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11. 发明申请

US20170229291A1 METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY 审中-公开
公开(公告)号：US20170229291A1
公开(公告)日：2017-08-10
申请号：US15581446
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32724 , H01J37/32357 , H01J37/32449 , H01J37/32522 , H01J37/32715 , H01J2237/2001 , H01J2237/334 , H01L21/67069
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

12. 发明申请

US20160260616A1 SILICON SELECTIVE REMOVAL 有权
标题翻译：硅选择性拆除
公开(公告)号：US20160260616A1
公开(公告)日：2016-09-08
申请号：US15056756
申请日：2016-02-29
申请人： APPLIED MATERIALS, INC.
发明人： Zihui Li , Ching-Mei Hsu , Hanshen Zhang , Jingchun Zhang
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32422 , H01J37/32954 , H01J2237/334
摘要： A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。远程等离子体激发含氟前体。远程等离子体内的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氢前体结合。该组合与图案化的异质结构反应以比第二暴露部分更快地除去暴露的硅部分。硅选择性是由位于远程等离子体和基板处理区域之间的离子抑制器的存在引起的。这些方法可用于比硅氧化物，氮化硅和各种含金属的材料选择性地去除硅。这些方法可以用于以受控的方式去除小的蚀刻量，并且可能导致非常光滑的硅表面。

13. 发明授权

US09245762B2 Procedure for etch rate consistency 有权
标题翻译：蚀刻率一致性的程序
公开(公告)号：US09245762B2
公开(公告)日：2016-01-26
申请号：US14275693
申请日：2014-05-12
申请人： Applied Materials, Inc.
发明人： Jingchun Zhang , Hanshen Zhang
IPC分类号： H01L21/302 , H01L21/461 , H01L21/3065 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32862 , H01L21/32137
摘要： Methods of conditioning interior processing chamber walls of an etch chamber are described. A fluorine-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls periodically on a preventative maintenance schedule. The treated walls promote an even etch rate when used to perform gas-phase etching of silicon regions following conditioning. Alternatively, a hydrogen-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls in embodiments. Regions of exposed silicon may then be etched with more reproducible etch rates from wafer-to-wafer. The silicon etch may be performed using plasma effluents formed from a remotely excited fluorine-containing precursor.
摘要翻译：描述了对蚀刻室的内部处理室壁进行调理的方法。可以在等离子体中远程或局部激发含氟前体，以在预防性维护计划上周期性地处理内部室壁。被处理的壁在用于在调节后对硅区进行气相蚀刻时促进均匀的蚀刻速率。或者，在实施方案中，可以在等离子体中远程或局部激发含氢前体以处理内部室壁。然后可以从晶片到晶片以更可重复的蚀刻速率蚀刻暴露的硅的区域。可以使用由远程激发的含氟前体形成的等离子体流出物来进行硅蚀刻。

14. 发明授权

US11637002B2 Methods and systems to enhance process uniformity 有权
公开(公告)号：US11637002B2
公开(公告)日：2023-04-25
申请号：US14554250
申请日：2014-11-26
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/67
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

15. 发明授权

US11328909B2 Chamber conditioning and removal processes 有权
公开(公告)号：US11328909B2
公开(公告)日：2022-05-10
申请号：US15852911
申请日：2017-12-22
申请人： Applied Materials, Inc.
发明人： Hanshen Zhang , Zhenjiang Cui , Nitin Ingle
IPC分类号： H01J37/32 , H01L21/3213 , H01L21/768 , H01L23/532 , H01L23/535
摘要： Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

16. 发明授权

US11239061B2 Methods and systems to enhance process uniformity 有权
公开(公告)号：US11239061B2
公开(公告)日：2022-02-01
申请号：US15581446
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/67
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

17. 发明申请

US20190214229A1 METAL RECESS FOR SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：US20190214229A1
公开(公告)日：2019-07-11
申请号：US15864718
申请日：2018-01-08
申请人： Applied Materials, Inc.
发明人： Zhenjiang Cui , Nitin Ingle , Feiyue Ma , Hanshen Zhang , Siliang Chang , Daniella Holm
IPC分类号： H01J37/32 , H01L27/10 , H01L21/02 , H01L21/285 , H01L27/02
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32788 , H01J37/32972 , H01L21/02274 , H01L21/0262 , H01L21/28518 , H01L27/0203 , H01L27/10
摘要： Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

18. 发明申请

US20190198300A1 CHAMBER CONDITIONING AND REMOVAL PROCESSES 审中-公开
公开(公告)号：US20190198300A1
公开(公告)日：2019-06-27
申请号：US15852911
申请日：2017-12-22
申请人： Applied Materials, Inc.
发明人： Hanshen Zhang , Zhenjiang Cui , Nitin Ingle
IPC分类号： H01J37/32 , H01L21/3213 , H01L21/768 , H01L23/535 , H01L23/532
CPC分类号： H01J37/32862 , H01J37/32357 , H01J37/32449 , H01J2237/3344 , H01J2237/3346 , H01L21/32136 , H01L21/76843 , H01L21/76865 , H01L21/76895 , H01L23/53266 , H01L23/535
摘要： Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

19. 发明申请

US20160148821A1 METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY 审中-公开
标题翻译：提高过程均匀性的方法和系统
公开(公告)号：US20160148821A1
公开(公告)日：2016-05-26
申请号：US14554250
申请日：2014-11-26
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32724 , H01J37/32357 , H01J37/32449 , H01J37/32522 , H01J37/32715 , H01J2237/2001 , H01J2237/334 , H01L21/67069
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
摘要翻译：半导体处理室可以包括远程等离子体区域和与远程等离子体区域流体耦合的处理区域。处理区域可以被配置为将基板容纳在支撑基座上。支撑基座可以包括在基座的内部区域处的第一材料。支撑基座还可以包括与基座的远侧部分或基座的外部区域联接的环形构件。环形构件可以包括不同于第一材料的第二材料。

20. 发明申请

US20160086808A1 PROCEDURE FOR ETCH RATE CONSISTENCY 有权
公开(公告)号：US20160086808A1
公开(公告)日：2016-03-24
申请号：US14957902
申请日：2015-12-03
申请人： Applied Materials, Inc.
发明人： Jingchun Zhang , Hanshen Zhang
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32862 , H01L21/32137
摘要： Methods of conditioning interior processing chamber walls of an etch chamber are described. A fluorine-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls periodically on a preventative maintenance schedule. The treated walls promote an even etch rate when used to perform gas-phase etching of silicon regions following conditioning. Alternatively, a hydrogen-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls in embodiments. Regions of exposed silicon may then be etched with more reproducible etch rates from wafer-to-wafer. The silicon etch may be performed using plasma effluents formed from a remotely excited fluorine-containing precursor.

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