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11. 发明授权

US06730452B2 Lithographic photoresist composition and process for its use 有权
标题翻译：平版光刻胶组合物及其使用方法
公开(公告)号：US06730452B2
公开(公告)日：2004-05-04
申请号：US09771261
申请日：2001-01-26
申请人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/108
摘要： A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。在优选的实施方案中，组合物对深紫外辐射即波长小于250nm（包括157nm，193nm和248nm辐射）的辐射基本上是透明的，并具有改进的灵敏度和分辨率。组合物包含氟化乙烯基聚合物，特别是氟化甲基丙烯酸酯，氟化甲基丙烯腈或氟化甲基丙烯酸，以及光酸产生剂。聚合物可以是均聚物或共聚物。还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。

12. 发明授权

US5866306A Process for use of photosensitive polysilanes as photoresist 失效
标题翻译：使用感光性聚硅烷作为光致抗蚀剂的方法
公开(公告)号：US5866306A
公开(公告)日：1999-02-02
申请号：US78808
申请日：1993-06-17
申请人： Robert Dennis Miller , Gregory Michael Wallraff , Mark Edwin Baier
发明人： Robert Dennis Miller , Gregory Michael Wallraff , Mark Edwin Baier
IPC分类号： G03F7/039 , C08G77/60 , G03F7/075 , H01L21/027
CPC分类号： C08G77/60 , G03F7/0754
摘要： The present invention relates to the use of certain polyalkylphenyl silanes in photoresists to generate positive tone resist images. The polyalkylphenyl silanes have the formula: ##STR1## where R is C2-C12 alkyl and n is about 150 to 7000.
摘要翻译：本发明涉及在光致抗蚀剂中使用某些聚烷基苯基硅烷来生成正性抗蚀剂图像。聚烷基苯基硅烷具有下式：其中R为C 2 -C 12烷基，n为约150至7000。

13. 发明授权

US08945808B2 Self-topcoating resist for photolithography 有权
标题翻译：用于光刻的自表面涂层抗蚀剂
公开(公告)号：US08945808B2
公开(公告)日：2015-02-03
申请号：US11380731
申请日：2006-04-28
申请人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
发明人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
IPC分类号： G03F7/039 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译：公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。

14. 发明授权

US08821978B2 Methods of directed self-assembly and layered structures formed therefrom 有权
标题翻译：定向自组装方法和从其形成的分层结构
公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： B32B3/10 , G03F7/16 , G03F7/38 , G03F7/40 , G03F7/30
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译：形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。在去除有机浇注溶剂时，材料自组装，从而形成层状结构。

15. 发明授权

US08703386B2 Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications 有权
标题翻译：金属过氧化合物与电子束，深UV和极紫外光致抗蚀剂应用的有机共配体
公开(公告)号：US08703386B2
公开(公告)日：2014-04-22
申请号：US13405587
申请日：2012-02-27
申请人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
发明人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
IPC分类号： G03F7/00 , G03F7/004 , G03F7/029 , C07C49/92 , C07C7/00
CPC分类号： G03F7/0042
摘要： Compositions are disclosed having the formula (3): [C′]k[Ta(O2)x(L′)y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L′)y has a charge of 0 to −3, C′ is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L′ is an oxidatively stable organic ligand having a charge of 0 to −4, and L′ comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.
摘要翻译：公开了具有式（3）的组合物：[C'] k [Ta（O 2）x（L'）y]（3）其中x是1至4的整数，y是1至4的整数， Ta（O 2）x（L'）y具有0至-3的电荷，C'是具有+1至+3的电荷的抗衡离子，k是0至3的整数，L'是氧化稳定的有机物配体的电荷为0至-4，L'包括选自羧酸盐，醇盐，胺，氧化胺，膦，氧化膦，胂氧化物及其组合的给电子官能团。该组合物具有作为高分辨率光致抗蚀剂的作用。

