HC，Mrt和S值最优化的厚度。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。

14. 发明申请

US20100172053A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20100172053A1
公开(公告)日：2010-07-08
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/187 , B05D1/36
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

15. 发明申请

US20090314632A1 FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
标题翻译： FCC类三层AP2结构，用于CPP GMR EM改进
公开(公告)号：US20090314632A1
公开(公告)日：2009-12-24
申请号：US12583742
申请日：2009-08-25
申请人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
IPC分类号： C23C14/34 , B05D5/12
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译：公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％为75〜100原子％。优选地，z为90以提供使电迁移最小化的面心立方结构。任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

16. 发明授权

US07583481B2 FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
标题翻译： FCC类三层AP2结构，用于CPP GMR EM改进
公开(公告)号：US07583481B2
公开(公告)日：2009-09-01
申请号：US11234719
申请日：2005-09-23
申请人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译：公开了具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％，z为75至100 原子％。优选地，z为90以提供使电迁移最小化的面心立方结构。任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。与使用常规AP2 Co50Fe5或Co75Fe25单层的自旋阀相比，EM性能显着提高。自旋阀的MR比也增加，RA保持在可接受的水平。耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

17. 发明授权

US08012316B2 FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
标题翻译： FCC类三层AP2结构，用于CPP GMR EM改进
公开(公告)号：US08012316B2
公开(公告)日：2011-09-06
申请号：US12583742
申请日：2009-08-25
申请人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
IPC分类号： C23C14/14
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译：公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％为75〜100原子％。优选地，z为90以提供使电迁移最小化的面心立方结构。任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

18. 发明授权

US07688555B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US07688555B2
公开(公告)日：2010-03-30
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

19. 发明授权

US07358100B2 Bottom conductor for integrated MRAM 有权
标题翻译：集成MRAM的底部导体
公开(公告)号：US07358100B2
公开(公告)日：2008-04-15
申请号：US11891923
申请日：2007-08-14
申请人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
发明人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.
摘要翻译：描述了一种制造MTJ器件及其与CMOS集成电路的连接的方法。该设备由三层构建。底层用作中心层的种子层，其为α钽，而第三最顶层选择为其平滑度，其与层间电介质材料的相容性以及其保护下面的钽的能力。

20. 发明授权

US07336452B2 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US07336452B2
公开(公告)日：2008-02-26
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

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