专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08330174B2 LED having current spreading layer 有权
标题翻译： LED具有电流扩展层
公开(公告)号：US08330174B2
公开(公告)日：2012-12-11
申请号：US12745684
申请日：2008-11-13
申请人： Matthias Sabathil , Matthias Peter
发明人： Matthias Sabathil , Matthias Peter
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： An LED having a radiation-emitting active layer (7), an n-type contact (10), a p-type contact (9) and a current spreading layer (4) is specified. The current spreading layer (4) is arranged between the active layer (7) and the n-type contact (10). Furthermore, the current spreading layer (4) has a multiply repeating layer sequence having at least one n-doped layer (44), an undoped layer (42) and a layer composed of AlxGa1-xN (43), where 0≦x≦1. The layer composed of AlxGa1-xN (43) has a concentration gradient of the Al content.
摘要翻译：指定具有发射有源层（7），n型接触（10），p型接触（9）和电流扩展层（4）的LED。电流扩散层（4）布置在有源层（7）和n型触点（10）之间。此外，电流扩展层（4）具有多重重复层序列，其具有至少一个n掺杂层（44），未掺杂层（42）和由Al x Ga 1-x N（43）组成的层，其中0＆nlE; x＆ 1。由Al x Ga 1-x N（43）组成的层具有Al含量的浓度梯度。

12. 发明申请

US20110193057A1 LED Having Current Spreading Layer 有权
标题翻译： LED具有电流传播层
公开(公告)号：US20110193057A1
公开(公告)日：2011-08-11
申请号：US12745684
申请日：2008-11-13
申请人： Matthias Sabathil , Matthias Peter
发明人： Matthias Sabathil , Matthias Peter
IPC分类号： H01L33/06
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： An LED having a radiation-emitting active layer (7), an n-type contact (10), a p-type contact (9) and a current spreading layer (4) is specified. The current spreading layer (4) is arranged between the active layer (7) and the n-type contact (10). Furthermore, the current spreading layer (4) has a multiply repeating layer sequence having at least one n-doped layer (44), an undoped layer (42) and a layer composed of AlxGa1-xN (43), where 0
摘要翻译：指定具有发射有源层（7），n型接触（10），p型接触（9）和电流扩散层（4）的LED。电流扩散层（4）布置在有源层（7）和n型触点（10）之间。此外，电流扩展层（4）具有多重重复层序列，其具有至少一个n掺杂层（44），未掺杂层（42）和由Al x Ga 1-x N（43）组成的层，其中0

13. 发明授权

US07791081B2 Radiation-emitting semiconductor chip 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US07791081B2
公开(公告)日：2010-09-07
申请号：US11494984
申请日：2006-07-28
申请人： Matthias Peter , Uwe Strausse , Matthias Sabathil
发明人： Matthias Peter , Uwe Strausse , Matthias Sabathil
IPC分类号： H01L27/15
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32 , H01L2924/0002 , H01S5/2004 , H01S5/32341 , H01L2924/00
摘要： A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.
摘要翻译：一种辐射发射半导体芯片，包括具有n导电区域（4）和p导电区域（5）的半导体本体（3），该半导体本体具有包含材料体系的材料的空穴阻挡层 InyGa1-x-yAlxN。

14. 发明申请

US20120161103A1 ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
标题翻译：电动泵浦光电半导体芯片
公开(公告)号：US20120161103A1
公开(公告)日：2012-06-28
申请号：US13383495
申请日：2010-06-30
申请人： Matthias Peter , Tobias Meyer , Jürgen Off , Tetsuya Taki , Joachim Hertkorn , Matthias Sabathil , Ansgar Laubsch , Andreas Biebersdorf
发明人： Matthias Peter , Tobias Meyer , Jürgen Off , Tetsuya Taki , Joachim Hertkorn , Matthias Sabathil , Ansgar Laubsch , Andreas Biebersdorf
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.
摘要翻译：电泵浦光电子半导体芯片包括至少两个包含InGaN的辐射活性量子阱或由其组成。光电子半导体芯片包括至少两个包括AlGaN或其组成的覆盖层。每个覆盖层被精确地分配给辐射有源量子阱中的一个。覆盖层各自位于相关联的辐射活性量子阱的p侧上。辐射有源量子阱与相关覆盖层之间的距离为1.5nm以下。

