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11. 发明授权

US08801896B2 Method and apparatus for stable plasma processing 有权
标题翻译：稳定等离子体处理的方法和装置
公开(公告)号：US08801896B2
公开(公告)日：2014-08-12
申请号：US13734532
申请日：2013-01-04
申请人： Applied Materials, Inc.
发明人： Valentin N. Todorow , John P. Holland , Michael D. Willwerth
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23F4/00 , C23F1/08 , H01J37/321 , H01J37/32633 , H01L21/67069
摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.
摘要翻译：本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。将基板放置在基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

12. 发明公开

US20230343568A2 CAPACITIVE SENSING DATA INTEGRATION FOR PLASMA CHAMBER CONDITION MONITORING 审中-公开
公开(公告)号：US20230343568A2
公开(公告)日：2023-10-26
申请号：US18071444
申请日：2022-11-29
申请人： Applied Materials, Inc.
发明人： Yaoling Pan , Patrick John Tae , Michael D. Willwerth , Leonard Tedeschi , Kiyki-Shiy N. Shang , Mikhail V. Taraboukhine , Charles R. Hardy , Sivasankar Nagarajan
IPC分类号： H01J37/32 , G01N27/22
CPC分类号： H01J37/32935 , H01J37/32807 , H01J37/32926 , G01N27/228 , H01J37/32853 , H01J2237/24592 , H01J2237/24495 , H01J2237/24564
摘要： Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

13. 发明授权

US11551905B2 Resonant process monitor 有权
公开(公告)号：US11551905B2
公开(公告)日：2023-01-10
申请号：US15925739
申请日：2018-03-19
申请人： APPLIED MATERIALS, INC.
发明人： Yaoling Pan , Vijaykumar Krithivasan , Shimin Mao , Kelvin Chan , Michael D. Willwerth , Anantha Subramani , Ashish Goel , Chih-shun Lu , Philip Allan Kraus , Patrick John Tae , Leonard Tedeschi
IPC分类号： H01J37/244 , H01L21/67 , H01L41/047 , H01L41/053 , H01L41/29 , H01L41/04 , H01J37/32 , H01L41/31
摘要： Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

14. 发明授权

US11448977B1 Gas distribution plate with UV blocker at the center 有权
公开(公告)号：US11448977B1
公开(公告)日：2022-09-20
申请号：US17484605
申请日：2021-09-24
申请人： Applied Materials, Inc.
发明人： Kartik Ramaswamy , Michael D. Willwerth , Yang Yang
IPC分类号： G03F7/20 , G03F7/42
摘要： Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

15. 发明授权

US11264252B2 Chamber lid with integrated heater 有权
公开(公告)号：US11264252B2
公开(公告)日：2022-03-01
申请号：US16561907
申请日：2019-09-05
申请人： Applied Materials, Inc.
发明人： Michael D. Willwerth , Jeffrey Ludwig , Benjamin Schwarz , Roberto Cesar Cotlear
IPC分类号： H01L21/67 , H01J37/32
摘要： Implementations described herein provide a chamber lid assembly. In one embodiment, a chamber lid assembly includes a heater embedded in a dielectric body forming a boundary of a processing chamber, wherein the heater has one or more heating zones that are independently controlled.

16. 发明授权

US11094511B2 Processing chamber with substrate edge enhancement processing 有权
公开(公告)号：US11094511B2
公开(公告)日：2021-08-17
申请号：US16189440
申请日：2018-11-13
申请人： Applied Materials, Inc.
发明人： Changhun Lee , Michael D. Willwerth , Valentin N. Todorow , Hean Cheal Lee , Hun Sang Kim
IPC分类号： H01J37/32 , G03F7/42
摘要： Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

17. 发明申请

US20200013661A1 ELECTROSTATIC CHUCK WITH VARIABLE PIXELATED MAGNETIC FIELD 审中-公开
公开(公告)号：US20200013661A1
公开(公告)日：2020-01-09
申请号：US16576645
申请日：2019-09-19
申请人： Applied Materials, Inc.
发明人： Chih-Hsun Hsu , Tza-Jing Gung , Benjamin Schwarz , Shahid Rauf , Ankur Agarwal , Vijay D. Parkhe , Michael D. Willwerth , Zhiqiang Guo
IPC分类号： H01L21/683
摘要： Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.

18. 发明授权

US09948214B2 High temperature electrostatic chuck with real-time heat zone regulating capability 有权
公开(公告)号：US09948214B2
公开(公告)日：2018-04-17
申请号：US13793512
申请日：2013-03-11
申请人： Applied Materials, Inc.
发明人： Dmitry Lubomirsky , Jennifer Y. Sun , Sehn Thach , Xing Lin , Michael D. Willwerth , Konstantin Makhratchev
IPC分类号： H02N13/00 , H01L21/67 , H01L21/683 , H01L21/687 , B23B31/28
CPC分类号： H02N13/00 , B23B31/28 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/68792
摘要： Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

19. 发明授权

US08771423B2 Low sloped edge ring for plasma processing chamber 有权
标题翻译：用于等离子体处理室的低倾斜边缘环
公开(公告)号：US08771423B2
公开(公告)日：2014-07-08
申请号：US13649196
申请日：2012-10-11
申请人： Applied Materials, Inc.
发明人： Changhun Lee , Michael D. Willwerth , Hoan Nguyen
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , H01L21/68735 , H01L21/68757
摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.
摘要翻译：提供了一种用于等离子体处理室的盖环的实施例。在一个实施例中，用于等离子体处理室的盖环包括由含钇（Y）的材料制成的环形主体。主体包括具有内定位环和外定位环的底表面。内定位环比外定位环更远离主体。主体包括具有主壁和由基本上水平的平台分开的次级壁的内径壁。身体还包括顶表面，其具有在顶点处会聚内倾斜表面的外倾斜顶表面。内部倾斜表面与垂直于身体中心线的线形成小于约70度的角度。

20. 发明申请

US20130277339A1 PLASMA REACTOR ELECTROSTATIC CHUCK WITH COOLED PROCESS RING AND HEATED WORKPIECE SUPPORT SURFACE 有权
标题翻译：具有冷却工艺环和加热工件支撑表面的等离子体反应器静电卡
公开(公告)号：US20130277339A1
公开(公告)日：2013-10-24
申请号：US13632306
申请日：2012-10-01
申请人： APPLIED MATERIALS, INC.
发明人： Michael D. Willwerth , David Palagashvili , Michael G. Chafin , Ying-Sheng Lin
IPC分类号： B23K10/00
CPC分类号： H01J37/321 , H01J37/32642 , H01J37/32715 , H01J37/32724
摘要： Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.
摘要翻译：通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道。

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