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11. 发明申请

US20170275759A1 SUBSTRATE SUPPORT ASSEMBLY WITH NON-UNIFORM GAS FLOW CLEARANCE 审中-公开
公开(公告)号：US20170275759A1
公开(公告)日：2017-09-28
申请号：US15082015
申请日：2016-03-28
申请人： Applied Materials, Inc.
发明人： Shinichi KURITA , Robin L. TINER
IPC分类号： C23C16/455 , C23C16/458 , C23C16/50 , H01J37/32
CPC分类号： C23C16/45591 , C23C16/45508 , C23C16/4583 , C23C16/4585 , C23C16/4587 , C23C16/50 , H01J37/32357 , H01J37/32715 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/335 , H01L21/68735 , H01L21/68785
摘要： The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.

12. 发明申请

US20170096738A1 DIFFUSER TEMPERATURE CONTROL 审中-公开
公开(公告)号：US20170096738A1
公开(公告)日：2017-04-06
申请号：US15277345
申请日：2016-09-27
申请人： Applied Materials, Inc.
发明人： Shinichi KURITA , Robin L. TINER
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/4557 , C23C16/5096 , H01J37/32449 , H01J37/32522 , H01J37/32724
摘要： A PECVD chamber is disclosed with a temperature controlled gas distribution showerhead. The gas distribution showerhead is temperature controlled heated by circulating a g fluid through conduit formed within or coupled to the gas distribution showerhead. The PECVD chamber comprises a gas distribution showerhead, a backing plate coupled to the gas distribution showerhead, the backing plate having a bottom surface facing and substantially parallel with and spaced from an upper surface of the gas distribution showerhead; and a temperature controlling device coupled to the gas distribution showerhead and disposed between the backing plate and the gas distribution showerhead.

13. 发明申请

US20170092469A1 GROOVED BACKING PLATE FOR STANDING WAVE COMPENSATION 审中-公开
公开(公告)号：US20170092469A1
公开(公告)日：2017-03-30
申请号：US15274608
申请日：2016-09-23
申请人： Applied Materials, Inc.
发明人： Shinichi KURITA , Robin L. TINER
IPC分类号： H01J37/32 , C23C16/458 , C23C16/505
CPC分类号： H01J37/32431 , C23C16/458 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/321 , H01J37/32174 , H01J37/32183 , H01J37/32568 , H01J2237/3321
摘要： Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.

14. 发明申请

US20170081763A1 SHOWERHEAD SUPPORT STRUCTURES 有权
公开(公告)号：US20170081763A1
公开(公告)日：2017-03-23
申请号：US15249442
申请日：2016-08-28
申请人： Applied Materials, Inc.
发明人： Robin L. TINER , Allen K. LAU
IPC分类号： C23C16/455 , C23C16/505 , B05B15/06
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244 , H01J37/32807
摘要： Embodiments of the present disclosure generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber includes a rectangular body having four sides, a first major surface and a second major surface opposite the first major surface, and a plurality of gas passages formed through the body in a longitudinal direction between the first and second major surfaces, a center support member coupled to the body in a center region thereof, and a mid-support member coupled to the body between the center region and the side.

15. 发明申请

US20150211120A1 CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY 审中-公开
标题翻译：用于改善轮廓均匀性的角撑板
公开(公告)号：US20150211120A1
公开(公告)日：2015-07-30
申请号：US14610489
申请日：2015-01-30
申请人： Applied Materials, Inc.
发明人： Lai ZHAO , Gaku FURUTA , Qunhua WANG , Robin L. TINER , Beom Soo PARK , Soo Young CHOI , Sanjay D. YADAV
IPC分类号： C23C16/455 , H01J37/32
摘要： The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.
摘要翻译：本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板的拐角处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。