16. 发明授权

US07651872B2 Discrete nano-textured structures in biomolecular arrays, and method of use 失效
标题翻译：生物分子阵列中的离散纳米纹理结构及其使用方法
公开(公告)号：US07651872B2
公开(公告)日：2010-01-26
申请号：US12028767
申请日：2008-02-08
申请人： Mark Whitney Hart , Ho-Cheol Kim , Robert Dennis Miller , Gregory Michael Wallraff
发明人： Mark Whitney Hart , Ho-Cheol Kim , Robert Dennis Miller , Gregory Michael Wallraff
IPC分类号： H01L21/00
CPC分类号： B01L3/5085 , B01J2219/00619 , B01J2219/00621 , B01J2219/00644 , B01L2200/12 , B01L2300/0609 , B01L2300/069 , B01L2300/0829 , B01L2300/0851 , B01L2300/165 , B01L2300/168 , C40B60/08
摘要： A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are preferably optically isolated from each other and may be shaped to enhance detection of optical radiation emanating from the porous substance, e.g., as a result of irradiation of the regions with ultraviolet light. The discrete regions may be configured as microscopic wells within the substrate, or they may reside on top of the substrate in the form of microscopic mesas.
摘要翻译：生物分子阵列包括基底，其上分布有由含致孔剂的有机硅酸盐材料形成的多孔物质的离散区域的阵列。多孔物质被设计用于结合可用于生物技术应用的化学靶，例如基因表达，蛋白质，抗体和抗原实验。这些区域优选地彼此光学隔离，并且可以被成形为增强从多孔物质发出的光辐射的检测，例如，作为由紫外线照射该区域的结果。离散区域可以被配置为衬底内的微观阱，或者它们可以以微观台面的形式驻留在衬底的顶部上。

17. 发明申请

US20080166669A1 Photoresists for Visible Light Imaging 有权
标题翻译：可见光成像光刻胶
公开(公告)号：US20080166669A1
公开(公告)日：2008-07-10
申请号：US12050589
申请日：2008-03-18
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/30
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

18. 发明授权

US06444408B1 High silicon content monomers and polymers suitable for 193 nm bilayer resists 有权
标题翻译：适用于193纳米双层抗蚀剂的高硅含量单体和聚合物
公开(公告)号：US06444408B1
公开(公告)日：2002-09-03
申请号：US09514212
申请日：2000-02-28
申请人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
IPC分类号： G03F7027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
摘要翻译：在193nm下透明的含硅基团的可聚合单体; 和烯键式不饱和基团。来自这些单体的聚合物可以用于用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。双层抗蚀剂可用于集成电路的制造。

19. 发明授权

US06165678A Lithographic photoresist composition and process for its use in the manufacture of integrated circuits 失效
标题翻译：平版光刻胶组合物及其在制造集成电路中的应用
公开(公告)号：US06165678A
公开(公告)日：2000-12-26
申请号：US111558
申请日：1998-07-08
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Thomas I. Wallow , Gregory Michael Wallraff
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Thomas I. Wallow , Gregory Michael Wallraff
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供了一种具有改进的灵敏度和分辨率的新型辐射敏感平版印刷光刻胶组合物。该组合物包含光敏酸产生剂和丙烯酸酯或甲基丙烯酸酯共聚物。共聚物含有具有极性侧基的第一单体单元和含有光可酸裂解酯基的第二单体单元。极性侧基优选包含含有极性部分R *的C6-C12脂环族取代基，其中脂环取代基通过连接体部分结合至聚合物主链。也可以包括其它单体单元。一种使用该组合物在基板上生成抗蚀剂图像，即集成电路等的制造方法。

20. 发明授权

US5658734A Process for synthesizing chemical compounds 失效
标题翻译：合成化合物的方法
公开(公告)号：US5658734A
公开(公告)日：1997-08-19
申请号：US544376
申请日：1995-10-17
申请人： Phillip Joe Brock , William Dinan Hinsberg , Jeffrey William Labadie , Glenn McGall , Gregory Michael Wallraff
发明人： Phillip Joe Brock , William Dinan Hinsberg , Jeffrey William Labadie , Glenn McGall , Gregory Michael Wallraff
IPC分类号： B01J19/00 , C07H21/00 , C40B40/06 , C40B40/10 , C40B60/14 , C12Q1/68 , G01N33/543
CPC分类号： B82Y30/00 , B01J19/0046 , C07H21/00 , B01J2219/00432 , B01J2219/00527 , B01J2219/00585 , B01J2219/0059 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00626 , B01J2219/00637 , B01J2219/00659 , B01J2219/00711 , B01J2219/00722 , B01J2219/00725 , C40B40/06 , C40B40/10 , C40B60/14 , Y10S435/969 , Y10S436/809 , Y10S530/81
摘要： The present invention relates to a process for synthesizing on a single substrate a plurality of chemical compounds having diverse structures. The process involves the use of a bilayer photoresist to build up selected regions of the array in a step wise fashion.
摘要翻译：本发明涉及在单个基板上合成多种具有不同结构的化合物的方法。该方法涉及使用双层光致抗蚀剂以逐步的方式建立阵列的选定区域。

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