15. 发明申请

US20100181583A1 RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US20100181583A1
公开(公告)日：2010-07-22
申请号：US11494984
申请日：2006-07-28
申请人： Matthias Peter , Uwe Strausse , Matthias Sabathil
发明人： Matthias Peter , Uwe Strausse , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32 , H01L2924/0002 , H01S5/2004 , H01S5/32341 , H01L2924/00
摘要： A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.
摘要翻译：一种辐射发射半导体芯片，包括具有n导电区域（4）和p导电区域（5）的半导体本体（3），该半导体本体具有包含材料体系的材料的空穴阻挡层 InyGa1-x-yAlxN。

16. 发明授权

US09012885B2 Light-emitting semiconductor chip 有权
标题翻译：发光半导体芯片
公开(公告)号：US09012885B2
公开(公告)日：2015-04-21
申请号：US13518809
申请日：2010-12-27
申请人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/06 , H01L33/14 , H01L33/04 , H01L33/06 , H01L33/22 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

17. 发明申请

US20120298964A1 Light-Emitting Semiconductor Chip 有权
标题翻译：发光半导体芯片
公开(公告)号：US20120298964A1
公开(公告)日：2012-11-29
申请号：US13518809
申请日：2010-12-27
申请人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/15 , H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

18. 发明授权

US08173991B2 Optoelectronic semiconductor chip having a multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光电半导体芯片
公开(公告)号：US08173991B2
公开(公告)日：2012-05-08
申请号：US12680463
申请日：2008-09-12
申请人： Peter Stauss , Matthias Peter , Alexander Walter
发明人： Peter Stauss , Matthias Peter , Alexander Walter
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/04 , H01L33/32 , H01L2924/0002 , H01S5/3086 , H01S5/34 , H01L2924/00
摘要： An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.
摘要翻译：规定了一种光电子半导体芯片，其具有包含多个量子阱结构的活动区域（20），所述有源区域包括多个连续量子阱层（210,220,230），所述有源区域包括用于产生电磁辐射的多量子阱结构。多量子阱结构包括至少一个第一量子阱层（210），其被n导电掺杂并且布置在邻接第一量子阱层的两个n导电掺杂阻挡层（250）之间。它包括未掺杂的第二量子阱层（220），并且被布置在邻接第二量子阱层的两个势垒层（250,260）之间，其中一个是n导电掺杂的，另一个是未掺杂的。另外，多量子阱结构包括至少一个未掺杂的第三量子阱层（230），其布置在与第三量子阱层相邻的两个未掺杂的势垒层（260）之间。

19. 发明授权

US08592840B2 Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN 有权
标题翻译：光电子半导体芯片和基于AlGaN的中间层的使用
公开(公告)号：US08592840B2
公开(公告)日：2013-11-26
申请号：US13519345
申请日：2010-12-20
申请人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
发明人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0
摘要翻译：光电半导体芯片包括基于GaN，InGaN，AlGaN和/或InAlGaN的外延生长的半导体层序列，p掺杂层序列，n掺杂层序列，产生电磁辐射并位于 p掺杂层序列和n掺杂层序列，以及至少一个Al x Ga 1-x N基中间层，其中0≤x≤1，其位于与n掺杂层序列相同的有源区的一侧。

20. 发明申请

US20120319126A1 Optoelectronic Semiconductor Chip and Method for Fabrication Thereof 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US20120319126A1
公开(公告)日：2012-12-20
申请号：US13516676
申请日：2010-12-23
申请人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L33/32 , H01L33/08
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
摘要翻译：光电子半导体芯片具有包括多个微二极管的第一半导体层序列，以及第二半导体层序列，其包含第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料的有源区，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管为有源区形成ESD保护。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式