16. 发明申请

US20150114948A1 SUBSTRATE SUPPORT WITH QUADRANTS 有权
标题翻译：基础支持与QUADRANTS
公开(公告)号：US20150114948A1
公开(公告)日：2015-04-30
申请号：US14505355
申请日：2014-10-02
申请人： Applied Materials, Inc.
发明人： Robin L. TINER , Soo Young CHOI , Beom Soo PARK , Shinichi KURITA , Bora OH , Gaku FURUTA
IPC分类号： C23C16/458 , H05B3/22 , H01L21/67
CPC分类号： H05B3/22 , C23C16/458 , C23C16/4586 , C23C16/50 , H01L21/67103 , H05B2203/003
摘要： The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.
摘要翻译：本发明一般涉及一种用于处理室中的基片支架。衬底支撑分为象限，每个象限能够独立于其他象限进行加热。独立加热允许衬底支撑件向同时设置在衬底支撑件上的不同衬底或公共衬底的不同区域提供不同的加热。因此，可以调整基板加热以确保发生基板或基板的期望的处理。

17. 发明申请

US20140174361A1 HEATED BACKING PLATE 审中-公开
标题翻译：加热背板
公开(公告)号：US20140174361A1
公开(公告)日：2014-06-26
申请号：US14061831
申请日：2013-10-24
申请人： Applied Materials, Inc.
发明人： Jrjyan Jerry CHEN , Soo Young CHOI , Young Jin CHOI , Yi CUI , Beom Soo PARK , Robin L. TINER
IPC分类号： C23C16/44
CPC分类号： C23C16/4401 , C23C16/45565 , C23C16/4557
摘要： The present invention generally relates to a heated backing plate coupled to a gas distribution showerhead in a PECVD chamber. The backing plate is heated by circulating a heating fluid either through channels formed within the backing plate or a tube coupled to the backing plate. A heated backing plate heats up the gas distribution showerhead, which improves the cleaning rate of the PECVD chamber that performs low temperature processes.
摘要翻译：本发明一般涉及一种联接到PECVD室中的气体分配喷头的加热背板。通过循环加热流体来加热背板，通过形成在背板内的通道或耦合到背板的管。加热的背板加热气体分配喷头，这提高了执行低温过程的PECVD室的清洁率。

18. 发明申请

US20200165726A1 GAS DIFFUSER MOUNTING PLATE FOR REDUCED PARTICLE GENERATION 审中-公开
公开(公告)号：US20200165726A1
公开(公告)日：2020-05-28
申请号：US16201755
申请日：2018-11-27
申请人： Applied Materials, Inc.
发明人： Allen K. LAU , Hsiang AN , Lai ZHAO , Jianhua ZHOU , Robin L. TINER
IPC分类号： C23C16/455 , C23C16/50
摘要： Embodiments of the present disclosure generally provide apparatus and methods for a gas diffuser assembly for a vacuum chamber, the gas diffuser assembly comprising a mounting plate, the mounting plate comprising a hub, a plurality of curved spokes extending from the hub in a radial direction, a gusset portion coupled between the hub and each of the curved spokes, each of the gusset portions having a convex curve disposed in an axial direction, and one or more mounting holes coupled to the curved spokes.

19. 发明申请

US20200071833A1 GAS DIFFUSER SUPPORT STRUCTURE FOR REDUCED PARTICLE GENERATION 审中-公开
公开(公告)号：US20200071833A1
公开(公告)日：2020-03-05
申请号：US16119505
申请日：2018-08-31
申请人： Applied Materials, Inc.
发明人： Allen K. LAU , Robin L. TINER , Lai ZHAO , Soo Young Choi
IPC分类号： C23C16/455
摘要： Embodiments of the present disclosure generally provide apparatus and methods for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore formed therethrough, an integrated cross structure formed in the central bore, and a gas deflector coupled to the cross structure by a single fastener.

20. 发明申请

US20200043706A1 CHAMBER LINER 审中-公开
公开(公告)号：US20200043706A1
公开(公告)日：2020-02-06
申请号：US16052304
申请日：2018-08-01
申请人： Applied Materials, Inc.
发明人： Jianheng LI , Lai ZHAO , Robin L. TINER , Allen K. LAU , Gaku FURUTA , Soo Young CHOI
IPC分类号： H01J37/32 , C23C16/505
摘要： Embodiments described herein generally relate to apparatus and methods for processing a substrate utilizing a high radio frequency (RF) power. The high RF power enables deposition of films on the substrate with more desirable properties. A first plurality of insulating members is disposed on a plurality of brackets and extends laterally inward from a chamber body. A second plurality of insulating members is disposed on the chamber body and extends from the first plurality of insulating members to a support surface of the chamber body. The insulating members reduce the occurrence of arcing between the plasma and the chamber body.

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